ZXMP6A17DN8
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -60 V ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS -1.0 AV
DS=-60V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=⫾20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -1.0 V ID=-250A, VDS=V
GS
Static Drain-Source On-State
Resistance (1) RDS(on) 0.125
0.190
⍀
⍀
VGS=-10V, ID=-2.3A
VGS=-4.5V, ID=-1.9A
Forward Transconductance (1)(3) gfs 4.7 S VDS=-15V,ID=-2.3A
DYNAMIC (3)
Input Capacitance Ciss 637 pF
VDS=-30 V, VGS=0V,
f=1MHz
Output Capacitance Coss 70 pF
Reverse Transfer Capacitance Crss 53 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 2.6 ns
VDD =-30V, ID=-1A
RG≅6.0Ω,V
GS=-10V
Rise Time tr3.4 ns
Turn-Off Delay Time td(off) 26.2 ns
Fall Time tf11.3 ns
Gate Charge Qg9.8 nC VDS=-30V,VGS=-5V,
ID=-2.2A
Total Gate Charge Qg17.7 nC
VDS=-30V,VGS=-10V,
ID=-2.2A
Gate-Source Charge Qgs 1.6 nC
Gate-Drain Charge Qgd 4.4 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.85 -0.95 V TJ=25°C, IS=-2A,
VGS=0V
Reverse Recovery Time (3) trr 25.1 ns TJ=25°C, IF=-1.7A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 27.2 nC
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.