LM108/LM108AQML
Operational Amplifiers
General Description
The LM108 is a precision operational amplifier having speci-
fications a factor of ten better than FET amplifiers over a
−55˚C to +125˚C temperature range.
The devices operate with supply voltages from ±2V to ±20V
and have sufficient supply rejection to use unregulated sup-
plies. Although the circuit is interchangeable with, and uses
the same compensation as the LM101A, an alternate com-
pensation scheme can be used to make it particularly insen-
sitive to power supply noise and to make supply bypass
capacitors unnecessary.
The low current error of the LM108 makes possible many
designs that are not practical with conventional amplifiers. In
fact, it operates from 10 MΩsource resistances, introducing
less error than devices like the 709 with 10 kΩsources.
Integrators with drifts less than 500 µV/sec and analog time
delays in excess of one hour can be made using capacitors
no larger than 1 µF.
Features
nMaximum input bias current of 3.0 nA over temperature
nOffset current less than 400 pA over temperature
nSupply current of only 300 µA, even in saturation
nGuaranteed drift characteristics
Ordering Information
NS PART NUMBER SMD PART NUMBER NS PACKAGE NUMBER PACKAGE DISCRIPTION
LM108AH/883 H08C 8LD Metal Can
LM108AJ-8/883 J08A 8LD CERDIP
LM108AJ/883 J14A 14LD CERDIP
LM108AWG/883 WG10A 10LD Ceramic SOIC
LM108AHRQML 5962R9863702QGA
100k rd(Si)
H08C 8LD Metal Can
LM108AHRQMLV 5962R9863702VGA
100k rd(Si)
H08C 8LD Metal Can
LM108AJ-8RQMLV 5962R9863702VPA
100k rd(Si)
J08A 8LD CERDIP
LM108AJRQML 5962R9863702QCA
100k rd(Si)
J14A 14LD CERDIP
LM108AJRQMLV 5962R9863702VCA
100k rd(Si)
J14A 14LD CERDIP
LM108AWGRQML 5962R9863702QZA
100k rd(Si)
WG10A 10LD Ceramic SOIC
LM108AWGRQMLV 5962R9863702VZA
100k rd(Si)
WG10A 10LD Ceramic SOIC
LM108AWRQML 5962R9863702QHA
100k rd(Si)
W10A 10LD CERPACK
LM108AWRQMLV 5962R9863702VHA
100k rd(Si)
W10A 10LD CERPACK
LM108H/883 H08C 8LD Metal Can
LM108J/883 J14A 14LD CERDIP
LM108J-8/883 J08A 8LD CERDIP
December 2005
LM108/LM108AQML Operational Amplifiers
© 2005 National Semiconductor Corporation DS201206 www.national.com
Connection Diagrams
Metal Can Package 14 Lead Dual-In-Line Package
20120613
*Package is connected to Pin 4 (V−)
**Unused pin (no internal connection) to allow for input anti-leakage guard
ring on printed circuit board layout.
See NS Package Number H08C
20120616
Top View
See NS Package Number J14A
8 Lead Dual-In-Line Package 10 Lead Flatpack/SOIC Package
20120615
Top View
See NS Package Number J08A
20120617
Top View
See NS Package Number W10A, WG10A
LM108/LM108AQML
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Schematic Diagram
20120608
LM108/LM108AQML
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Compensation Circuits
Standard Compensation Circuit
20120601
CO=30pF
**Bandwidth and slew rate are proportional to 1/Cf
Alternate Frequency Compensation
(Note 1)
20120602
**Bandwidth and slew rate are proportional to 1/CS
Note 1: Improves rejection of power supply noise by a factor of ten.
Feedforward Compensation
20120603
LM108/LM108AQML
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Absolute Maximum Ratings (Notes 2, 3)
LM108RH LM108/LM108A
Supply Voltage ±22V ±20V
Power Dissipation (Note 4)
Metal Can 8 LD 330mW @+125˚C
CERDIP 14LD 400mW @+125˚C
CERDIP 8LD 400mW @+125˚C
CERPACK 10LD 330mW @+125˚C
Ceramic SOIC 10 LD 330mW @+125˚C
Differential Input Current (Note 5) ±10 mA
Differential Input Voltage(Note 7) ±30V N/A
Input Voltage (Note 6) ±20V ±15V
Output Short-Circuit Duration Continuous
Operating Temperature Range −55˚C ≤T
A
≤+125˚C
Storage Temperature Range −65˚C ≤T
A
≤+150˚C
Thermal Resistance
θ
JA
Metal Can 8 LD Still Air
500LF / Min Air Flow
150˚C/W
86˚C/W
CERDIP 14LD Still Air
500LF / Min Air Flow
94˚C/W
55˚C/W
CERDIP 8LD Still Air
500LF / Min Air Flow
120˚C/W
68˚C/W
CERPACK 10LD Still Air
500LF / Min Air Flow
225˚C/W
142˚C/W
Ceramic SOIC 10 LD Still Air
500LF / Min Air Flow
225˚C/W
142˚C/W
θ
JC
Metal Can 8 LD 38˚C/W
CERDIP 14LD 13˚C/W
CERDIP 8LD 17˚C/W
CERPACK 10LD 21˚C/W
Ceramic SOIC 10 LD 21˚C/W
Package Weight (typical)
Metal Can 8 LD 990mg
CERDIP 14LD 2,180mg
CERDIP 8LD 1,090mg
CERPACK 10LD 225mg
Ceramic SOIC 10 LD 210mg
Maximum Junction Teperature 175˚C 150˚C
Lead Temperature (Soldering, 10 sec) 300˚C
ESD Tolerance (Note 8) 2000V
LM108/LM108AQML
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Quality Conformance Inspection
Mil-Std-883, Method 5005 - Group A
Subgroup Description Temp (˚C)
1 Static tests at +25˚C
2 Static tests at +125˚C
3 Static tests at −55˚C
4 Dynamic tests at +25˚C
5 Dynamic tests at +125˚C
6 Dynamic tests at −55˚C
7 Functional tests at +25˚C
8A Functional tests at +125˚C
8B Functional tests at −55˚C
9 Switching tests at +25˚C
10 Switching tests at +125˚C
11 Switching tests at −55˚C
LM108 Electrical Characteristics
DC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
V
CC
=±20V, V
CM
=0V
Symbol Parameter Conditions Notes Min Max Units Sub-
groups
V
IO
Input Offset Voltage V
CM
= -15V -2.0 2.0 mV 1
-3.0 3.0 mV 2, 3
V
CM
= 15V -2.0 2.0 mV 1
-3.0 3.0 mV 2, 3
-2.0 2.0 mV 1
-3.0 3.0 mV 2, 3
V
CC
=±5V -2.0 2,0 mV 1
-3.0 3.0 mV 2, 3
I
IO
Input Offset Current V
CM
= -15V -0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
V
CM
= 15V -0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
-0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
V
CC
=±5V -0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
±I
IB
Input Bias Current V
CM
= -15V -0.1 2.0 nA 1
-1.0 3.0 nA 2,
−0.1 3.0 nA 3
V
CM
= 15V -0.1 2.0 nA 1
-1.0 3.0 nA 2,
−0.1 3.0 nA 3
-0.1 2.0 nA 1
-1.0 3.0 nA 2,
−0.1 3.0 nA 3
V
CC
=±5V -0.1 2.0 nA 1
-1.0 3.0 nA 2,
−0.1 3.0 nA 3
PSRR Power Supply Rejection ±Ratio ±20V <= Vcc <=±5V 80 dB 1, 2, 3
LM108/LM108AQML
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LM108 Electrical Characteristics (Continued)
DC Parameters (Continued)
The following conditions apply to all the following parameters, unless otherwise specified.
V
CC
=±20V, V
CM
=0V
Symbol Parameter Conditions Notes Min Max Units Sub-
groups
CMRR Common Mode Rejection Ratio -15V <=V
CM
<= 15V 85 dB 1, 2, 3
+I
OS
Short Circuit Current V
CC
=±15V -30 -1.0 mA 1, 2, 3
-I
OS
Short Circuit Current V
CC
=±15V 1 30 mA 1,2,3
I
CC
Power Supply Current 0.6 mA 1
0.4 mA 2
0.8 mA 3
R
IN
Input Resistance (Note 13) 30 MΩ1
V
IN
Input Voltage Range V
CC
=±15V (Note 12) 14 V 1, 2
(Note 12) −14 V 1, 2
(Note 12) 13.5 V 3
(Note 12) −13.5 V 3
(Note 12) 15 V 1, 2, 3
(Note 12) −15 V 1, 2, 3
+V
OP
Output Voltage Swing V
CC
=±15V, R
L
= 10KΩ13 V 4,5,6
-V
OP
Output Voltage Swing V
CC
=±15V, R
L
= 10KΩ-13 V 4,5,6
+A
VS
Open Loop Voltage Gain V
CC
=±15V, R
L
= 10KΩ,
Vout=0to10V
(Note 10) 50 V/mV 4
(Note 10) 25 V/mV 5, 6
-A
VS
Open Loop Voltage Gain V
CC
=±15V, R
L
= 10KΩ
Vout=0to-10V
(Note 10) 50 V/mV 4
(Note 10) 25 V/mV 5, 6
AC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
V
CC
=±20V, V
CM
= 0V.
Symbol Parameter Conditions Notes Min Max Units Sub-
groups
TR
TR
Rise Time (Note 13) 1.0 µS 7
TR
OS
Overshoot (Note 13) 30 % 7
LM108/LM108AQML
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LM108A Electrical Characteristics
DC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
V
CC
=±20V, V
CM
=0V
Symbol Parameter Conditions Notes Min Max Units Sub-
groups
V
IO
Input Offset Voltage V
CM
= -15V -0.5 0.5 mV 1
-1.0 1.0 mV 2, 3
V
CM
= 15V -0.5 0.5 mV 1
-1.0 1.0 mV 2, 3
-0.5 0.5 mV 1
-1.0 1.0 mV 2, 3
V
CC
=±5V -0.5 0.5 mV 1
-1.0 1.0 mV 2, 3
I
IO
Input Offset Current V
CM
= -15V -0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
V
CM
= 15V -0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
-0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
V
CC
=±5V -0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
±I
IB
Input Bias Current V
CM
= -15V -0.1 2.0 nA 1
-1.0 3.0 nA 2
-0.1 3.0 nA 3
V
CM
= 15V -0.1 2.0 nA 1
-1.0 3.0 nA 2
-0.1 3.0 nA 3
-0.1 2.0 nA 1
-1.0 3.0 nA 2
-0.1 3.0 nA 3
V
CC
=±5V -0.1 2.0 nA 1
-1.0 3.0 nA 2
-0.1 3.0 nA 3
PSRR Power Supply Rejection Ratio ±20V <=V
CC
<=±5V 96 dB 1, 2, 3
CMRR Common Mode Rejection Ratio -15V <=V
CM
<= 15V 96 dB 1, 2, 3
+I
OS
Short Circuit Current V
CC
=±15V -30 -1.0 mA 1, 2, 3
-I
OS
Short Circuit Current V
CC
=±15V 1.0 30 mA 1, 2, 3
I
CC
Power Supply Current 0.6 mA 1
0.4 mA 2
0.8 mA 3
R
IN
Input Resistance (Note 13) 30 MΩ1
V
IN
Input Voltage Range V
CC
=±15V (Note 12) 14 V 1, 2
(Note 12) −14 V 1, 2
(Note 12) 13.5 V 3
(Note 12) −13.5 V 3
(Note 12) 15 V 1, 2, 3
(Note 12) −15 V 1, 2, 3
Delta V
IO
/
Delta T
Temperature Coefficient of
Input Offset Voltage
(Note 13) 5.0 µV/˚C 1, 2, 3
LM108/LM108AQML
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LM108A Electrical Characteristics (Continued)
DC Parameters (Continued)
The following conditions apply to all the following parameters, unless otherwise specified.
V
CC
=±20V, V
CM
=0V
Symbol Parameter Conditions Notes Min Max Units Sub-
groups
Delta I
IO
/
Delta T
Temperature Coefficient of
Input Offset Current
(Note 13) 2.5 pA/˚C 1, 2, 3
+V
OP
Output Voltage Swing V
CC
=±15V, R
L
= 10KΩ13 V 4,5,6
-V
OP
Output Voltage Swing V
CC
=±15V, R
L
= 10KΩ-13 V 4,5,6
+A
VS
Open Loop Voltage Gain V
CC
=±15V, R
L
= 10KΩ,
Vout=0to10V
(Note 10) 80 V/mV 4
(Note 10) 40 V/mV 5, 6
-A
VS
Open Loop Voltage Gain V
CC
=±15V, R
L
= 10KΩ,
Vout=0to-10V
(Note 10) 80 V/mV 4
(Note 10) 40 V/mV 5, 6
AC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
V
CC
=±20V, V
CM
=0V
Symbol Parameter Conditions Notes Min Max Units Sub-
groups
TR
TR
Transient Response Rise Time (Note 13) 1.0 µS 7
LM108/LM108AQML
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LM108A Rad Hard — Electrical Characteristics
DC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
±V
CC
=±20V, V
CM
= 0V, R
S
=50Ω
Symbol Parameter Conditions Notes Min Max Units
Sub-
groups
V
IO
Input Offset Voltage
+V
CC
= 35V, -V
CC
= -5V,
V
CM
= -15V
-0.5 0.5 mV 1
-1.0 1.0 mV 2, 3
+V
CC
= 5V, -V
CC
= -35V,
V
CM
= 15V
-0.5 0.5 mV 1
-1.0 1.0 mV 2, 3
-0.5 0.5 mV 1
-1.0 1.0 mV 2, 3
+V
CC
= +5V, -V
CC
= -5V -0.5 0.5 mV 1
-1.0 1.0 mV 2, 3
Delta V
IO
/
Delta T
Temperature Coefficient of
Input Offset Voltage
25˚C ≤T
A
≤+125˚C (Note 9) -5.0 5.0 µV/˚C 2
-55˚C ≤T
A
≤25˚C (Note 9) -5.0 5.0 µV/˚C 3
I
IO
Input Offset Current +V
CC
= 35V, -V
CC
= -5V,
V
CM
= -15V
-0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
+V
CC
= 5V, -V
CC
= -35V,
V
CM
= 15V
-0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
-0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
+V
CC
= +5V, -V
CC
= -5V -0.2 0.2 nA 1
-0.4 0.4 nA 2, 3
Delta I
IO
/
Delta T
Temperature Coefficient of
Input Offset Current
25˚C ≤T
A
≤+125˚C (Note 9) -2.5 2.5 pA/˚C 2
-55˚C ≤T
A
≤25˚C (Note 9) -2.5 2.5 pA/˚C 3
±I
IB
Input Bias Current +V
CC
= 35V, -V
CC
= -5V,
V
CM
= -15V
-0.1 2.0 nA 1
-1.0 2.0 nA 2
-0.1 3.0 nA 3
+V
CC
= 5V, -V
CC
= -35V,
V
CM
= 15V
-0.1 2.0 nA 1
-1.0 2.0 nA 2
-0.1 3.0 nA 3
-0.1 2.0 nA 1
-1.0 2.0 nA 2
-0.1 3.0 nA 3
+V
CC
= +5V, -V
CC
= -5V -0.1 2.0 nA 1
-1.0 2.0 nA 2
-0.1 3.0 nA 3
+PSRR Power Supply Rejection Ratio +V
CC
= 10V, -V
CC
= -20V -16 16 µV/V 1, 2, 3
-PSRR Power Supply Rejection Ratio +V
CC
= 20V, -V
CC
= -10V -16 16 µV/V 1, 2, 3
CMRR Common Mode Rejection Ratio V
CM
=±15V 96 dB 1, 2, 3
+I
OS
Short Circuit Current +V
CC
= +15V,
-V
CC
= -15V, t ≤25mS -20 mA 1, 2, 3
-I
OS
Short Circuit Current +V
CC
= +15V,
-V
CC
= -15V, t ≤25mS 20 mA 1, 2, 3
I
CC
Power Supply Current +V
CC
= +15V,
-V
CC
= -15V
0.6 mA 1, 2
0.8 mA 3
+V
OP
Output Voltage Swing R
L
= 10KΩ16 V 4,5,6
-V
OP
Output Voltage Swing R
L
= 10KΩ-16 V 4,5,6
+A
VS
Open Loop Voltage Gain R
L
= 10KΩ, Vout = +15V (Note 10) 80 V/mV 4
(Note 10) 40 V/mV 5, 6
LM108/LM108AQML
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LM108A Rad Hard — Electrical Characteristics (Continued)
DC Parameters (Continued)
The following conditions apply to all the following parameters, unless otherwise specified.
±V
CC
=±20V, V
CM
= 0V, R
S
=50Ω
Symbol Parameter Conditions Notes Min Max Units
Sub-
groups
-A
VS
Open Loop Voltage Gain R
L
= 10KΩ, Vout = -15V (Note 10) 80 V/mV 4
(Note 10) 40 V/mV 5, 6
A
VS
Open Loop Voltage Gain ±V
CC
=±5V, R
L
= 10KΩ,
Vout = ±2V (Note 10) 20 V/mV 4, 5, 6
DC Drift Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
±V
CC
=±20V, V
CM
= 0V, R
S
=50Ω
Delta calculations performed on JAN S and QMLV devices at group B, subgroup 5 only.
Symbol Parameter Conditions Notes Min Max Units
Sub-
groups
V
IO
Input Offset Voltage -0.25 0.25 mV 1
±I
IB
Input Bias Current -0.5 0.5 nA 1
AC Parameters
The following conditions apply to all the following parameters, unless otherwise specified.
AC ±V
CC
=±20V, V
CM
= 0V, R
S
=50Ω
Symbol Parameter Conditions Notes Min Max Units
Sub-
groups
TR
TR
Transient Response Rise Time R
L
= 10KΩ,C
L
= 100pF,
f<1KHz, Vin = +50mV 1,000 nS 9, 10, 11
TR
OS
Transient Response Overshoot R
L
= 10KΩ,C
L
= 100pF,
f<1KHz, Vin = +50mV 50 % 9, 10, 11
+S
R
Slew Rate A
V
=1,
V
IN
= -5V to +5V 0.05 V/µS 9, 10, 11
−S
R
Slew Rate A
V
=1,
V
IN
= +5V to -5V 0.05 V/µS 9, 10, 11
NI
BB
Noise Broadband BW = 10Hz to 5KHz,
R
S
=0Ω15 µV
RMS
9
NI
PC
Noise Popcorn BW = 10Hz to 5KHz,
R
S
= 100KΩ40 µV
PK
9
Post Radiation Parameters @+25˚C (Note 11)
The following conditions apply to all the following parameters, unless otherwise specified.
DC: ±V
CC
=±20V, V
CM
= 0V, R
S
=50Ω
Symbol Parameter Conditions Notes Min Max Units
Sub-
groups
±I
IB
Input Bias Current
+V
CC
= 35V, -V
CC
= -5V,
V
CM
= -15V (Note 11) 5.0 nA 1
+V
CC
= 5V, -V
CC
= -35V,
V
CM
= -15V (Note 11) 5.0 nA 1
(Note 11) 5.0 nA 1
+V
CC
= +5V, -V
CC
= -5V (Note 11) 5.0 nA 1
LM108/LM108AQML
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LM108A Rad Hard — Electrical Characteristics (Continued)
Post Radiation Parameters @+25˚C (Note 11) (Continued)
The following conditions apply to all the following parameters, unless otherwise specified.
DC: ±V
CC
=±20V, V
CM
= 0V, R
S
=50Ω
Symbol Parameter Conditions Notes Min Max Units
Sub-
groups
I
IO
Input Offset Current +V
CC
= 35V, -V
CC
= -5V,
V
CM
= -15V (Note 11) 0.5 nA 1
+V
CC
= 5V, -V
CC
= -35V,
V
CM
= -15V (Note 11) 0.5 nA 1
(Note 11) 0.5 nA 1
+V
CC
= +5V, -V
CC
= -5V (Note 11) 0.5 nA 1
Note 2: Parameters have only been entered in the LM108 / LM108A column if different from LM108RH
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 4: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package
junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable power dissipation at any temperature is PDmax=(T
Jmax - TA)/θJA
or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 5: The inputs are shunted with back-to-back diodes for over voltage protection. Therefore, excessive current will flow if a differential input voltage in excess
of 1V is applied between the inputs unless some limiting resistance is used.
Note 6: For supply voltages less than ±20V, the absolute maximum input voltage is equal to the supply voltage.
Note 7: This rating is ±1.0V unless resistances of 2K Ohms or greater are inserted in series with the inputs to limit current in the input shunt diodes to the maximum
allowable value..
Note 8: Human body model, 1.5 kΩin series with 100 pF.
Note 9: Calculated parameter
Note 10: Datalog reading in K = V/mV
Note 11: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are guaranteed only for the conditions as specified in MIL-STD-883, Method 1019.5.
Note 12: Parameter tested Go-No-Go
Note 13: Guaranteed parameter not tested.
Note 14: Calculated parameter for Class “S” only
LM108/LM108AQML
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Typical Performance Characteristics
Input Currents Offset Error
20120618 20120619
Drift Error Input Noise Voltage
20120620 20120621
Power Supply Rejection
Closed Loop
Output Impedance
20120622 20120623
Voltage Gain Output Swing
20120624 20120625
LM108/LM108AQML
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Typical Performance Characteristics (Continued)
Supply Current
Open Loop
Frequency Response
20120626 20120627
Large Signal
Frequency Response
Voltage Follower
Pulse Response
20120628 20120629
LM108/LM108AQML
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Typical Applications
Sample and Hold
20120604
†Teflon polyethylene or polycarbonate dielectric capacitor
Worst case drift less than 2.5 mV/sec
High Speed Amplifier with Low Drift and Low Input Current
20120605
LM108/LM108AQML
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Typical Applications (Continued)
Fast Summing Amplifier (Note 15)
20120612
*In addition to increasing speed, the LM101A raises high and low frequency gain, increases output drive capability and eliminates thermal feedback.
Note 15: Power Bandwidth: 250 KHz
Small Signal Bandwidth: 3.5 MHz
Slew Rate: 10V/µS
LM108/LM108AQML
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Revision History
Date
Released
Revision Section Originator Changes
03/23/05 A New release, corporate format.
Ordering information table, Electrical
sections for the LM108 and
LM108A.
L. Lytle 3 MDS data sheets converted into one
Corp. datasheet format. MRLM108A-X-RH
rev. 1A0, MNLM108A-X rev 1A1,
MNLM108–X rev 0BL. Deleted following:
NSID LM108AW/883 and
LM108AJ-8RQML, no longer offered; from
LM108 electrical’s Delta V
IO
/Delta T, Delta
I
IO
/Delta T, Drift Parameters; from
LM108A electrical’s Drift Parameters.
Reason: referenced products are 883
only.
12/14/05 B Rad Hard Electricals, DC
Parameters
R. Malone +I
OS
from -15 mA min to -20 mA min and
-I
OS
from +15 mA max to +20 mA max.
Reason: To reflect SMD update. Revision
A will be archived.
LM108/LM108AQML
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Physical Dimensions inches (millimeters) unless otherwise noted
Ceramic Dual-In-Line Package (J)
NS Package Number J08A
Ceramic Dual-In-Line Package (J)
NS Package Number J14A
LM108/LM108AQML
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Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
Metal Can Package (H)
NS Package Number H08C
S.O. Package (WG)
NS Package Number WG10A
LM108/LM108AQML
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Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
Ceramic Flatpack Package (W)
NS Package Number W10A
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LM108/LM108AQML Operational Amplifiers
