TQS - COMPANY PROPRIETARY INFORMATION SPEC TITLE: CLY2 DATASHEET REV DATE ECN# A 10-16-03 22355 B 12-06-04 27162 SPEC. NO: DAT.CLY2 REV: B PAGE 1 OF 9 REVISION HISTORY DESCRIPTION OF CHANGE New release of CLY2 datasheet (formerly DAT.057 rev D) ; also replaced S-PAR & noise match tables, p. 6 & 7 ; replaced output charasteristics tables, p. 5 ; by R. Hamilton. Updated to reflect Ver 1.8, March 4, 2004; revised package name to MW6, p.1; deleted 5V electrical characteristics, p. 7; by M. Rensfeldt Internal Web Site? No External Web Site? Yes No Yes MSW CONTROLLED DISTRIBUTION: 03 NOTE: UNLESS STAMPED WITH A RED "CONTROLLED " STAMP AND STATION NUMBER, THIS IS AN UNCONTROLLED COPY AND WILL NOT BE UPDATED CONFIRM THAT IT IS CURRENT BEFORE USING. CLY2 Datasheet High-Power Packaged GaAs FET Description: The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its easy matching and excellent linearity. The CLY2 exhibits +23.5 dBm output power with +3V Vds at 1.8 GHz with an associated gain of 14.5 dB. Power added efficiencies to 55% are achievable. Features: * For frequencies up to 3 GHz * Wide operating voltage range: 2 to 6 V Applications: * Power Amplifiers for WLAN transceivers * Driver Amplifiers for WLAN or mobile phone basestations * Low Noise Amplifier for basestations and antenna amplifiers Package Outline, MW6: 4 5 6 * POUT 23.5 dBm typical at VD=3V, f=1.8GHz * High efficiency: better than 55 % * Nfmin 0.79 dB typical at 900 MHz 3 2 1 * Low Cost Pin Configuration: 1 & 6: Gate 2 & 5: Source 3 & 4: Drain For further information, please visit www.triquint.com Ver 1.8; March 4th, 2004 pg. 2/9 CLY2 Datasheet Maximum Ratings: Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Symbol Values Unit VDS VDG 9 V 12 V -6 V 600 mA VGS ID Drain current Channel temperature 150 C Storage temperature TCh Tstg -55...+150 C Total power dissipation (Ts < 50 C) 1) Ptot 900 mW RthChS 110 K/W Thermal Resistance Channel-soldering point 1) 1) Ts: Temperature at soldering point Electrical Specifications: (TA = 25C , unless otherwise specified) Parameter Symbol min typ max Unit IDSS 300 450 650 mA ID - 5 50 A IG - 5 20 A VGS(p) -3.8 -2.8 -1.8 V G - 15.5 - dB G - 14.5 - dB Po 22.5 23.5 - dBm Drain-source saturation current VDS = 3 V VGS = 0 V Drain-source pinch-off current VDS = 3 V VGS = -3.8 V Gate pinch-off current VDS = 3 V VGS = -3.8 V Pinch-off Voltage VDS= 3 V ID=50A Small Signal Gain*) VDS = 5 V ID = 180 mA Pin = -5 dBm f = 1.8 GHz Small Signal Gain*) VDS = 3 V ID = 180 mA Pin = -5 dBm f = 1.8 GHz Output Power VDS = 3 V ID = 180 mA Pin = 10 dBm f = 1.8 GHz For further information, please visit www.triquint.com Ver 1.8; March 4th, 2004 pg. 3/9 CLY2 Datasheet Electrical Specifications, Continued: 1dB-Compression Point VDS = 3 V ID = 180 mA ID = 180 mA - 23.5 - dBm P1dB - 27.0 - dBm PAE - 55 - % f = 1.8 GHz 1dB-Compression Point VDS = 5 V P1dB f = 1.8GHz Power Added Efficiency VDS = 3 V ID = 180 mA Pin = 10 dBm f = 1.8 GHz Noise figure VDS = 3 V ID = 180 mA NF 1.48 dB f = 1.8GHz *) Matching conditions for maximum small signal gain (not identical with power matching conditions!) **) Power matching conditions: f=1.8GHz: Source Match: ms: MAG = 0.74, ANG 132; Load Match: ml: ;MAG 0.61, ANG -153 For further information, please visit www.triquint.com Ver 1.8; March 4th, 2004 pg. 4/9 CLY2 Datasheet Electrical Characteristics, Continued: Output characteristics: 0.50 0.45 Draincurrent [A] 0.40 VG=0 V VG=-0,5V VG=-1,0V VG=-1,5V VG=-2V VG=-2,5V Ptot DC 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 1 2 3 4 5 Drain-Source Voltage [V] 6 7 Compression Power vs. Drain-Source Voltage f = 1.8GHz; IDS = 0.5 Idss P1dB D 40 [dBm] 35 80 [%] 70 30 60 25 50 20 40 15 30 10 20 5 10 0 0 0 1 2 3 4 5 [V] 6 Drain-Source Voltage For further information, please visit www.triquint.com Ver 1.8; March 4th, 2004 pg. 5/9 CLY2 Datasheet Electrical Characteristics, Continued: Typical Common Source S-Parameters and noise data VDS = 3 V Zo = 50 ID = 180 mA Freq. [GHz] |S11|