Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High-Current Driver Applications
Ordering number:ENN784E
2SD1145
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005TN (PC)/21599TH (KT)/2090MO/5257KI/3095KI, 6212KI, ki No.784–1/3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2006B
[2SD1145]
Applications
· Relay drivers, hammer drivers, lamp drivers, strobe
DC-DC converters, motor drivers.
Features
· Low saturation voltage.
· Large current capacity and wide ASO.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Emitter
2 : Collector
3 : Base
SANYO :MP
0.5
0.6
0.5
5.0
6.0
6.0 3.0 8.5
14.0
4.7
1.45
1.45
123
0.5
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 06V
egatloVrettimE-ot-rotcelloCV
OEC 02V
egatloVesaB-ot-rettimEV
OBE 6V
tnerruCrotcelloCI
C5A
)esluP(tnerruCrotcelloCI
PC eslupelgnis,sm001 8A
noitapissiDrotcelloCP
C9.0W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V05= E0=0.1Aµ
tnerruCffotuCrettimEI
OBE VBE I,V5= C0=0.1Aµ
niaGtnerruCCD hEF 1V
EC I,V2= CA5.0= *001*065
hEF 2V
EC I,V2= C)esluP(A3= 57
tcudorPhtdiwdnaB-niaGf
TVEC I,V01= CAm05= 021zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01= 54Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,A3= B)esluP(Am06= 5.0V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,A3= B)esluP(Am06= 5.1V
* : The 2SD1145 is classified by 0.5A hFE as follows :
knaREFG
hEF 002ot001023ot061065ot082
2SD1145
No.784–2/3
5
3
2
1
4
0012 543
IC -- VCE
IB=0
ITR09962
5mA
10mA
15mA
40mA
30mA
20mA
5
3
2
1
4
00 0.2 0.4 1.00.80.6
IC -- VCE
IB=0
ITR09963
10mA
15mA
20mA
30mA
40mA
50mA
60mA
5mA
0 0.4 0.8 1.2 1.6 2.0
5
4
3
2
1
0
IC -- VBE
ITR09964
VCE=2V
(Pulse)
hFE -- IC
2
3
5
10
7
1000
2
3
5
7
100
23 550.01 23 5 5
0.1 23
1.0 10
ITR09965
VCE=2V
(Pulse)
Ta=75°C
--25°C
25°C
Ta=75°C
--25°C
25°C
fT -- IC
ITR09966
Cob -- VCB
1.0 10
7
3
5
100
10
2
2
2735 100
2735
ITR09967
f=1MHz
2
2
5
7
3
5
7
3
1000
100
10 23 5723 57 7
0.1
57
0.01 23 5
1.0 10
ITR09968
VCE(sat) -- ICIC / IB=50
(Pulse)
2
3
5
10
7
1000
2
3
5
7
100
23 57 7
10 23 5
100 1000
VCE=10V
(Pulse)
Ta=75°C
--25°C
25°C
2
2
5
7
3
5
7
3
10
1.0
0.1 23 5723 57 7
0.1
57
0.01 23 5
1.0 10
ITR09969
VBE(sat) -- ICIC / IB=50
(Pulse)
Ta=75°C
--25°C
25°C
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
DC Current Gain, hFE
Collector Current, IC–A
Gain-Bandwidth Product, fT–MHz
Collector Current, IC–mA Collector-to-Base Voltage, VCB –V
Output Capacitance, Cob –pF
Collector Current, IC–A
Collector-to-Emitter
Saturation Voltage, VCE(sat) –mV
Collector Current, IC–A
Base-to-Emitter
Saturation Voltage, VBE(sat) –V
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2005. Specifications and information herein are subject to
change without notice.
2SD1145
PS No.784–3/3
0
1000
800
600
400
200
0 40 120 1608020 100 14060
PC -- Ta
ITR09971
A S O
1.0
0.1
5
7
7
10
5
3
3
2
2
2
5
7
3
0.1 1.0
257310
257323
ITR09970
IC=5A
Ta=25°C
ICP=8A
DC operation
100ms (pulse)
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Dissipation, P
C
–mW
Ambient Temperature, Ta –˚C
