NPN SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR 3N74 3N76 3N77 N78 3N79 LOW LEAKAGE e 230 MAX 198 = .005 e LOW Ceb 1S MAK 700 + .005 @ LOW reg (sat) e HIGH Vee & Ves 1.5 MIN ELECTRICAL DATA ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL 3N/74/75/76 3N/77/78/79 UNITS Collector To Base Voitage BVcso 50 40 Vv joe or v Emitter (1) To Base Valtage BVe ,Bo 18 12 v eae Emitter (2) To Base Voltage BVeE,60 18 12 v ges 0502 .008 Emitter To Emitter Voltage BVe | 20 18 12 v Emitter (1) To Collector Voltage | BVE,CO 18 12 v a Emitter (2) To Collector Voltage | BVE 3CO 18 12 v Woe Conector Current Ic 20 20 mA a ed EMITTER #2 DC Base Currant Is 20 20 mA 083 MAX DC Emitter Current le 10 10 mA Cotiector Connected to Case All Dimensions in Inches & D Power Diss @ 25 C Ambient Po 200mW Derating ..7mw/ Cc Junction Temp. (Oper. & Store} Ta S 65 C to +200C & Lead Temp. (1/167 1/32" from, TT. 230 C for 10 sec. ELECTRICAL CHARACTERISTICS: Ta = 25C (uNLess OTHERWISE STATED} 3N74 3N75 3N76 3N77 3N78 3n79 eee ee OO Min] Macs {Min. | Max. [Min.| Max. | Min, | Max. [Min. | Max. [Min. | Max. | UNITS Offaeat Voltage Ve E70 | Is = 1.0mA, Temp: -28 C, +c, 100C | - 50, - | too] - | 200) - 80 yoo] - | 200] av Offset Voltage Change OVE, 20| Ie = 1.0mA, Temp: 95C 10+ 100C = ys} | 128] - | 175) 76) | 125] - 175) av Offset Voltage Changs 2Me,:0| la: 0.5mA to -1.5mA = 26 25/ -- 5O; 25) - 50; - 76] uv Saturation Resistance re\e in = t.0ma = vE2t00| je ate, = 100ua 1KC 10 40) 10 40} 10 50] 10 50] 10 50| 10 60] Ohms inter: le,po | Ves -5V Emitter-Base Leakage Current le,80 Vee = 15V (3N74~76) - ah - ay- 2] - SI - S|} - 10) nA i i Vee = 5V Ve = 0 (Sh Emitter-Emitter Leakage Current | le120 | Yee <2 1BV pa ce - | # 2 so] - | ts} - | ae] - | ft] Emitter Emitter Leakage Current | le,20 | Temp: 100C ~ tstool [+100] - | st00] - | #100] - | +100 +200] 1a Collector-Bate Leakage Current Icso | Voce ~ 30v, le, = le, = 0 - 1} ~ tO} - 10} - wl - to} - 20| nA ' ee = | 310 - | . B=8V Emitter To Base Capacitance Cor Hen 6 f= 140K - s| - 5| - 5 30 3.0 30 | fd Collector To Base Capacitance Cov ven ey. 9 t= 140Ke Bl - al - 8 wo} - 10 10] ofa Vcr = 5V a Ty Forward Current Gain hte ic IMA, t = 20MC 15 15 16, - 15 - 15 S 1.5 CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779