LTC5530 Precision 300MHz to 7GHz RF Detector with Shutdown and Gain Adjustment U DESCRIPTIO FEATURES Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 7GHz* Wide Input Power Range: -32dBm to 10dBm Buffered Detector Output with External Gain Control Low Starting Voltage: 120mV 35mV for Gain = 2X Wide VCC Range of 2.7V to 6V Low Operating Current: 500A Low Shutdown Current: <2A Available in a Low Profile (1mm) SOT-23 Package U APPLICATIO S 802.11a, 802.11b, 802.11g, 802.15, 802.16 Multimode Mobile Phone Products Optical Data Links Wireless Data Modems Wireless and Cable Infrastructure RF Power Alarm Envelope Detector The RF input voltage is peak detected using an on-chip Schottky diode. The detected voltage is buffered and supplied to the VOUT pin. The output buffer gain is set via external resistors. A power saving shutdown mode reduces current to less than 2A. The LTC5530 operates with input power levels from -32dBm to 10dBm. , LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a trademark of Linear Technology Corporation. *Higher frequency operation is achievable with reduced performance. Consult factory for more information. U The LTC(R)5530 is an RF power detector for RF applications operating in the 300MHz to 7GHz range. A temperature compensated Schottky diode peak detector and buffer amplifier are combined in a small ThinSOTTM package. The supply voltage range is optimized for operation from a single lithium-ion cell or 3xNiMH. TYPICAL APPLICATIO Output Voltage vs RF Input Power 3600 33pF RF INPUT 1 LTC5530 VCC 6 RFIN VCC 100pF 2 DISABLE ENABLE 3 GND VOUT 5 RA SHDN VM 5530 TA01 4 RB 0.1F VOUT OUTPUT VOLTAGE (mV) 300MHz to 7GHz RF Power Detector VCC = 3.6V 3200 TA = 25C GAIN = 2 2800 2400 2000 1600 300MHz 1000MHz 2000MHz 3000MHz 4000MHz 5000MHz 6000MHz 7000MHz 1200 800 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 8 5530 TA02 5530f 1 LTC5530 U W W W ABSOLUTE AXI U RATI GS U W U PACKAGE/ORDER I FOR ATIO (Note 1) VCC, VOUT, SHDN, VM ...................................... -0.3V to 6.5V RFIN Voltage ......................................(VCC 1.5V) to 7V RFIN Power (RMS) .............................................. 12dBm IVOUT ...................................................................... 5mA Operating Temperature Range (Note 2) .. - 40C to 85C Maximum Junction Temperature ......................... 125C Storage Temperature Range ................ - 65C to 150C Lead Temperature (Soldering, 10 sec).................. 300C ORDER PART NUMBER TOP VIEW LTC5530ES6 RFIN 1 6 VCC GND 2 5 VOUT SHDN 3 4 VM S6 PART MARKING S6 PACKAGE 6-LEAD PLASTIC TSOT-23 TJMAX = 125C, JA = 250C/W LBDX Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off, RA = RB = 1k, SHDN = HI unless otherwise noted. PARAMETER CONDITIONS MIN VCC Operating Voltage TYP 2.7 MAX UNITS 6 0.5 V IVCC Operating Current IVOUT = 0mA 0.7 mA IVCC Shutdown Current SHDN = LO VOUT (No RF Input) RLOAD = 2k SHDN = LO 85 VOUT Output Current VOUT = 1.75V, VCC = 2.7V, VOUT < 10mV 2 VOUT Enable Time SHDN = LO to HI, CLOAD = 33pF, RLOAD = 2k VOUT Bandwidth CLOAD = 33pF, RLOAD = 2k (Note 4) VOUT Load Capacitance (Notes 6, 7) VOUT Slew Rate VRFIN = 1V Step, CLOAD = 33pF, RLOAD = 2k (Note 3) 3 V/s VOUT Noise VCC = 3V, Noise BW = 1.5MHz, 50 RF Input Termination 1 mVP-P 0.01 2 A 100 to 140 1 155 mV mV 4 8 mA s 20 2 MHz 33 pF VM Voltage Range 0 VCC - 1.8V V VM Input Current -0.5 0.5 A 0.35 V 36 A SHDN Voltage LO, Chip Disabled VCC = 2.7V to 6V SHDN Voltage HI, Chip Enabled VCC = 2.7V to 6V SHDN Input Current SHDN = 3.6V RFIN Input Frequency Range (Note 8) 1.4 V 22 300 to 7000 MHz -32 to 10 dBm RFIN Input Power Range RF Frequency = 300MHz to 7GHz (Note 5, 6) VCC = 2.7V to 6V RFIN AC Input Resistance F = 1000MHz, Pin = -25dBm 220 RFIN Input Shunt Capacitance F = 1000MHz, Pin = -25dBm 0.65 pF Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the -40C to 85C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: The rise time at VOUT is measured between 1.3V and 2.3V. Note 4: Bandwidth is calculated based on the 10% to 90% rise time equation: BW = 0.35/rise time. Note 5: RF performance is tested at 1800MHz Note 6: Guaranteed by design. Note 7: Capacitive loading greater than this value may result in circuit instability. Note 8: Higher frequency operation is achievable with reduced performance. Consult factory for more information. 5530f 2 LTC5530 U W TYPICAL PERFOR A CE CHARACTERISTICS Output Voltage vs Supply Voltage (RF Input Signal Off) 130 VOUT vs RF Input Power and VCC 1000MHz Supply Current vs Supply Voltage (RF Input Signal Off) 500 GAIN = 2 5600 GAIN = 2 TA = 85C 120 TA = 25C TA = -40C 115 480 460 TA = 25C 440 TA = 25C GAIN = 2 4800 VOUT OUTPUT VOLTAGE (mV) 125 SUPPLY CURRENT (A) VOUT OUTPUT VOLTAGE (mV) TA = -40C TA = 85C 4000 3200 2400 VCC = 6V VCC = 5V VCC = 4V VCC = 3V 1600 800 3.0 3.5 4.0 4.5 5.0 5.5 SUPPLY VOLTAGE VCC (V) 420 2.5 6.0 0 3.0 3.5 4.0 4.5 5.0 5.5 SUPPLY VOLTAGE VCC (V) Typical Detector Characteristics, 300MHz VOUT OUTPUT VOLTAGE (mV) VCC = 3.6V 3200 GAIN = 2 TA = 25C 1600 1200 TA = 85C 800 TA = -40C 2800 2400 TA = 25C 2000 1600 1200 TA = 85C 800 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 8 4 VOUT OUTPUT VOLTAGE (mV) VOUT OUTPUT VOLTAGE (mV) 1200 800 400 TA = 85C 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 5530 G07 TA = 85C 0 4 2400 Typical Detector Characteristics, 5000MHz VCC = 3.6V 3200 GAIN = 2 TA = -40C 2000 1600 8 3600 2800 TA = 25C 1200 800 400 8 800 5530 G06 VCC = 3.6V 3200 GAIN = 2 1600 1200 0 -32 -28 -24 -20 -16 -12 -8 -4 8 3600 VCC = 3.6V 3200 GAIN = 2 TA = 25C TA = 25C 1600 Typical Detector Characteristics, 4000MHz 3600 2000 2000 5530 G05 Typical Detector Characteristics, 3000MHz TA = -40C TA = -40C 2400 RF INPUT POWER (dBm) 5530 G04 2400 2800 400 400 400 VOUT OUTPUT VOLTAGE (mV) VOUT OUTPUT VOLTAGE (mV) 3600 VCC = 3.6V 3200 GAIN =2 2400 2800 Typical Detector Characteristics, 2000MHz 3600 VCC = 3.6V 3200 GAIN =2 2000 5530 G03 Typical Detector Characteristics, 1000MHz 3600 TA = -40C 8 12 5530 G02 5530 G01 2800 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) 6.0 VOUT OUTPUT VOLTAGE (mV) 110 2.5 TA = 85C 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 2800 2400 TA = -40C 2000 1600 TA = 25C 1200 800 TA = 85C 400 8 5530 G08 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 8 5530 G09 5530f 3 LTC5530 U W TYPICAL PERFOR A CE CHARACTERISTICS Typical Detector Characteristics, 6000MHz Typical Detector Characteristics, 7000MHz 3600 3600 2800 VCC = 3.6V 3200 GAIN = 2 VOUT OUTPUT VOLTAGE (mV) VOUT OUTPUT VOLTAGE (mV) VCC = 3.6V 3200 GAIN = 2 TA = -40C 2400 2000 TA = 25C 1600 1200 800 TA = 85C 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 2800 TA = -40C 2400 2000 TA = 25C 1600 1200 800 TA = 85C 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 8 5530 G10 Typical Detector Characteristics, 1000MHz 3600 VCC = 3.6V 3200 GAIN = 4 TA = -40C VOUT OUTPUT VOLTAGE (mV) VOUT OUTPUT VOLTAGE (mV) 3600 2800 2400 TA = 25C 2000 1600 1200 8 5530 G11 Typical Detector Characteristics, 300MHz VCC = 3.6V 3200 GAIN = 4 4 TA = 85C 800 400 0 -32 -28 -24 -20 -16 -12 -8 -4 RF INPUT POWER (dBm) 2800 2000 1600 4 5530 G12 TA = 25C 1200 800 400 0 TA = -40C 2400 TA = 85C 0 -32 -28 -24 -20 -16 -12 -8 -4 RF INPUT POWER (dBm) 0 4 5530 G13 5530f 4 LTC5530 U W TYPICAL PERFOR A CE CHARACTERISTICS 100 TA = -40C TA = 85C 10 100 TA = -40C TA = 85C 10 TA = 25C 1 -30 -25 1000 VCC = 3.6V GAIN = 2 VOUT SLOPE (mV/dB) 1000 VCC = 3.6V GAIN = 2 VOUT SLOPE (mV/dB) VOUT SLOPE (mV/dB) 1000 -20 -15 -10 -5 RF INPUT POWER (dBm) 1 -30 5 0 TA = 85C 10 TA = 25C -25 -20 -15 -10 -5 RF INPUT POWER (dBm) TA = 85C -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 5530 G16 1000 100 TA = -40C TA = 85C 10 VCC = 3.6V GAIN = 2 100 TA = -40C 10 TA = 85C TA = 25C -20 -15 -10 -5 RF INPUT POWER (dBm) 0 1 -30 -25 5 TA = 25C -20 -15 -10 -5 0 RF INPUT POWER (dBm) VOUT Slope vs RF Input Power 7000MHz 1000 VOUT SLOPE (mV/dB) VCC = 3.6V GAIN = 2 100 TA = -40C TA = 85C TA = 25C -20 -15 -10 -5 0 RF INPUT POWER (dBm) 5 5530 G19 5530 G18 VOUT Slope vs RF Input Power 6000MHz 1 -30 -25 1 -30 -25 5 -20 -15 -10 -5 0 RF INPUT POWER (dBm) 5530 G17 10 5 0 VOUT Slope vs RF Input Power 5000MHz VCC = 3.6V GAIN = 2 TA = 25C 1000 1 -30 5 0 VOUT SLOPE (mV/dB) VOUT SLOPE (mV/dB) TA = -40C VOUT SLOPE (mV/dB) VOUT SLOPE (mV/dB) 1000 100 -25 TA = -40C VOUT Slope vs RF Input Power 4000MHz VCC = 3.6V GAIN = 2 1 -30 100 5530 G15 VOUT Slope vs RF Input Power 3000MHz 10 VCC = 3.6V GAIN = 2 TA = 25C 5530 G14 1000 VOUT Slope vs RF Input Power 2000MHz VOUT Slope vs RF Input Power 1000MHz VOUT Slope vs RF Input Power 300MHz VCC = 3.6V GAIN = 2 100 10 TA = -40C TA = 85C TA = 25C 5 5530 G20 1 -30 -25 -20 -15 -10 -5 0 RF INPUT POWER (dBm) 5 5530 G21 5530f 5 LTC5530 U W TYPICAL PERFOR A CE CHARACTERISTICS RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25C) FREQUENCY (GHz) RESISTANCE () REACTANCE () 0.30 290.45 -136.22 0.50 234.41 -162.54 0.70 178.25 -170.53 0.90 137.31 -159.89 1.10 109.17 -147.57 1.30 86.30 -136.18 1.50 68.65 -121.74 1.70 57.48 -107.60 1.90 49.79 - 96.72 2.10 43.56 - 86.70 2.30 38.67 -77.91 2.50 34.82 -70.13 2.70 31.68 - 62.86 2.90 29.13 - 56.01 3.10 27.17 - 49.83 3.30 25.73 - 44.24 3.50 24.56 - 39.74 3.70 23.18 - 35.35 3.90 22.31 - 30.62 4.10 20.73 -26.88 4.30 19.88 -22.31 4.50 19.40 -18.23 4.70 19.05 -14.25 4.90 19.08 -10.21 5.10 19.55 - 6.30 5.30 20.85 - 2.84 5.50 21.94 -1.49 5.70 20.60 - 0.07 5.90 19.29 2.99 6.10 18.69 6.61 6.30 18.53 10.39 6.50 18.74 14.35 6.70 19.79 17.91 6.90 19.75 20.77 7.00 19.99 22.47 S11 Forward Reflection Impedance 5530 TA03 0.3000GHz-7.000GHz 5508 TA03 5530f 6 LTC5530 U W TYPICAL PERFOR A CE CHARACTERISTICS RFIN Input Impedance (Pin = -25dBm, VCC = 3.6V, TA = 25C) FREQUENCY (GHz) RESISTANCE () REACTANCE () 0.30 216.45 -76.47 0.50 190.63 -98.28 0.70 161.98 -112.03 0.90 133.17 -111.53 1.10 113.08 -109.05 1.30 94.55 -107.08 1.50 75.33 - 98.50 1.70 63.52 - 88.19 1.90 55.19 - 80.05 2.10 48.64 -72.23 2.30 43.73 - 64.81 2.50 39.71 - 58.31 2.70 36.47 - 52.27 2.90 33.69 - 46.77 3.10 31.61 - 41.25 3.30 29.78 -36.61 3.50 28.27 -32.39 3.70 26.63 -28.12 3.90 26.12 -23.97 4.10 24.20 -20.75 4.30 23.28 -16.69 4.50 22.60 -12.77 4.70 22.21 - 9.08 4.90 22.15 -5.24 5.10 22.61 -1.58 5.30 23.90 1.53 5.50 24.97 2.62 5.70 23.51 4.00 5.90 22.25 6.94 6.10 21.57 10.62 6.30 21.43 14.02 6.50 21.69 17.77 6.70 22.68 21.24 6.90 22.81 24.21 7.00 23.07 25.56 S11 Forward Reflection Impedance 5530 TA04 0.3000GHz-7.000GHz 5508 TA04 5530f 7 LTC5530 U U U PI FU CTIO S RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A coupling capacitor must be used to connect to the RF signal source. The frequency range is 300MHz to 7GHz. This pin has an internal 500 termination, an internal Schottky diode detector and a peak detector capacitor. ensure that the part is in shutdown when no input is applied. In shutdown VOUT is connected to ground via a 280 resistor. VM (Pin 4): Negative Input to Buffer Amplifier. VOUT (Pin 5): Detector Output. GND (Pin 2): Ground. SHDN (Pin 3): Shutdown Input. A logic low on the SHDN pin places the part in shutdown mode. A logic high enables the part. SHDN has an internal 160k pulldown resistor to VCC (Pin 6): Power Supply Voltage, 2.7V to 6V. VCC should be bypassed appropriately with ceramic capacitors. W BLOCK DIAGRA RFSOURCE VCC 6 BIAS SHUTDOWN 500 RFIN SD 1 + 500 BUFFER 5 VOUT 4 VM - 31k + 25pF 50A GND 2 180 RF DET 24k - SD SD 50A 100 40k 160k 3 5530 BD SHDN 5530f 8 LTC5530 U W U U APPLICATIO S I FOR ATIO Operation BANDWIDTH = The LTC5530 RF detector integrates several functions to provide RF power detection over frequencies ranging from 300MHz to 7GHz. These functions include an internal frequency compensated buffer amplifier, an RF Schottky diode peak detector and level shift amplifier to convert the RF input signal to DC and a delay circuit to avoid voltage transients at VOUT when powering up. The LTC5530 has both shutdown and gain setting capabilities. 4MHz RB = 4MHz * (GAIN) (RA + RB ) A capacitor can be placed across the feedback resistor RA to shape the frequency response. In addition the amplifier can be used as a comparator. VM can be connected to a reference voltage. When the internal detector voltage (which is connected to the positive input of the buffer amplifier) exceeds the external voltage of VM, VOUT will switch high. Buffer Amplifier RF Detector The output buffer amplifier is capable of supplying typically 4mA into a load. The negative terminal VM is brought out to a pin for gain selection. External resistors connected between VOUT and VM (RA) and VM to ground (RB) will set the amplifier gain. GAIN = 1 + The internal RF Schottky diode peak detector and level shift amplifier converts the RF input signal to a low frequency signal. The detector demonstrates excellent efficiency and linearity over a wide range of input power. The Schottky diode is biased at about 55A and drives a 25pF internal peak detector capacitor. RA RB Shutdown The amplifier is unity gain stable; however a minimum gain of two is recommended to improve low output voltage accuracy. The amplifier bandwidth is 2MHz for a gain of 2. The part is in shutdown mode when SHDN is low. The supply current is reduced to < 2A and VOUT is shorted to ground via a 280 resistor. When SHDN is asserted high, the part is enabled after about 8s. For increased gain applications, the bandwidth is reduced according to the formula: Demo Board Schematic VCC 2.7V TO 6V RFIN VCC SHDN C4 39pF C1 0.1F LTC5530ES6 1 R1 (OPT) 2 R2 22k 3 RFIN VCC GND VOUT SHDN VM 6 C2 100pF 5 4 R3 10k VOUT C3 (OPT) R4 10k 5530 DB 5530f 9 LTC5530 U W U U APPLICATIO S I FOR ATIO Applications The LTC5530 can be used as a self-standing signal strength measuring receiver for a wide range of input signals from -32dBm to 10dBm for frequencies from 300MHz to 7GHz. Operation at higher frequencies is achievable. Consult factory for more information. The LTC5530 can be used as a demodulator for AM and ASK modulated signals with data rates up to 2MHz. Depending on specific application needs, the RSSI output can be split between two branches, providing AC-coupled 0.1F LTC5530ES6 1 2 3 DISABLE ENABLE RFIN VCC GND VOUT SHDN VM data (or audio) output and DC-coupled RSSI output for signal strength measurements and AGC. The LTC5530 can be used for RF power detection and control. Figure 1 is an example of transmitter power control, using the LTC5530 with a capacitive tap to the power amplifier. A 0.5pF capacitor (C1) followed by a 200 resistor (R1) forms a coupling circuit with about 20dB loss at 900MHz referenced to the LTC5530 RF input pin. In the actual product implementation, component values for the capacitive tap may be different depending on parts placement, PCB parasitics and parameters of the antenna. Li-Ion Tx PA MODULE R1 200 1% C1 0.5pF 0.05pF CELL BAND 6 DIPLEXER 5 4 PCS BAND R2 R3 MOBILE PHONE DSP VPC BSE 5530 F01 Figure 1. Mobile Phone Tx Power Control Application with a Capacitive Tap 5530f 10 LTC5530 U PACKAGE DESCRIPTIO S6 Package 6-Lead Plastic TSOT-23 (Reference LTC DWG # 05-08-1636) 0.62 MAX 2.90 BSC (NOTE 4) 0.95 REF 1.22 REF 3.85 MAX 2.62 REF 1.4 MIN 2.80 BSC 1.50 - 1.75 (NOTE 4) PIN ONE ID RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR 0.30 - 0.45 6 PLCS (NOTE 3) 0.95 BSC 0.80 - 0.90 0.20 BSC 0.01 - 0.10 1.00 MAX DATUM `A' 0.30 - 0.50 REF 0.09 - 0.20 (NOTE 3) 1.90 BSC S6 TSOT-23 0302 NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. JEDEC PACKAGE REFERENCE IS MO-193 5530f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LTC5530 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS Infrastructure LT5511 High Linearity Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5512 DC-3GHz High Signal Level Downconverting Mixer DC to 3GHz, 21dBm IIP3, Integrated LO Buffer LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 20dBm IIP3, Integrated LO Quadrature Generator LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3, Integrated LO Quadrature Generator LT5517 40MHz to 900MHz Direct Conversion Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3, 50 Single Ended RF and LO Ports LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3, 50 Single Ended RF and LO Ports LT5522 600MHz to 2.7GHz High Linearity Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50 Single-Ended RF and LO Ports RF Power Detectors LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply LTC(R)5505 300MHz to 3GHz RF Power Detectors LTC5505-1: -28dBm to 18dBm Range, LTC5505-2: -32dBm to 12dBm Range, Temperature Compensated, 2.7V to 6V Supply LTC5507 100kHz to 1000MHz RF Power Detector -34dBm to 14dBm Range, Temperature Compensated, 2.7V to 6V Supply LTC5508 300MHz to 7GHz RF Power Detector -32dBm to 12dBm Range, Temperature Compensated, SC70 Package LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Temperature Compensated, SC70 Package LTC5531 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control and Shutdown LTC5532 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset RF Building Blocks LT5500 1.8GHz to 2.7GHz Receiver Front End 1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer LT5502 400MHz Quadrature IF Demodulator with RSSI 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range LT5503 1.2GHz to 2.7GHz Direct IQ Modulator and Upconverting Mixer 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth LT5506 500MHz Quadrature IF Demodulator with VGA 1.8V to 5.25V Supply, 40MHz to 500MHz IF, -4dB to 57dB Linear Power Gain, 8.8MHz Baseband Bandwidth LT5546 500MHz Ouadrature IF Demodulator with VGA and 17MHz Baseband Bandwidth 17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V Supply, -7dB to 56dB Linear Power Gain RF Power Controllers LTC1757A RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1758 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1957 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC4400 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW LTC4401 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW LTC4403 RF Power Controller for EDGE/TDMA Multiband GSM/GPRS/EDGE Mobile Phones, 250kHz Loop BW 5530f 12 Linear Technology Corporation LT/TP 0304 1K * PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507 www.linear.com LINEAR TECHNOLOGY CORPORATION 2004