50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DFA200AA80/160
THREE PHASE DIODETHYRISTOR
SanRex Power Module, DFA200AA, is complex isolated
module which is designed for rash current circuit.
It contains six diodes connected in a three phase bridge
configuration, and a thyristor connected to a direct current line.
This Module is designed very compactly. Because
diode module and thyristor put together.
This Module is also isolated type between electorode
terminal and mounting base. So you can put this
Module and other one together in a same fin.
Application
Inverter for AC or DC motor control, Current stabilized
power supply, Switching power supply.
Mximum Ratings (Tj=25℃ unlessotherwisespecified)
DIODE
Symbol Item Ratings
DFA200AA80
800
960
DFA200AA160
1600
1700
Unit
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
V
V
Symbol Item
Output Current (D.C.)
Conditions Ratings Unit
AID
Three phase full wave, Tc96
200
IFSM Surge forward current cycle, 50/60HZ, peak value, non-repetitive 1850/2000 kA
Tj
Operating Junction Temperature
30 to 150
Tstg Storage Temperature 30 to 135
108
13 5 15 5
23
24 5
18
7
4
62
20
8
RRSSTT
G
R2 + −
+ −
R2
22
28 22 22 21
28 5
22
12
93 ± 3
48 0±0.3
27 ± 3
4-φ5.8
6- M6
depth
mm
 
M4
depth
mm
 
Unit:㎜
Electrical Characteristics
Symbol
IRRM
Item
Repetitive Peak Reverse Current,max.
Conditions
Tj150, VR=VRRM
Ratings
20
1.35
0.10
Unit
mA
VFM Forward Voltage Drop,max. IF200A Inst. measurement V
Rthj-cThermal Impedance, max. Junction to CaseTOTAL/W
〜
〜
〜
+
−
G
R2
V
ISO
Isolation Breakdown Voltage (R.M.S.)
Mounting
Torque
A.C. 1minute 2500 V
Mounting
M5
Terminal
M6
Mass
Recommended Value 1.5-2.515-25
Recommended Value 2.5-3.925-40
2.728
4.748
Terminal
M4Recommended Value 1.0-1.410-141.515
Nm
(㎏fB
gTypical Value 460
UL;E76102M
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SanRex
®
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DFA200AA80/160
Maximum Ratings (Tj=25℃ unlessotherwisespecified)
THYRISTOR
Symbol Item Ratings
DFA200AA80
800
960
DFA200AA160
1600
1700
Unit
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
V
V
800 1600VDRM
Repetitive Peak Off-State Voltage
V
Symbol Item Conditions Ratings
200
Unit
ITAVAverage On-State Current
Singl phase half wave. 180°conduction, Tc93
ITSM Surge On-State Current
I2t I2t (for fusing)
12cycle, 50/60HZ, peak value, non-repetitive
Value for one of surge current
A
1850/2000 A
17000 A2S
didt
Critical Rate of Rise of On-State Current
IG100mAVD12VDRMdiG/dt0.1A/μs
Tj
Operating Junction Temperature
Tstg Storage Temperature
Mounting
Torque
Mounting
M5
Terminal
M6
Mass
Tj125℃〜135
Recommended Value 1.5-2.515-25
Recommended Value 2.5-3.915-25
Typical Value
200 A/μs
30 to 135
VISO
Isolation Breakdown Voltage (R.M.S.)
A.C. 1minute 2500 V
30 to 135
2.728
4.748
Terminal
M4Recommended Value 1.0-1.415-251.515
460
Nm
(㎏fB
g
Symbol Item Conditions Ratings
50
Unit
IDRM
Repetitive Peak off-State Current,max.
IRRM
Repetitive Peak Reverse Current,max.
Tj135℃,VDVDRM
Tj135℃,VDVDRM
VTM Peak on-State Voltagea,max.
IGT Gate Trigger Current,max.
dvdt
Critical Rate of off-State Voltaget,min.
IT200A Inst. measurement
VD6VIT1A
mA
50 mA
1.15 V
100 mA
VGT Gate Trigger Voltage,max. VD6VIT1A 3 V
Tj125℃,VD23VDRM
Rthj-cThermal Impedance, max. Junction to Case 500 V/μs
0.18 /W
Electrical Characteristics
DIODEMaximumForwardCharacteristics
ForwardVoltageDropVF(V)
0.6 0.8 1.0 1.2 1.4 1.6 8 2.0
102
101
2
100
2
5
2
5
5
ForwardCurrentIF(A)
Tj=
Tj=
OutputCurrentID(A)
200
300
400
500
600
700
800
100
0
0 50 100 150 200 250
OutputCurrentvs.PowerDissipation
PowerDissipationPav(W)
SCR
DIODE
(ThreePhase)
DIODE
(SinglePhase)
SCR+DIODE
(SinglePhase) SCR+DIODE
(ThreePhase)
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SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DFA200AA80/160
OutputCurrentID(A)
200
100
50
150
0
0 50 100 150 200 250
OutputCurrentvs.
AllowablecaseTemperature
AllowableCaseTemperatureTc
ThreePhase
Diode
SCR
500
1000
2000
2500
1500
0
100 2 5 2 5 2
101
Time(Cycles)
DIODESurgeForwardCurrentRating
(Non-Repetitive)
60 H Z
Peroneelement
Tj=25start
0.15
0.1
0.05
0 101
55
2 5 2 52100
Timet(sec)
DIODETransientThermalImpedance
TransientThermalImpedanceθj-c/W
JunctiontoCase
GateCharacteristics
GateCurrent(mA)
10 0
2
5
2
5
101
2
103
102
2101 2 5 2 55
GateVoltage(V)
PeakForwardGateVoltage(10V)
MaximumGateNon-TriggerVoltage
PeakGateCurrentA)
135
25
10
AverageGatePowerW)
PeakGatePower
(10W
SCROn-StateCharacteristics
On-StateVoltage(V)
0.5 1.0 2.0 3.0
103
102
2
101
2
5
2
5
5
On-StatePeakCurrentIT(A)
Tj=
Tj=
500
1000
2000
2500
1500
0
100 2 5 2 5 2
101
Time(Cycles)
SurgeOn-StateCurrentRating
(Non-Repetitive)
SurgeForwardCurrentIFSM(A)
Peroneelement
Tj=25start
60 H Z
0.2
0.1
0 101
510
2 5
2 5
2 5 2100
Timet(sec)
SCRTransientThermalImpedance
TransientThermalImpedanceθj-c/W
JunctiontoCase
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