VS-220CNQ030PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 220 A FEATURES Lug terminal anode 1 Lug terminal anode 2 * 150 C TJ operation * Center tap module * Low forward voltage drop * High frequency operation * Guard ring for enhanced ruggedness and long term reliability Base common cathode TO-244 * UL approved file E222165 * Designed and qualified for industrial level * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 220 A VR 30 V Package TO-244 Circuit configuration Two diodes common cathode The VS-220CNQ.. center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM IFSM tp = 5 s sine VF 110 Apk, TJ = 125 C (per leg) TJ Range VALUES UNITS 220 A 30 V 18 000 A 0.41 V -55 to +150 C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-220CNQ030PbF UNITS 30 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL TEST CONDITIONS IF(AV) 50 % duty cycle at TC = 122 C, rectangular waveform VALUES UNITS 110 per leg per device 220 A 5 s sine or 3 s rect. pulse 18 000 Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 C, IAS = 15 A, L = 1 mH 99 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 22 A Repetitive avalanche current per leg 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 1950 Revision: 09-May-17 Document Number: 94169 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-220CNQ030PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 110 A Maximum forward voltage drop per leg See fig. 1 110 A Maximum reverse leakage current per leg See fig. 2 Maximum junction capacitance per leg TJ = 25 C IRM (1) 0.59 0.55 10 VR = Rated VR TJ = 125 C V 0.41 TJ = 125 C 220 A UNITS 0.49 TJ = 25 C 220 A VFM (1) VALUES mA 650 CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 C Typical series inductance per leg LS From top of terminal hole to mounting plane Maximum voltage rate of change dV/dt Rated VR 7400 pF 7.0 nH 10 000 V/s Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg per module Thermal resistance, case to heatsink SYMBOL MIN. TYP. MAX. UNITS TJ, TStg -55 - 150 C - - 0.38 - - 0.19 - 0.10 - RthJC RthCS Weight 68 - C/W g - 2.4 oz. Mounting torque 35.4 (4) - 53.1 (6) Mounting torque center hole 30 (3.4) - 40 (4.6) Terminal torque 44.2 (5) - 80 2" lever pull - - 35 1000 10 000 IR - Reverse Current (mA) - - IF - Instantaneous Forward Current (A) 30 (3.4) Vertical pull TJ = 150 C 100 TJ = 125 C 10 TJ = 25 C 1 0.1 lbf in (N m) lbf in TJ = 150 C 1000 TJ = 125 C 100 TJ = 100 C 10 TJ = 75 C 1 TJ = 50 C TJ = 25 C 0.1 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) 0 5 10 15 20 25 30 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) Revision: 09-May-17 Document Number: 94169 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-220CNQ030PbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 C 1000 0 5 10 15 25 20 30 35 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 1 0.1 0.01 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.001 0.00001 0.001 0.0001 0.01 10 1.0 0.1 t1 - Rectangular Pulse Duration (s) 80 160 Average Power Loss (W) Allowable Case Temperature (C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) 150 DC 140 130 Square wave (D = 0.50) 80 % rated VR applied 120 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 70 60 50 RMS limit 40 DC 30 20 10 See note (1) 0 100 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) Revision: 09-May-17 Document Number: 94169 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-220CNQ030PbF www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 100 000 10 000 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) ORDERING INFORMATION TABLE Device code VS- 22 0 C N Q 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Average current rating (x 10) 3 - Product silicon identification 4 - C = circuit configuration 5 - N = not isolated 6 - Q = Schottky rectifier diode 7 - Voltage rating (30 V) 8 - Lead (Pb)-free 030 PbF 7 8 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95021 Revision: 09-May-17 Document Number: 94169 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-244 DIMENSIONS in millimeters (inches) 35 (1.37) REF. 13 (0.51) 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 40 (1.57) 80 (3.15) O 5.2 (O 0.20) 3 12.6 (0.5) O 7.2 (O 0.28) (2 places) 3 1 2 21 (0.82) 20 (0.78) 1/4" - 20 UNC 9.6 (0.37) MIN. 93 (3.66) MAX. Revision: 24-Apr-15 Document Number: 95021 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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