FDS8817NZ N-Channel PowerTrench(R) MOSFET 30V, 15A, 7.0m Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench(R) process that has been especially tailored to minimize the on-state resistance. Max rDS(on) = 7m at VGS = 10V, ID = 15A Max rDS(on) = 10m at VGS = 4.5V, ID =12.6A HBM ESD protection level of 3.8KV typical (note 3) This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant D D D D G SO-8 S D G D S D S D S S Pin 1 S MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous Ratings 30 Units V 20 V (Note 1a) 15 -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG A 60 (Note 4) 181 Power Dissipation (Note 1a) 2.5 Power Dissipation (Note 1b) 1.0 Operating and Storage Junction Temperature Range -55 to +150 mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient (Note 1a) (Note 1) 25 50 RJA Thermal Resistance, Junction to Ambient (Note 1b) 125 C/W Package Marking and Ordering Information Device Marking FDS8817NZ (c)2008 Fairchild Semiconductor Corporation FDS8817NZ Rev.C1 Device FDS8817NZ Reel Size 13" 1 http://store.iiic.cc/ Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench(R) MOSFET November 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V BVDSS TJ Breakdown Voltage Temperature Coefficient 30 V ID = 250A, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 1 A IGSS Gate to Source Leakage Current VGS = 20V, VDS = 0V 10 A 3 V mV/C 20 On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250A, referenced to 25C -6 VGS = 10V, ID = 15A 5.4 7 rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 12.6A 7.0 10 7.5 11 VGS = 10V, ID = 15A gFS Forward Transconductance 1 TJ = 125C VDS = 5V, ID = 15A 1.8 mV/C 54 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz 1805 2400 pF 335 445 pF 200 300 pF f = 1MHz 1.4 11 22 ns VDD = 15V, ID = 15A VGS = 10V, RGEN = 6 13 26 ns 25 40 ns 7 14 ns 32 45 nC 17 24 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to 10V Qg Total Gate Charge VGS = 0V to 5V Qgs Gate to Source Charge 6 nC Qgd Gate to Drain "Miller" Charge 7 nC VDD = 15V ID = 15A Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.1A (Note 2) IF = 15A, di/dt = 100A/s 0.8 1.2 V 24 36 ns 15 23 nC Notes: 1. RJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 50C/W when mounted on a 1in2 pad of 2 oz copper. b) 125C/W when mounted on a minimum pad . 2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%. 3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied. 4. Starting TJ = 25C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V. FDS8817NZ Rev.C1 2 http://store.iiic.cc/ www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted ID, DRAIN CURRENT (A) VGS = 10.0V VGS = 4.5V 45 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 4.0V VGS = 3.5V 30 15 VGS = 3.0V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 3.5 VGS = 3.0V 4 VGS = 3.5V 3 VGS = 4.0V 2 VGS = 4.5V 1 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 45 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 26 1.8 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics ID = 15A VGS = 10V 1.6 1.4 1.2 1.0 0.8 ID =7.5A 22 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 18 14 TJ = 125oC 10 6 TJ = 25oC 2 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 3 150 Figure 3. Normalized On- Resistance vs Junction Temperature 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 60 ID, DRAIN CURRENT (A) VGS = 10.0V 0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 50 VDD = 5V 40 30 20 TJ = 150oC TJ = 25oC 10 TJ = -55oC 0 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 VGS = 0V 10 1 TJ = 25oC 0.1 TJ = -55oC 0.01 0.001 0.0 Figure 5. Transfer Characteristics FDS8817NZ Rev.C1 TJ = 150oC 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 http://store.iiic.cc/ www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 3000 ID = 15A 8 Ciss VDD = 10V 6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V VDD =20V 4 2 1000 Coss Crss f = 1MHz VGS = 0V 0 0 5 10 15 20 25 Qg, GATE CHARGE(nC) 30 100 0.1 35 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 1E-3 Ig, GATE LEAKAGE CURRENT(A) IAS, AVALANCHE CURRENT(A) 20 10 TJ = 25oC TJ = 125oC 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 400 VGS = 0V 1E-4 TJ = 150oC 1E-5 1E-6 1E-7 TJ = 25oC 1E-8 1E-9 0 5 10 15 20 25 30 VGS, GATE TO SOURCE VOLTAGE(V) Figure 9. Unclamped Inductive Switching Capability Figure 10. Gate Leakage Current vs Gate to Source Voltage 100 15 rDS(on) LIMITED ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 12 VGS = 10V 9 VGS = 4.5V 6 3 100us 10 1s 10ms 1 100ms SINGLE PULSE TJ = MAX RATED RJA = 125oC/W TA = 25oC 0.1 1s 10s DC o RJA = 50 C/W 0.01 0.01 0 25 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ( C) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature FDS8817NZ Rev.C1 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Forward Bias Safe Operating Area 4 http://store.iiic.cc/ www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2000 1000 FOR TEMPERATURES NORMALIZED THERMAL IMPEDANCE, ZJA VGS = 10V ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 I = I25 150 - T A -----------------------125 TA = 25oC 10 SINGLE PULSE 1 o RJA = 125 C/W 0.2 -4 10 -3 -2 10 10 -1 10 1 2 10 3 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Single Pulse Maximum Power Dissipation NORMALIZED THERMAL IMPEDANCE, ZJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE o RJA = 125 C/W 0.001 0.0002 -4 10 -3 10 -2 10 -1 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve FDS8817NZ Rev.C1 5 http://store.iiic.cc/ www.fairchildsemi.com FDS8817NZ N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TM TinyPowerTM Saving our world, 1mW /W /kW at a timeTM TinyPWMTM SmartMaxTM TinyWireTM SMART STARTTM SerDesTM SPM(R) STEALTHTM SuperFETTM UHC(R) SuperSOTTM-3 Ultra FRFETTM SuperSOTTM-6 UniFETTM SuperSOTTM-8 VCXTM SupreMOSTM VisualMaxTM SyncFETTM XSTM (R) The Power Franchise(R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 http://store.iiic.cc/ FDS8817NZ N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.