Silicon Schottky Diodes Beam lead technology Low dimension High performance Medium barrier BAT 14- ... R ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 14-020 R - Q62702-D1260 BAT 14-050 R Q62702-D1269 BAT 14-090 R Q62702-D1277 BAT 14-110 R Q62702-D1286 Pin Configuration Package1) R Maximum Ratings Parameter Symbol Values BAT 14-020 R BAT 14-050 R BAT 14-090 R BAT 14-110 R 50 Forward current IF 100 Junction temperature Tj 175 Storage temperature range Tstg - 65 ... + 150 Operating temperature range Top - 65 ... + 150 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 Unit mA C BAT1414-... ...R BAT R Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. - - - - 0.30 0.20 0.14 0.10 0.35 0.25 0.15 0.12 - - - - - - - - 0.45 0.47 0.49 0.50 0.55 0.57 0.60 0.65 - - - - - - - - DC Characteristics Diode capacitance VR = 0, f = 1 MHz Forward voltage IF = 1 mA IF = 10 mA FSSB Differential forward resistance IF = 10 mA rf Semiconductor Group V VF BAT 14-020 R BAT 14-050 R BAT 14-090 R BAT 14-110 R BAT 14-020 R BAT 14-050 R BAT 14-090 R BAT 14-110 R Single sideband noise figure FIF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz f = 3.0 GHz BAT 14-020 R f = 6.0 GHz BAT 14-050 R f = 9.3 GHz BAT 14-090 R f = 16 GHz BAT 14-110 R IF = 50 mA pF CT BAT 14-020 R BAT 14-050 R BAT 14-090 R BAT 14-110 R BAT 14-020 R BAT 14-050 R BAT 14-090 R BAT 14-110 R 2 dB - - - - 6.0 6.5 6.5 7.0 - - - - - - - - 3.5 4.0 7.0 10.0 - - - -