Product Bulletin OPB740W June 1996 (S),OPTEK Reflective Object Sensors Types OPB740W, OPB741W, OPB742W, OPB743W, OPB744W -135(3. 43) .115(2.92) -160(4.06) #28 AWG 4 | - 140(3.56) -062(1.59) R NOM -210(5.33) REFLECTIVE -190(4.83) SURFACE O -710(18.03) | KA -385(9. 78) -690( 17.53) a -365(9.27) OF} iL) ps OPB740W OPB741W OPB742W I | 4.00(101.6) -610(15.49) | i t .150(3.81) OP5743W OP8744wW MIN .590( 14.89) Na WIRE COLOR | FUNCTION ORANGE ANODE GREEN CATHODE HIT ILLECTOR DIMENSIONS ARE IN INCHES(MILLIMETERS) WHITE col a BLUE EMITTER Features e Focused for maximum sensitivity e Phototransistor output e Low cost plastic housing e 4.0" min 26 AWG wire leads Description The OPB740W through OPB744W reflective object sensors each consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on converging optical axes in a black plastic housing. Various options include choice of no windows, blue polysulfone windows for dust protection or opaque windows with offset openings for improved resolution. Available with PC board mounting as OPB740/OPB744 series. The photosensor responds to radiation from the emitter only when a reflective object passes within its field of view. Absolute Maximum Ratings (Ta = 25 C unless otherwise noted) Storage and Operating Temperature Range................... -40 C to +80 C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering C0) 240 oc) Input Diode Continuous Forward Current .......0..0 0.0: c cece cece cece eueeeeens 40 mA Reverse Voltage... 0... ccc cece eee ete cee eeteaennnneees 2.0V Power Dissipation. .......... 0.0... c cece cece esse een eecnneeaas 100 mw) Output Photosensor Collector-Emitter Voltage... 0... cece eee c cece eevee eeveneuaes 30 V Emitter-Collector Voltage... 0... ccc eee e cece nee eueenuanes 5.0V Power Dissipation. ... 0.0.0... 00.0. c cece cece ee ccc tence eee aeees 100 mw?) Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. (2) Derate Linearly 1.82 mW/ C above 25 C. (3) dis distance from the assembly face to the reflective surface. (4) Reflective surface is Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog #1257795. (5) Lower curve is based on calculated worst case condition rather than the conventional -20 limit. (6) Crosstalk is the photocurrent measured with current to the input diode & no reflecting surface. (7) All parameters tested using pulse technique. DESCRIPTION OPB740W No windows OPB741W Blue windows OPB742W Offset windows OPB743W _ No windows OPB744 W __ Blue windows Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 11-36 Types OPB740W, OPB741W, OPB742W, OPB743W, OPB744W Electrical Characteristics (Ta = 25 C unless otherwise noted) SYMBOL | PARAMETER | MIN | MAX | UNITS | TEST CONDITIONS rae QO 7 Input Diode re VE Forward Voltage 1.70 V|ip=40mA ti oO Ip Reverse Current 100 | pA |VR=2.0V Output Phototransistor VipRyceo |Collector-Emitter Breakdown Voltage 30 Vv lc = 100 pA Verjeco |Emitter-Collector Breakdown Voltage 5.0 V Iie =100 pA IcEO Collector Dark Current 100 nA |Vce=10V, Ir =0, Ee=0 Combined Iccon)_|On-State Collector Current OPB740W/OPB741W | 50 yA |Vce=5 V, IF = 40 mA, d = 0.15" OPB742W 10 UA Voce = 5 V, lp = 40 mA, d = 0.15 OPB743W/OPB744W | 200 WA Vce = 5 V, Iz = 40 mA, d = 0.15 Icx) | Crosstalk , OPB740W/OPB741W 10 wA |Vce=5V, IF =40 mA OPB742W 100 nA |Vce=5V,lF=40 mA OPB743W/OPB744W 20 LA Voce =5V, lp = 40 mA Typical Performance Curves Collector Current vs. Normalized Collector Current Normalized Collector Current Diode Forward Current vs. Ambient Temperature vs. Object Distance 1000 1.6 1.6 Ip =40 mA 14 14 Vee r5V See Note 4 100 eeose +20 5 5 a # # ! ec c 5 3 3 = a = S WwW S 10 x 5 & 5 --- -20 = 10 = 08 3 08 S o oO oe See Note 5 e o wo eo 0.6 o 0.6 a uw [vy z y N o 10 z 04 Ip =40 mA 2 oa & Vee =5V = Vee =5V = = d = 0.15 in. (3.81 mm) o d= 0.15 in (3.81 mm) S 2 02 - 2 02 See Note 4 04 0 0 0 10 20 30 40 50 -60 -40 --20 0 20 40 60 80 100 0 0.1 0.2 0.3 0.4 05 1p - DIODE FORWARD CURRENT - mA Ta - AMBIENT TEMPERATURE C d DISTANCE TO REFLECTIVE SURFACE Inches Rise and Fall Time vs. Test Condition Load Resistance 1000 17 mmm TTT TT Te REFLECTING SURFACE See Note 4 ip 40mA foo CLZZZZIZZZELZZIZN_. 4 F Versv vo H 1 ms 4 je = 100 = 5 = f a e ? 3 = o 2 f A 1 < a z 10 = ' _ = = __- tf oF f ---% J 10 LL eit LE Et meat a : Ay (kK) (BE) (Cc) vo0 ik 10K took LEO PHOTOTRANSISTOR Ry LOAD RESISTANCE - 22 Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 11-37