2SD468 Silicon NPN Epitaxial REJ03G0766-0200 (Previous ADE-208-1135) Rev.2.00 Aug.10.2005 Application * Low frequency power amplifier * Complementary pair with 2SB562 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Symbol VCBO VCEO VEBO IC iC(peak) Ratings 25 20 5 1.0 1.5 Unit V V V A A Collector power dissipation Junction temperature Storage temperature PC Tj Tstg 0.9 150 -55 to +150 W C C Rev.2.00 Aug 10, 2005 page 1 of 5 2SD468 Electrical Characteristics (Ta = 25C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Cob Notes: 1. The 2SD468 is grouped by hFE as follows. 2. Pulse test B C 85 to170 120 to 240 Rev.2.00 Aug 10, 2005 page 2 of 5 Min 25 20 5 -- 85 -- -- -- -- Typ -- -- -- -- -- 0.2 0.79 190 22 Max -- -- -- 1.0 240 0.5 1.0 -- -- Unit V V V A V V MHz pF Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 2 V, IC = 0.5 A*2 IC = 0.8 A, IB = 0.08 A*2 VCE = 2 V, IC = 0.5 A*2 VCE = 2 V, IC = 0.5 A*2 VCB = 10 V, IE = 0, f = 1 MHz 2SD468 Main Characteristics Typical Output Characteristics 1,000 1.2 Collector Current IC (mA) Collector Power Dissipation PC (W) Maximum Collector Dissipation Curve 0.8 0.4 50 C 600 = 0. 9 5 W 4 3 400 2 200 1mA 0 150 100 0.4 0.8 1.2 1.4 1.6 Ambient Temperature Ta (C) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics DC Current Transfer Ratio vs. Collector Current 5,000 1,000 DC Current Transfer Ratio hFE VCE = 2 V 300 25C Ta = 75C 100 30 10 3 1 VCE = 2 V 2,000 1,000 500 200 Ta = 75C 100 25C 50 20 10 5 0 0.2 0.4 0.6 0.8 1.0 1 Collector to Emitter Saturation Voltage vs. Collector Current IC = 10 IB 0.20 0.15 0.10 0.05 Ta = 75C 25C 0 1 3 10 30 100 300 1,000 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 10 30 100 300 1,000 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) 0.25 3 Collector Current IC (mA) Base to Emitter Voltage VBE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) P 6 IB = 0 0 Collector Current IC (mA) 7 800 300 VCE = 2 V 200 100 0 10 30 100 300 Collector Current IC (mA) 1,000 2SD468 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 200 f = 1 MHz IE = 0 100 50 20 10 5 1 2 5 10 20 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 50 2SD468 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 0.4 Unit: mm 2.3 Max 0.65 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 0.5 3.8 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name 2SD468BTZ-E 2SD468CTZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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