2N5550 / 2N5551 2N5550 / 2N5551 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz NPN NPN Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Mae [mm] 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) 2N5550 2N5551 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 140 V 160 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 160 V 180 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 6V Power dissipation - Verlustleistung Ptot 625 mW 1) Collector current - Kollektorstrom (dc) IC 600 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis 2) VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 50 mA 2N5550 hFE hFE hFE 60 60 20 - - - - 250 - VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 50 mA 2N5551 hFE hFE hFE 80 80 30 - - - - 250 - Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) 1 2 IC = 10 mA, IB = 1 mA 2N5550 2N5551 VCEsat VCEsat - - - - 0.15 V 0.15 V IC = 50 mA, IB = 5 mA 2N5550 2N5551 VCEsat VCEsat - - - - 0.25 V 0.20 V Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 2N5550 / 2N5551 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 2N5550 VBEsat VBEsat - - - - 1.0 V 1.2 V IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 2N5551 VBEsat VBEsat - - - - 1.0 V 1.0 V ICBO ICBO - - - - 100 nA 50 nA IEBO - - 50 nA fT 100 MHz - 300 MHz CCBO - - 6 pF F F - - - - 10 dB 8 dB Collector-Base cutoff current - Kollektor-Base-Reststrom VCB = 100 V, (E open) VCB = 120 V, (E open) 2N5550 2N5551 Emitter-Base cutoff current - Emitter-Basis-Reststrom VEB = 4 V, (C open) Gain-Bandwidth Product - Transitfrequenz IC = 10 mA, VCE = 10 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 5 V, IC = 200 A, RG = 2 k, f = 30 Hz ... 15 kHz 2N5550 2N5551 Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA < 200 K/W 1) Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren 2N5400 / 2N5401 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG