Semiconductor Group 1
Silicon Schottky Diodes BAT 14- … R
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type Ordering CodeMarking Package1)
Pin Configuration
BAT 14-020 R Q62702-D1260–R
BAT 14-050 R Q62702-D1269
BAT 14-090 R Q62702-D1277
BAT 14-110 R Q62702-D1286
Parameter Symbol Unit
Junction temperature Tj175 ˚C
Tstg – 65 … + 150
Forward current IF100 mA
Storage temperature range
Operating temperature range Top – 65 … + 150
Values
50
BAT 14-020 R
BAT 14-050 R BAT 14-090 R
BAT 14-110 R
1) For detailed information see chapter Package Outlines.
●Beam lead technology
●Low dimension
●High performance
●Medium barrier
BAT 14- … R
BAT 14- ...R
Semiconductor Group 2
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
UnitValues
Parameter Symbol
min. typ. max.
pFDiode capacitance
VR = 0, f = 1 MHz BAT 14-020 R
BAT 14-050 R
BAT 14-090 R
BAT 14-110 R
CT–
–
–
–
0.30
0.20
0.14
0.10
0.35
0.25
0.15
0.12 VForward voltage
IF = 1 mA BAT 14-020 R
BAT 14-050 R
BAT 14-090 R
BAT 14-110 R
IF = 10 mA BAT 14-020 R
BAT 14-050 R
BAT 14-090 R
BAT 14-110 R
VF–
–
–
–
–
–
–
–
0.45
0.47
0.49
0.50
0.55
0.57
0.60
0.65
–
–
–
–
–
–
–
–dBSingle sideband noise figure
FIF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz
f = 3.0 GHz BAT 14-020 R
f = 6.0 GHz BAT 14-050 R
f = 9.3 GHz BAT 14-090 R
f = 16 GHz BAT 14-110 R
FSSB
–
–
–
–
6.0
6.5
6.5
7.0
–
–
–
–ΩDifferential forward resistance
IF = 10 mA BAT 14-020 R
BAT 14-050 R
IF = 50 mA BAT 14-090 R
BAT 14-110 R
rf–
–
–
–
3.5
4.0
7.0
10.0
–
–
–
–
DC Characteristics
