Single Diode Schottky Barrier Diode Msi OUTLINE D1 amg 74 Package : 1F Unit!mm Weight 0.058(Typ) wKe9 40V 2A [ate fs oe e /)\@SMD Small SMD 2 4 {i 1R=0.2MA Low In=0.2mA anole FTE SECT LICL) Resistance for thermal run-away Type No. Date cocle ent vFYIRR Switching Regulator eDC/DCIYI\-F DC/DC Converter RS, /,, OARS Home Appliance, Game, Office Automation ifs. h J )L4RZS = Communication, Portable set UTD PBN LOU TIL Web 4 b MIS CRAKE) & COBH Favs, lI Ove RAR CMR F So. For details of the outline dimensions, refer to our web site or Semiconductor Short Form Catalog. As for the marking, refer to the specification "Marking, Terminal Connection". Mew RATINGS @xtRAZH Absolute Maximum Ratings (hee TI=25C) H we | Az ff ih Bf Item Symboll conditions Type No. DIFJ4 Unit (RAF ANE a 9 Storage Temperature Tstg 55~ 150 C Tey bike . 9 Operation Junction Temperature Tj 150 Cc +f A SLE 7 Maximum Reverse Valtage Va 40 \ pacar 7 > bE Tas G2 6p glass-epoxy substrate 1.0 eb ttt I 5OHz Iai, We iy Ta=4sc 2 SPREE 15 A Average Rectified Forward Current 0 50Hz sine wave, Resistance load ans On alumina substrate - + Ti=117C 20 a A MTR i 50Hz Esk, JRA OR LIA 2 eat AA, Ti = 25 50 A Peak Surge Forward Current M 50Hz sine wave, Non-repetitive 1 cycle peak value, T)j=25C @B RA - AHH Electrical Characteristics (HOM T/=25C) ee Ab ASE WARE Vr Ir=1.5A, pulse measurement MAX 0.57 V Forward Voltage = pay AAW Ir=2.0A; Biles measurement MAX 0.61 CA te a 2 Fe ! Reverse Current Tr Vr=VRM, pulse measurement MAX 0.2 mA fr Feit : IMU = 1W9V aseon Capacitance Cj | f= 1MHz, Ve= 10V TYP 96 pF * deeb: FM jl Junction to lead MAX 23 STL TS THEME fl Thermal Resistance * JE rh HAI On alumina substrate MAX 108 C/W Bia Junction to ambient Ty ba MAX 157 On glass-epoxy substrate 5 54 (lesae4) www.shindengen.co.jp/product/semil Single SBD Small SMD D1FJ4 Mist CHARACTERISTIC DIAGRAMS NES Tel HE NEF 7738 thee PAYOR Ti it Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability pe of lo 2 . Sine wave z 3 Af 5 : 2 Wms Wms: s a E Teyele & S 5 Non-repetitive . 3 E nee C ] 5 TH 1aTC(MAX) 3 3 i 5 T= IC(TYP) a iC o TI= 25C(MAX) 5 2 z T= 29C(TYP) 2 6 s f ce 3 z oo te a 2 2 i) a 5 3 [Pulse measurement) a of Forward Voltage Vr (V] Average Rectified Forward Current lo (A) Number of Cycles (cycle) Ate RAB A RR EeSaH Reverse Current Reverse Power Dissipation Junction Capacitance zt At | =|) = ce i : petae : oat = i ary ee hebuedeel : whoa rot P yas uw - _ D=tp/T i < | | & oA 7 Ss = o ~ a 2 al & 2 5 2 g 5 ay Qo g Oo 5 & 2 + T= SOC(TYP) 5 Z S000) Bs 2 2 To T= 25C(TYP) 2 Ol 5 oom! 2 2 nz Pulse measurement} Reverse Voltage Ver (V) Reverse Voltage Vr [V) Reverse Voltage Ver (V) F4LF4+vINT Ta-lo F4lF4yvINT Ta-lo F4lF4YIN-FJ Trlo Derating Curve Ta-lo Derating Curve Ta-lo Derating Curve T/-lo ozde=~d=-Eb 4 oT -TLIve E gcebf=stolo 8 v [ve | Vr=20V itp -; 7 ~, D=1p/T ~ On alumina substrate Average Rectified Forward Current Io [A) Average Rectified Forward Current Io (A) Average Rectified Forward Current Io (A) Ambient Temperature Ta (C) Ambient Temperature Ta [C] Lead Temperature Ti (C) * Sine wave (50Hz TH L TVET. * SOHz sine wave is used for measurements. + ERRORS MAI YP eho TB) ET. Typical SHAME KN Se RLTWET, * Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. www.shindengen.co.jp/product/semi/ (J532-1) 35