VS-1EFH02HM3
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Hyperfast Rectifier, 1 A FRED Pt®
DESIGN SUPPORT TOOLS
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Wave and reflow solderable
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop and
hyperfast recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber boost,
lighting, piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
Note
(1) Device on PCB with 8 mm x 16 mm soldering lands
PRIMARY CHARACTERISTICS
IF(AV) 1 A
VR200 V
VF at IF (typ. 125 °C) 0.74 V
trr 25 ns
TJ max. 175 °C
Package SMF (DO-219AB)
Circuit configuration Single
Top view Bottom view
SMF (DO-219AB)
eSMP® Series
Cathode Anode
click logo to get started
Available
Models
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage VRRM 200 V
Average rectified forward current IF(AV) TC = 160 °C (1) 1A
Non-repetitive peak surge current IFSM TJ = 25 °C 35
Operating junction and storage temperature range TJ, TStg -65 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage VBR, VRIR = 100 μA 200 - -
V
Forward voltage VF
IF = 1 A - 0.87 0.93
IF = 1 A, TJ = 125 °C - 0.74 0.8
Reverse leakage current IR
VR = VR rated - - 2 μA
TJ = 125 °C, VR = VR rated - 0.5 8
Junction capacitance CTVR = 200 V - 5 - pF
VS-1EFH02HM3
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 24 -
ns
IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 25
TJ = 25 °C
IF = 1 A
dIF/dt = 200 A/μs
VR = 160 V
-16-
TJ = 125 °C - 23 -
Peak recovery current IRRM
TJ = 25 °C - 1.6 - A
TJ = 125 °C - 2.5 -
Reverse recovery charge Qrr
TJ = 25 °C - 13 - nC
TJ = 125 °C - 30 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range TJ, TStg -65 - +175 °C
Thermal resistance, junction to case RthJC
Device mounted on PCB with 8 mm x 16 mm
soldering lands --17°C/W
Thermal resistance, junction to ambient RthJA
Device mounted on PCB with 2 mm x 3.5 mm
soldering lands - - 140 °C/W
Approximate weight 0.015 g
0.0005 oz.
Marking device Case style SMF (DO-219AB) MDH
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
IF- Instantaneous Forward Current (A)
VF- Forward Voltage Drop (V)
TJ= 125 °C
TJ= 25 °C
TJ= 175 °C
TJ= 150 °C
V
R
-
Reverse Voltage (V)
I
R
- Reverse Current (μA)
0.001
0.01
0.1
1
10
100
050100150200
25 °C
125 °C
150 °C
175 °C
VS-1EFH02HM3
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Revision: 10-Aug-2018 3Document Number: 95786
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
1
10
100
050100150200
CT- Junction Capacitance (pF)
VR- Reverse Voltage (V)
150
155
160
165
170
175
180
0 0.2 0.4 0.6 0.8 1 1.2
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
Square wave (D = 0.50)
80 % rated VRapplied
See note (1)
DC
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0
0.3
0.6
0.9
1.2
0 0.3 0.6 0.9 1.2 1.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
10
15
20
25
30
35
40
100 1000
Qrr (nC)
dIF/dt (A/μs)
125 °C
25 °C
VS-1EFH02HM3
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Revision: 10-Aug-2018 4Document Number: 95786
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Fig. 8 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-1EFH02HM3/I 10 000 10 000 13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95572
Part marking information www.vishay.com/doc?95618
Packaging information www.vishay.com/doc?95577
SPICE model www.vishay.com/doc?96012
Q
rr
0.5 I
RRM
di
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
di
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
2- Current rating (1 = 1 A)
3- Circuit conguration:
4- F = SMF package
5- Process type,
H = hyperfast recovery
6- Voltage code (02 = 200 V)
- H = AEC-Q101 qualied
7
- M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
8
Device code
51 32 4 6 87
VS-1 E F H02 M3H
1-Vishay Semiconductors product
E = single diode
Outline Dimensions
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Revision: 16-Apr-18 1Document Number: 95572
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SMF (DO-219AB)
DIMENSIONS in millimeters (inches)
Foot print recommendation:
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
1.3 (0.051) 1.3 (0.051)
2.9 (0.114)
1.4 (0.055)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.85 (0.033)
0.35 (0.014)
1.2 (0.047)
0.8 (0.031)
1.9 (0.075)
1.7 (0.067)
1.08 (0.043)
0.88 (0.035)
0.25 (0.010)
0.10 (0.003)
0.1 (0.004)
0 (0.000)
5
5
Created - Date: 15. February 2005
17247
Detail Z
enlarged
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Revision: 08-Feb-17 1Document Number: 91000
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