G E SOLID STATE 3875081 GE SOLID STATE Signal Transistors O1 pe J 3a7s0a1 OoOLedeh O i O1E 17924 BD Te 3705 2N3903, 2N3904, 2N3905, 2N3906 Silicon Transistors TO-92 The GE/RCA 2N3903, 2N3904 NPN types and 2N3905, 2N3906 PNP types are planar epitaxial silicon transistors de- t signed for general purpose switching and ampiifier applica- MAXIMUM RATINGS, Absolute-Maximum Values: T-3S-// tions, PNP values are negative: observe proper polarity. These types are supplied in JEDEC TO-92 package. 2N3903 -2N3905 2Nng904 2N3906 COLLECTOR TO EMITTER VOLTAGE (Vopg) 0.6.0.0 c ee ec eceeccceeeeeeeesuetveveueesveteucteteenenss 40 ~40 V COLLECTOR TO BASE VOLTAGE (Vogg) 0. see eee ee nent ects nee seeneseeteeasseetetuertaterscietinnene, 60 -60 V EMITTER TO BASE VOLTAGE (Vega) . 0. 0c 0. eee ee eect cent eaten nents tree e tee br etn e tt tte tnenen rene 6 -5 V CONTINUOUS COLLECTOR CURRENT (Ic) 200 mA TOTAL POWER DISSIPATION Ta < 25C (Py) 350 mW 2.8 mw/rec DERATE FACTOR, Ta > 26C............... OPERATING TEMPERATURE (T,).. -55t0+135 C STORAGE TEMPERATURE (Tgtq) 0.06... sees eset ceees ee en tee ee bene e tent ne bette tne nnn -55t0 +125 C 28 +230 C File Number 2056 G E SOLID STATE o1 DE J 3a750a1 OOLPIes h i : 3875081 GE SOLID STATE D1E 17925 D Signal Transistors 2N3903, 2N3904, 2N3905, 2N3906 T3715 ELECTRICAL CHARACTERISTICS, At Ambient Temperature (T,) = 25C Unless Otherwise Specified " -7> 3 SS - J} LIMITS CHARACTERISTICS SYMBOL 2N3903 2N3905 UNITS 2N3904 2N3906 MIN. MAX. MIN. MAX Collector-Emitter Breakdown Voltage (lg = 1A, Ip = 0) VipRIecO 40 - -40 - Collector-Base Breakdown Voltage Vv (ig = 10pA, Ie = 0) Vipricao 60 = -40 - Emitter-Base Breakdown Voltage (Ip = 10uA, ic = 0) VipREBO 6 - -5 - Collector Cutoff Curernt Voce = 30V, Vaciorm = 8V) loev - 50 - -50 nA Base Cutoff Current (Voge = 30V, Vee; OFF) V2 3) IBev - 50 - -50 Collector-Emitter Saturation Voltage VcE(saT) (Ig. = 10MA, Ig = tmA)* = 0.2 = - 0.25 (ig = 50mA, Ig = 5mA)* - 0.3 - -0.4 Base Emitter Saturation Voltage VeESAT) v (ig = 10MA, Ig = tmA)* 0.65 0.85 0.65 - 0.85 (ig = 50mA, Ip = 5mA)* - 0.95 - -0.95 - = 2N3903 2N3904 2N3805 2N3906 _ - - MIN. |MAX.| MIN. |MAX.| MIN, |MAX.| MIN, |MAX, - DC Forward Current Transfer Ratio (Woe = IVIg = 100 pA) 20 | | 40} | 30 | | eo] ~ ce = 1VIg = 1mA) 35 | | 70 | - | 40 | - | 80 | - - Woe = 1VIo = 10 mA)* hee 50 | 150 | 100 | 300 | 50 | 150 | 100 | 300 - (Woe = 1V Io = 50 mA)* so |] | 6 | - | 30] | 6c] - (cE = 1V Ig = 100 mA)* 18 {j | 30 | | 16] | 30] - Collector-Base Capacitance (Vop = 5V le = 0,f = MHz) Cop - 4 - 4 - $45] | 45 Emitter-Base Capacitance pF (Veg = 5V, Ie = 0, f = 1MHz) Cop - 8 - 8 - 8 - 10 Gain Bandwidth Product (og = 20V, IE = 10mA, f = 100MHz) tr 250} | 300] | 200] | 250] MHz *Pulse conditions: << 300 ys pulse width, << 2% duty cycle. Ta = 125C, Vee =1 21V 10 ' 1 100 . COLLECTOR CURRENT (Ic)-mA COLLECTOR CURRENT (Ic}-mA 92C$-42781 92Cs- 42770 Fig. 1 Typical dc forward current transfer ratio characteristics for Fig. 2 Typical de forward current transfer ratio characteristics for 2N3904, 29 G E SOLID STATE ron mee 3875081 GE SOLID STATE Signal Transistors 01 defss7soar corva2e 3 D1E 17926 D 2N3903, 2N3904, 2N3905, 2N3906 > 1 = s i a 2 cf uw E a aw e 8 a 1 10 COLLECTOR CURRENT (Ig)- mA 920$-42783 Fig. 3 Typical base-to-emitter saturation voitaga characteristics for 2N3903 and 2N3904, > < 3 wu o 2 Ty < 5 > 0 COLLECTOR CUARENT {ic} - mA 9208-42773 Fig. Typical colfector-to-emitter saturation voltage characteristics for 2N3903. AMBIENT RATIO (hee) O01 1 10 10K COLLECTOR CURRENT (Ic)- mA o2cs42775 Fig. 7 Typical de torward-current transfer rato characteristics for 2N3905. 30 Tm 37S FTF BS)/)- @ASE CURRENT (Ip) mA 9208-42772 Fig. 4 Typical collector-to-emitter saturation voltage characteristics for 2N3903 and 2N3904, 1 10 100 COLLECTOR CURRENT (ig) - mA B2C8-42774 Fig. 6 Typical collector-to-emitter saturation voltage characteristics for 2N3904. 04 -4 =10 =100 - COLLECTOR CURRENT (Ic) - mA e2Ck-42778 Fig. 8 Typical de forward-current transfer ratio characteristics for 2N3906.