©2004 Fairchild Semiconductor Corporation
October 2004
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
EcoSPARKTM 300mJ , 400V, N-Channel Ignition IGBT
General Description
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and
ISL9V3040S3 are the next generation ignition IGBTs that offer
outstanding SCIS capability in the space saving D-Pak (TO-252), as
well as the industry standard D²-Pak (TO-263), and TO-262 and TO-
220 plastic packages. This device is intended for use in automotive
ignition ci rcuits, speci fically a s a coil d river. In ternal d iode s provide
voltage clamping without the need for external components.
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
F ormerly Developmental Type 49362
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Space saving D-Pak package availability
• SCIS Energy = 300mJ at TJ = 25oC
• Logic Level Gate Drive
Device Ma xi mum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Ratings Units
BVCER Collect or to Emitter Breakdown Voltage (IC = 1 mA) 430 V
BVECS Emitter to Collector Voltage - Reverse Battery Cond ition (IC = 10 mA) 24 V
ESCIS25 At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy 300 mJ
ESCIS150 At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy 170 mJ
IC25 Collector Current Continuous , At TC = 25°C, See Fig 9 21 A
IC110 Collector Current Continuous, At TC = 110°C, See Fig 9 17 A
VGEM Gate to Emitter Voltage Continuous ±10 V
PDPow er Dissipation Total TC = 25°C 150 W
Power Dissipation Derating TC > 25°C 1.0 W/°C
TJOperating Junction Temperature Range -40 to 175 °C
TSTG Stor age J unction Temperature Range -40 to 175 °C
TLMax Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C
Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C
ESD Electrostatic Discharge Voltage at 100pF, 1500Ω4kV
Package
GATE
COLLECTOR
EMITTER
R
2
R
1
Symbol
JEDEC TO-252AA
D-Pak
D²-Pak
JEDEC TO-263AB
COLLECTOR
(FLANGE)
JEDEC TO-220AB
E
G
E
G
JEDEC TO-262AA
EG
C
EG
C
©2004 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Package Marking and Ordering Information
Electrical Characteristics TA = 25°C unless otherwise noted
Off State Characteristics
On State Charac t eris ti cs
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
V3040D ISL9V3040D3ST TO-252AA 330mm 16mm 2500
V3040S ISL9V3040S3ST TO-263AB 330mm 24mm 800
V3040P ISL9V3040P3 TO-220AA Tube N/A 50
V3040S ISL9V3040S3 TO-262AA Tube N/A 50
V3040D ISL9V3040D3S TO-252AA Tube N/A 75
V3040S ISL9V3040S3S TO-263AB Tube N/A 50
Symbol Par a m e ter Test Conditions Min Typ Max Units
BVCER Collect or to Emitter Breakdown Voltage IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
370 400 430 V
BVCES Collector to Emitter Breakdown Volt age IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
390 420 450 V
BVECS Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,
TC = 25°C30 - - V
BVGES Gate to Emitter Breakdown Voltage IGES = ± 2mA ±12 ±14 - V
ICER Collector to Emitter Leakage Current VCER = 250V,
RG = 1KΩ,
See Fig. 11
TC = 25°C- - 25 µA
TC = 150°C- - 1 mA
IECS Emitter to Collector Leakage Current VEC = 24V , See
Fig. 11 TC = 25°C- - 1 mA
TC = 150°C- - 40 mA
R1Series Ga te Resistance - 70 - Ω
R2Gate to Emitter Resistance 10K - 26K Ω
VCE(SAT) Collector to Emitter Saturation Voltage IC = 6A,
VGE = 4V TC = 25°C,
See Fig. 3 - 1.25 1.60 V
VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A,
VGE = 4.5V TC = 150°C,
See Fig. 4 - 1.58 1.80 V
VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A,
VGE = 4.5V TC = 150°C - 1.90 2.20 V
QG(ON) Gate Charge IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14 -17-nC
VGE(TH) Ga te to Emitter Threshold Voltage IC = 1.0mA,
VCE = VGE,
See Fig. 10
TC = 25°C1.3 - 2.2 V
TC = 150°C0.75 - 1.8 V
VGEP Gate to Emitter Plateau Voltage IC = 10A, VCE = 12V - 3.0 - V
td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-0.74µs
trR Current Rise Time-Resistive - 2.1 7 µs
td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500µHy,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
- 4.8 15 µs
tfL Current Fall Time-Inductive - 2.8 15 µs
SCIS Self Clamped Inductive Switching T J = 25°C, L = 3.0 mHy,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
- - 300 mJ
RθJC Ther m al Resistance Junction-Case All packages - - 1.0 °C/W
©2004 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typical Performance Curves
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp Figure 2. Self Clamped Inductive Switching
Current vs Inductance
Figure 3. Collector to Emitter On-State Voltage vs
Junction Tem peratu r e Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
tCLP, TIME IN CLAMP (µS)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
25
15
5
30
20
10
0
RG = 1kΩ, VGE = 5V,Vdd = 14V
20017515001255025 75 100
TJ = 25°C
TJ = 150°C
SCIS Curves valid for Vclamp Voltages of <430V
25
15
5
30
20
10
0
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
0102468
TJ = 25°C
TJ = 150°C
L, INDUCTANCE (mHy)
RG = 1kΩ, VGE = 5V,Vdd = 14V
SCIS Curves valid for Vclamp Voltages of <430V
1.30
1.26
1.22
1.18
1.14-75 25-25 17512575-50 0 50 100 150
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE = 4.0V
VGE = 3.7V
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
ICE = 6A
-75 25-25 17512575-50 0 50 100 150
1.8
1.7
1.6
1.5
1.4
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE = 10A
1.3
1.2
VGE = 4.0V
VGE = 3.7V
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
ICE, COLLECTOR TO EM ITT ER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
20
0
10
02.01.0 3.0 4.0
25
15
5
TJ = - 40°C
VGE = 4.0V
VGE = 3.7V
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
VGE = 4.0V
VGE = 3.7V
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
TJ = 25°C
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
20
10
0
25
15
5
02.01.0 3.0 4.0
©2004 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typical Performance Curves (Continued)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current Figure 8. Transfer Characteristics
Figure 9. DC Collector Current vs Case
Temperature Figure 10. Threshold Voltage vs Junction
Temperature
Figure 11. Leakage Current vs Junction
Temperature Figure 12. Switching Time vs Junction
Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
15
5
0
20
10
02.01.0 3.0 4.0
VGE = 4.0V
VGE = 3.7V
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
TJ = 175°C
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE, GATE TO EMITTER VOLTAGE (V)
2.01.0 3.0 4.0
25
15
5
0
20
10
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 5V
TJ = 25°C
TJ = 150°C
2.51.5 3.5 4.5
TJ = -40°C
ICE, DC COLLECTOR CURRENT (A)
TC, CASE TEMPERATURE (°C)
25
25 1751257550 100 150
20
15
10
5
0
VGE = 4.0V
2.2
17550 100
2.0
1.8
1.6
1.4
1.0
VCE = VGE
VTH, THRESHOLD VOLTAGE (V)
TJ JUNCTION TEMPERATURE (°C)
1500-50 1257525-25
1.2
ICE = 1mA
LEAKAGE CURRENT (µA)
TJ, JUNCTION TEMPERATURE (°C)
1000
10
0.1
10000
100
1
25-25 17512575-50 0 50 100 150
VCES = 250V
VECS = 24V
VCES = 300V
25 1751257550 100 150
TJ, JUNCTION TEMPERATURE (°C)
SWITCHING TIME (µS)
12
10
8
6
4
2
ICE = 6.5A, VGE = 5V, RG = 1KΩ
Resistive tOFF
Inductive tOFF
Resistive tON
©2004 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typical Performance Curves (Continued)
Figure 13. Capacitance vs Collector to Emitter
Voltage Figur e 14. Gate Charge
Figure 15. Breakdown Voltage vs Series Gate Resistance
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
C, CAPACITANCE (pF)
VCE, COLLECTOR TO EMITT ER VOLTAGE (V)
1600
800
400
1200
0105152025
0
CIES
COES
CRES
FREQUENCY = 1 MHz
QG, GATE CHARGE (nC)
VGE, GATE TO EMITTER VOLTAGE (V)
0
2
4
8
0 4 8 1216202428
3
5
7
6
1
32
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
VCE = 6V
VCE = 12V
BVCER, BREAKDOWN VOLTAGE (V)
RG, SERIES GATE RESISTANCE (kΩ)
430
410
400
420
10 20001000 3000
390 100
415
405
425
395
TJ = - 40°C
TJ = 25°C
TJ = 175°C
ICER = 10mA
ZthJC, NORMALIZED THERMAL RESPONSE
T1, RECTANGULAR PULSE DURATION (s)
100
10-2
10-1
10-2
10-3
10-4
10-5 10-1
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
t
1
t
2
P
D
10-6
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10-3
©2004 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Test Circuit and Waveforms
Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit
Figure 19. Energy Test Circuit Figure 20. Energy Waveforms
RGG
C
E
VCE
L
PULSE
GEN DUT RG = 1KΩ+
-
VCE
DUT
5V
C
G
E
LOAD
R
or
L
tP
VGE
0.01Ω
L
IAS
+
-
VCE
VDD
RG
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
DUT
G
C
E
VDD
VCE
BVCES
tP
IAS
tAV
0
©2004 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D3, October 2004
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
SPICE Thermal Model
REV 7 March 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P 3 /
ISL9V3040S3
CTHERM1 th 6 2.1e -3
CTHERM2 6 5 1.4e -1
CTHERM3 5 4 7.3e -3
CTHERM4 4 3 2.1e -1
CTHERM5 3 2 1.1e -1
CTHERM6 2 tl 6.2e +6
RTHERM1 th 6 1.2e -1
RTHERM2 6 5 1.9e -1
RTHERM3 5 4 2.2e -1
RTHERM4 4 3 6.0e -2
RTHERM5 3 2 5.8e -2
RTHERM6 2 tl 1.6e -3
SABER Thermal Model
SABER thermal model
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P 3 /
ISL9V3040S3
template thermal_model th tl
therma l _c th, tl
{
ctherm.ctherm1 th 6 = 2.1e -3
ctherm.ctherm2 6 5 = 1.4e -1
ctherm.ctherm3 5 4 = 7.3e -3
ctherm.ctherm4 4 3 = 2.2e -1
ctherm.ctherm5 3 2 =1.1e -1
ctherm.cthe rm6 2 tl = 6.2e +6
rtherm. rtherm1 th 6 = 1.2e -1
rtherm. rtherm2 6 5 = 1.9e -1
rtherm. rtherm3 5 4 = 2.2e -1
rtherm. rtherm4 4 3 = 6.0e -2
rtherm. rtherm5 3 2 = 5.8e -2
rtherm. rtherm6 2 tl = 1.6e -3
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th JUNCTION
CASE
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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