SILICON TRANSISTOR 2SA1412-2 PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES High Voltage : Vceo = -400 V High Speed : tr 0.7 us Complement to 25C3631-Z QUALITY GRADE Standard ; Please refer to Quality grade on NEC Semiconductor Devices (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Collector to Base Voltage Vcso -400 Vv Collector to Emitter Voltage Vceo -400 V Emitter to Base Voltage VEBO -7 Vv Collector Current (DC) Ic 2.0 A Collector Current (Pulse)* Ic 4.0 A Total Power Dissipation (Ta = 25 C)** Pr 2.0 W Junction Temperature Tj 150 C Storage Temperature Tstg-55 to +150 C * PW 10 ms, Duty Cycle 3 50 % ** When mounted on ceramic substrate of 7.5 cm? x 0.7 mm PACKAGE DIMENSIONS (in millimeters) 65+0.2. 0 23 +0.2 a 9 05+0.1 _ittart = { ' H 2 Se oy [ttt | wl = Lo + [1273 | 1910 . He oot 3 1 t} Hoi 0.8 140.2 0.9 MAX t 3 2.3|2.3 0.8 Id o 1. Base 2. Collector 3. Emitter 4, Collector Document No. TC-1635A (O.D. No. TC-5906) Date Published December 1993 M Printed in Japan NEC Corporation 1985 NEC 22 ag atat2-z- ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL | MIN. | Typ. | MAX. | UNIT TEST CONDITIONS: ~ | e6 Collector Cutoff Current Icso -10 LA Vee = -400 V, le = 0 . Emitter Cutoff Current . leso oo ~10 LA Ves = -5.0 V, Ic =0 DC Current Gain hre1* 40. 60 120 Vee =-5.0 V, Ic=-0.1A DC Current Gain hre2* 10 22 Vce = -5.0 V, lc=-1.0A Collector Saturation Voltage Veetsan* -0.25 -0.5 V lc=-+0.5A, lb =-0.1A Base Saturation Voltage Vacisat* ~0.85 | -1.2 Vv Ic =-0.5 A, lp =-0.1A Gain Bandwidth Product fr 40 MHz Vce = -10 V, le = -100 mA Output Capacitance Cob 30 pF Vee = -10 V, le = 0, f= 1.0 MHz Turn-on Time ton 0.03 0.5 us Ic=-1.0A, Ri = 1500 Storage Time tstg 1.4 2.0 Us Ibi = 1e2 = -0.2 A, Fall time tr 0.1 0.7 us | ec=150V * Pulsed: PW $ 350 ys, Duty Cycle S$ 2 % hre Classification MARKING L K hres 40to80 -~ 60 to 120 TYPICAL CHARACTERISTICS (Ta = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE SAFE OPERATING AREA = -5.0 1 10 x Ss | ~20 8 8 = -10 3 Cr 5 0.5 2 %,. . O 6 @ 5 : g & 8 02 5 on 2 co 4 VF a 0.1 Oo 2 With 2 Ceray 5 om? xo J 0.05 < & Subsiraie % ~0.02 Y without heatsink ~0.01 0 50 100 150 200 -1.0 ~10 -100 -1 000 Ta Ambient Temperature - C Vce Collector to Emitter Voltage V COLLECTOR CURRENT vs. REVERSE BIAS SAFE OPERATING AREA COLLECTOR TO EMITTER VOLTAGE ~ ~1.0 <= ~+2.0 <t -0.8 ' ' 5 5 5 -1.5 5 06 o oO 5 g 8 8 -1.0 3-04 8 > 8 | I -05 2 -0.2 0 -100 -200 -300 -400 -500 0 -1.0 -2.0 -3.0 -4.0 -5.0 2 Vce - Collector to Emitter Voltage - V Vce Collector to Emitter Voltage - V NEC COLLECTOR CURRENT vs. . COLLECTOR TO EMITTER VOLTAGE . 500 WA ~150 HA 100 pA Ic Collector Current - mA ip = 00 pA 0 -100 -200 -300 ~-400 -500 Vce - Collector to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 Vee =-5.0 V 300 100 30 10 hee - DC Current Gain 1 0.002 -0.005-0.01-0.02 -0.05 -0.1 0.2 -0.5 -1.0.-2.0 lc Collector Current -A TURN-OFF TIME vs. COLLECTOR CURRENT 5.0 lls = 5 = 150V lei = ez 2.0 1.0 0.5 0.2 t- Switching Time - Us 0.1 0.05 -0.05 -0.1 -0.2 05 -10 -2.0 Ic Collector Current -A 7 0.1 lc Collector Current - A ~0.003 Veeisay - Collector Saturation Voltage - V Veeisa) - Base Saturation Voltage - V 0.01 2SA1412-Z COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Vee =-5.0 -0.3 ~0.03 -0.01 0 O02 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Vee Base to Emitter Voltage V COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT 10 Ic/le = 5 0.1 ~0,002 -0.005-0.01-0,02 -0.05 0.1 -0.2 05 -1.0 -20 tc Collector Current - A NEC . 2SA1412-Z Reference Application note name No. Quality control of NEC semiconductors devices. TEI-1202 Quality contro! guide of semiconductors devices. MEI-1202 Assembly manual of semiconductors devices. , IE!-1207 Design of Push-Pull Type Switching Regulators (Basic). TEB-1002 Design of Push-Pull Type Switching Regulators (Applications). TEB-1003 Optimum Base Drive Conditions of Switching Power Transistors. TEB-1014 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. : NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual Property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control. systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. : Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6