Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508AW
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection
circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 700 V
ICCollector current (DC) - 8 A
ICM Collector current peak value - 15 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W
VCEsat Collector-emitter saturation voltage IC = 4.5 A; IB = 1.6 A - 1.0 V
ICsat Collector saturation current f = 16 kHz 4.5 - A
tfFall time ICsat = 4.5 A; f = 16kHz 0.7 - µs
PINNING - SOT429 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 700 V
ICCollector current (DC) - 8 A
ICM Collector current peak value - 15 A
IBBase current (DC) - 4 A
IBM Base current peak value - 6 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W
Tstg Storage temperature -65 150 ˚C
TjJunction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-mb Junction to mounting base - - 1.0 K/W
Rth j-a Junction to ambient in free air 45 - K/W
23
1
b
c
e
July 1998 1 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508AW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICES Collector cut-off current 1VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 6.0 V; IC = 0 A - - 10 mA
VCEOsus Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltages IC = 4.5 A; IB = 1.6 A - - 1.0 V
VBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 2.0 A - - 1.1 V
hFE DC current gain IC = 100 mA; VCE = 5 V 6 13 30 -
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
fTTransition frequency at f = 5 MHz IC = 0.1 A;VCE = 5 V 7 - MHz
CCCollector capacitance at f = 1MHz VCB = 10 V 125 - pF
Switching times (16 kHz line ICsat = 4.5 A;Lc= 1 mH;Cfb = 4 nF
deflection circuit) IB(end) = 1.4 A; LB = 6 µH; -VBB = -4 V;
tsTurn-off storage time 6.5 - µs
tfTurn-off fall time 0.7 - µs
Fig.1. Test circuit for V
CEOsust
. Fig.2. Oscilloscope display for V
CEOsust
.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
VCE / V min
VCEOsust
IC / mA
100
200
250
0
1 Measured with half sine-wave voltage (curve tracer).
July 1998 2 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508AW
Fig.3. Switching times waveforms.
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit
.
Fig.6. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
Fig.7. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
IC
IB
VCE
ICsat
IBend
64us
26us20us
t
t
t
TRANSISTOR
DIODE
0.1 1 10
1
10
100
IC/A
h
FE
BU508AD
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
BU508AD
0.1 1 10
0
0.2
0.4
0.6
0.8
1
IC / A
VCESAT / V
0.1
0.3
0.5
0.7
0.9
+ 150 v nominal
adjust for ICsat
1mH
BY228
12nF
D.U.T.
LB
IBend
-VBB
01234
0.6
0.8
1
1.2
1.4
IC = 6A
IC = 4.5A
IC = 3A
IB / A
VBESAT / V
BU508AD
July 1998 3 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508AW
Fig.9. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.10. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.11. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
= f (T
hs
)
Fig.12. Forward bias safe operating area. T
mb
< 25˚C
(1) P
tot max
line.
(2) Second-breakdown limit (independent of
temperature).
I
Region of permissible DC operation.
II
Permissible extension for repetitive operation.
BU508AD
0.1 1 10
0.1
1
10
IC = 4.5A
IC = 6A
IC = 3A
VCESAT/V
IB/A
0 20 40 60 80 100 120 140
Ths / C
PD% Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1.0E-07 1.0E-5 1.0E-3 1.0E-1 1.0E+1
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
bu508aw
t / s
Zth K/W
D =
tptp
T
T
P
t
D
July 1998 4 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508AW
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
Fig.13. SOT429; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
5.3
4.0
21
max
15.5
min 1
2.2 max 0.4
2.5
0.9 max
5.3 max
3.5
16 max
5.45
seating
plane
5.45
M
o
max
15.5
max
3.2 max
23
1.1
3.5
1.8
7.3 max
July 1998 5 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU508AW
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998 6 Rev 1.200
