2N5550 / 2N5551
2N5550 / 2N5551
NPN General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN
Version 2006-06-17
Dimensions - Maße [mm]
Power dissipation
Verlustleistung
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
2N5550 2N5551
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 140 V 160 V
Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 160 V 180 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 6 V
Power dissipation – Verlustleistung Ptot 625 mW 1)
Collector current – Kollektorstrom (dc) IC600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 50 mA
2N5550
hFE
hFE
hFE
60
60
20
–
–
–
–
250
–
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 50 mA
2N5551
hFE
hFE
hFE
80
80
30
–
–
–
–
250
–
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 10 mA, IB = 1 mA 2N5550
2N5551
VCEsat
VCEsat
–
–
–
–
0.15 V
0.15 V
IC = 50 mA, IB = 5 mA 2N5550
2N5551
VCEsat
VCEsat
–
–
–
–
0.25 V
0.20 V
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
16
18
9
2 x 2.54
CBE
2N5550 / 2N5551
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA 2N5550 VBEsat
VBEsat
–
–
–
–
1.0 V
1.2 V
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA 2N5551 VBEsat
VBEsat
–
–
–
–
1.0 V
1.0 V
Collector-Base cutoff current – Kollektor-Base-Reststrom
VCB = 100 V, (E open)
VCB = 120 V, (E open)
2N5550
2N5551
ICBO
ICBO
–
–
–
–
100 nA
50 nA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 4 V, (C open) IEBO – – 50 nA
Gain-Bandwidth Product – Transitfrequenz
IC = 10 mA, VCE = 10 V, f = 100 MHz fT100 MHz – 300 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCBO ––6 pF
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ,
f = 30 Hz ... 15 kHz
2N5550
2N5551
F
F
–
–
–
–
10 dB
8 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 200 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren 2N5400 / 2N5401
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2http://www.diotec.com/ © Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1
