November 2008
FDS8817NZ N-Channel PowerTrench® MOSFET
©2008 Fairchild Semiconductor Corporation
FDS8817NZ Rev.C1 www.fairchildsemi.com
1
FDS8817NZ
N-Channel PowerTrench® MOSFET
30V, 15A, 7.0mΩ
Features
Max rDS(on) = 7mΩ at VGS = 10V, ID = 15A
Max rDS(on) = 10mΩ at VGS = 4.5V, ID =12.6A
HBM ESD protection level of 3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
RoHS compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
IDDrain Current -Continuous (Note 1a) 15 A
-Pulsed 60
EAS Single Pulse Avalanche Energy (Note 4) 181 mJ
PDPower Dissipation (Note 1a) 2.5 W
Power Dissipation (Note 1b) 1.0
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case (Note 1) 25 °C/WRθJA Thermal Resistance, Junction to Ambient (Note 1a) 50
RθJA Thermal Resistance, Junction to Ambient (Note 1b) 125
Device Marking Device Reel Size Tape Width Quantity
FDS8817NZ FDS8817NZ 13” 12mm 2500 units
Pin 1
SO-8
D
D
D
D
S
SS
GD
D
D
D
G
S
S
S
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Notes:
1. RθJA i s the sum of the ju ncti o n-to- ca se a nd case-to- ambient t her m al r esi stance where the case thermal reference is defi n ed as the solder mounting surface of the drain
pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%.
3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V.
Electrical Characteristics TJ = 25°C unless otherwise noted
Off Characteristic s
On Characteristics (Note 2)
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 30 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250μA, referenced to 25°C 20 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 1μA
IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±10 μA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 1 1.8 3 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250μA, referenced to 25°C –6 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 15A 5.4 7mΩVGS = 4.5V, ID = 12.6A 7.0 10
VGS = 10V, ID = 15A TJ = 125°C 7.5 11
gFS Forward Transconductance VDS = 5V, ID = 15A 54 S
Ciss Input Capacitance VDS = 15V, VGS = 0V,
f = 1MHz
1805 2400 pF
Coss Output Capacitance 335 445 pF
Crss Reverse Transfer Capacitance 200 300 pF
RgGate Resistance f = 1MHz 1.4 Ω
td(on) Turn-On Delay Time VDD = 15V, ID = 15A
VGS = 10V, RGEN = 6Ω
11 22 ns
trRise Ti me 13 26 ns
td(off) Turn-Off Delay Time 25 40 ns
tfFall Time 7 14 ns
QgTotal Gate Charge VGS = 0V to 10V VDD = 15V
ID = 15A 32 45 nC
QgTotal Gate Charge VGS = 0V to 5V 17 24 nC
Qgs Gate to Source Charge 6 nC
Qgd Gate to Drain “Miller” Charge 7 nC
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.1A (Note 2) 0.8 1.2 V
trr Reverse Recovery Time IF = 15A, di/dt = 100A/μs 24 36 ns
Qrr Reverse Recovery Charge 15 23 nC
a) 50°C/W when mounted on a
1in2 pad of 2 oz copper. b) 125°C/W when mounted on a
minimum pad .
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Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On- Resistance
vs Junction Te m perature Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
15
30
45
60 VGS = 10.0V
VGS = 4.0V
VGS = 3.0V
VGS = 3.5V
VGS = 4.5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
ID, DRAIN CURRE NT (A)
VDS, DRA IN TO SOURCE VOLTAGE (V)
0 15304560
0
1
2
3
4
5
VGS = 1 0.0V
VGS = 3.0V
VGS = 4.5V
VGS = 3.5V
VGS = 4.0V
PULSE D U R ATION = 80μs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT(A)
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = 15A
VGS = 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERA TURE (oC)
345678910
2
6
10
14
18
22
26
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
TJ = 25oC
ID =7.5A
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
VGS, GATE TO SOURCE VOLTAGE (V)
1.5 2.0 2.5 3.0 3.5 4.0
0
10
20
30
40
50
60
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
TJ = -55oC
TJ = 25oC
TJ = 150oC
ID, DRAI N CU RR E NT (A)
VGS, GA TE TO SOURCE VOLTAGE (V)
VDD = 5V
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55oC
TJ = 25oC
TJ = 150oC
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTA G E (V)
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Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain
to Source Voltage
Figure 9. Uncl ampe d Indu c tiv e
Switching Capability Figure 10 . Gate Leakage Current vs Gate to
Source Voltage
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperatu re Figure 12. Forward Bias Safe
Operating Area
Typical Characteristics TJ = 25°C unless otherwise noted
0 5 10 15 20 25 30 35
0
2
4
6
8
10
VDD = 15V
VDD =20V
VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = 10V
ID = 15A
0.1 1 10
100
1000
f = 1MH z
VGS = 0V
CAPACITANCE (pF)
VDS, DRA IN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
3000
30
0.01 0.1 1 10 100
1
10
TJ = 25oC
TJ = 125oC
tAV, TIME IN A V ALANCHE (ms)
IAS, AVALANCHE CURRENT(A)
20
400
0 5 10 15 20 25 30
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
VGS = 0V
TJ = 25oC
TJ = 150oC
VGS, GA TE TO SOURCE VOLTAGE(V)
Ig, GATE LEAK AGE CURRENT(A)
25 50 75 100 125 150
0
3
6
9
12
15
RθJA = 50oC/W
VGS = 4.5V
VGS = 10V
ID, DRAI N CURRE N T (A )
TA, A MBIENT TEMPERATURE (oC)
0.01 0.1 1 10 100
0.01
0.1
1
10
100
100us
1s
1s
DC
10s
100ms
10ms
rDS(on) LIMITED
SINGLE PULSE
TJ = MAX R A T ED
RθJA = 125oC/W
TA = 25oC
ID, DRAIN CURRENT (A)
VDS, D RAIN to SOURCE V OLTAGE (V )
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Figure 13. Single Pulse Maximum Power Dissipation
Figure 14. Transient Thermal Response Curve
Typical Characteristics TJ = 25°C unless otherwise noted
10-4 10-3 10-2 10-1 11010
2103
0.2
1
10
100
1000
2000
RθJA = 125oC/W
VGS = 10V
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150 TA
–
125
------------------------
10-4 10-3 10-2 10-1 11010
2103
0.0002
0.001
0.01
0.1
1
2DUTY C YCL E-D ESCENDING ORDER
NORMAL IZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURA TION (s)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
SINGLE PULSE
RθJA = 125oC/W
PDM
t1
t2
NOES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + T A
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FDS8817NZ N-Channel PowerTrench® MOSFET
Rev. I37
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