MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE A B E D C Q - THD. (2 TYP.) S E R E C G F R G P - THD. (2 TYP.) H M N - DIA. (2 TYP.) J L LABEL K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration, with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diodes u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking C E E G Applications: u UPS u Forklift Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 3.82 97.0 K 1.14 29.0 -0.5 B 3.15 80.0 L 1.42 36.0 -0.5 C 0.69 17.5 M 0.28 7.0 D 1.14 29.0 N 0.26 Dia. Dia. 6.5 E 1.04 26.5 P M4 Metric M4 +1.0 +1.0 F 1.89 48.0 Q M6 Metric M6 G 0.63 16.0 R 0.51 13.0 H 0.24 6.0 S 0.35 9.0 J 0.26 6.7 Ordering Information: Example: Select the complete nine digit module part number you desire from the table below - i.e. CM450HA-5F is a 250V (VCES), 450 Ampere Single IGBT Module. Type Current Rating Amperes VCES Volts (x 50) CM 450 5 Sep.1998 MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25C unless otherwise specified Ratings Symbol CM450HA-5F Units Junction Temperature Tj -40 to 150 C Storage Temperature Tstg -40 to 125 C Collector-Emitter Voltage (G-E Short) VCES 250 Volts Gate-Emitter Voltage (C-E Short) VGES 20 Volts IC 450 Amperes ICM 900* Amperes IE 450 Amperes Peak Emitter Current** IEM 900* Amperes Maximum Collector Dissipation (TC = 25C) Pc 735 Watts Mounting Torque, M6 Main Terminal -- 1.96 ~ 2.94 N*m Mounting Torque, M6 Mounting -- 1.96 ~ 2.94 N*m Mounting Torque, M4 Terminal -- 0.98 ~ 1.47 N*m Weight -- 270 Grams Viso 2500 Vrms Collector Current (TC = 25C) Peak Collector Current (Tj 150C) Emitter Current** (TC = 25C) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V -- -- 1.0 mA IGES VGE = VGES, VCE = 0V -- -- 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 45mA, VCE = 10V 3.0 4.0 5.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 450A, VGE = 10V, -- 1.2 1.7** Volts IC = 450A, VGE = 10V, Tj = 150C -- 1.1 -- Volts Gate Leakage Current Total Gate Charge QG VCC = 100V, IC = 450A, VGE = 10V -- 1760 -- nC Emitter-Collector Voltage VEC IE = 450A, VGE = 0V -- -- 2.0 Volts Min. Typ. Max. Units -- -- 132 nF -- -- 6 nF -- -- 4.5 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switching Turn-off Delay Time Times Fall Time Test Conditions VGE = 0V, VCE = 10V -- -- 1200 ns tr VCC = 100V, IC = 450A, -- -- 2700 ns td(off) VGE1 = VGE2 = 10V, RG = 5.6, -- -- 900 ns tf Resistive Load -- -- 500 ns Diode Reverse Recovery Time trr IE = 450A, diE/dt = -900A/s -- -- 300 ns Diode Reverse Recovery Charge Qrr IE = 450A, diE/dt = -900A/s -- 7.6 -- C Max. Units Thermal and Mechanical Electrical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c) Per IGBT -- -- 0.17 C/W Thermal Resistance, Junction to Case Rth(j-c) Per Free Wheel Diode -- -- 0.23 C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied -- -- 0.090 C/W Sep.1998 MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE 10 8 6 800 5.5 600 400 5.25 200 5.0 4.5 VCE = 10V Tj = 25C Tj = 125C 800 VGE = 15V Tj = 25C Tj = 125C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5.75 VGE = 15V 600 400 200 4.75 1.5 1.0 0.5 0 0 0 1 2 3 4 5 0 0 2 4 6 8 0 10 200 400 600 800 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 5 3 IC = 450A 2 IC = 900A 1 IC = 180A VGE = 0V CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 4 1000 103 Tj = 25C Tj = 25C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2.0 1000 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1000 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 103 102 Cies 102 101 Coes Cres 5 10 15 1.0 1.2 1.4 1.6 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, t rr, (ns) VCC = 100V VGE = 10V RG = 5.6 Tj = 125C td(off) 103 td(on) tf tr 102 101 1.8 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 104 SWITCHING TIME, (ns) 0.8 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 COLLECTOR CURRENT, IC, (AMPERES) 103 di/dt = -900A/sec Tj = 25C t rr 101 101 Irr 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 103 102 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 101 103 20 IC = 450A GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 100 10-1 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 101 0.6 0 VCC = 50V 15 VCC = 100V 10 5 0 0 1 2 3 4 5 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.17C/W 100 10-1 10-2 10-3 10-3 10-2 10-1 TIME, (s) 100 101 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.23C/W 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 TIME, (s) Sep.1998