BSS8402DW
Document number: DS30380 Rev. 23 - 2
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www.diodes.com
October 2019
© Diodes Incorporated
BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
BVDSS
RDS(ON) Max
ID
TA = +25°C
Q1
60V
13.5 @ VGS = 10V
115mA
Q2
-50V
10 @ VGS = -5V
-130mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The BSS8402DWQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: SOT363
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Part Number
Compliance
Case
Packaging
BSS8402DW-7-F
Standard
SOT363
3,000/Tape & Reel
BSS8402DW-13-F
Standard
SOT363
10,000/Tape & Reel
BSS8402DWQ-7
Automotive
SOT363
3,000/Tape & Reel
BSS8402DWQ-13
Automotive
SOT363
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2003
2004
2005
2006
~
2018
2019
2020
2021
2022
2023
2024
2025
2026
Code
P
R
S
T
~
F
G
H
I
J
K
L
M
N
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT363
Top View
Top View
Internal Schematic
S
2
D
2
Q1Q2
D
1
S
1
G
2
G
1
e3
KNP = Product Type Marking Code
YM or YM= Date Code Marking
Y or Y = Year (ex: G = 2019)
M = Month (ex: 9 = September)
BSS8402DW
Document number: DS30380 Rev. 23 - 2
2 of 8
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October 2019
© Diodes Incorporated
BSS8402DW
Maximum Ratings Total Device (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
200
mW
Thermal Resistance, Junction to Ambient
RθJA
625
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Maximum Ratings N-CHANNEL Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS 1.0M
VDGR
60
V
Gate-Source Voltage Continuous
Pulsed
VGSS
±20
±40
V
Drain Current (Note 5) Continuous
Continuous @ +100°C
Pulsed
ID
115
73
800
mA
Maximum Ratings P-CHANNEL Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-50
V
Drain-Gate Voltage RGS 20K
VDGR
-50
V
Gate-Source Voltage Continuous
VGSS
20
V
Drain Current (Note 5) Continuous
ID
-130
mA
Note: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Incorporated’s suggested pad layout document,
which can be found on our website at http://www.diodes.com/package-outlines.html.
BSS8402DW
Document number: DS30380 Rev. 23 - 2
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October 2019
© Diodes Incorporated
BSS8402DW
Electrical Characteristics N-CHANNEL Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
60
70
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current @ TC = +25°C
@ TC = +125°C
IDSS
1.0
500
µA
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
±10
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(TH)
1.0
2.5
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance @ TJ = +25°C
@ TJ = +125°C
RDS(ON)
3.2
4.4
7.5
13.5
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current
ID(ON)
0.5
1.0
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
gFS
80
mS
VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
22
50
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
11
25
pF
Reverse Transfer Capacitance
Crss
2.0
5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
7.0
20
ns
VDD = 30V, ID = 0.2A,
RL = 150, VGEN = 10V, RGEN = 25
Turn-Off Delay Time
tD(OFF)
11
20
ns
Electrical Characteristics P-CHANNEL Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
-50
V
VGS = 0V, ID = -25A
Zero Gate Voltage Drain Current
IDSS

-1
-2
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = +25°C
VDS = -50V, VGS = 0V, TJ = +125°C
VDS = -25V, VGS = 0V, TJ = +25°C
Gate-Body Leakage
IGSS
10
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(TH)
-0.8
-2.0
V
VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance
RDS(ON)
10
VGS = -5V, ID = -0.100A
Forward Transconductance
gFS
0.05
S
VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
45
pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
25
pF
Reverse Transfer Capacitance
Crss
12
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
10
ns
VDD = -30V, ID = -0.27A,
RGEN = 50, VGS = -10V
Turn-Off Delay Time
tD(OFF)
18
ns
Note: 6. Short duration pulse test used to minimize self-heating effect.
BSS8402DW
Document number: DS30380 Rev. 23 - 2
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October 2019
© Diodes Incorporated
BSS8402DW
N-CHANNEL 2N7002 Section
0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 On-Region Characteristics
DS
I , DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
0 0.2 I , DRAIN CURRENT (A)
Figure 2 On-Resistance vs. Drain Current
D
T = 25 C
j°
6
7
0.4 0.6 0.8 1.0
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
1.0
1.5
2.0
2.5
3.0
-55 -30 -5 20 45 70 95 120 145
T , JUNCTION TEMPERATURE ( C)
Figure 3 On-Resistance vs. Junction Temperature
J°
V = 10V,
IGS
D = 200mA
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
V , GATE TO SOURCE VOLTAGE (V)
Figure 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
0 2 4 6 8 10 12 14 16 18
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
2
1
4
3
0 0.2 0.4 0.6 0.8 1
V GATE-SOURCE CURRENT (V)
GS,
I , DRAIN CURRENT (A)
Figure 5 Typical Transfer Characteristics
D
6
5
8
7
10
9V = 10V
DS
0
50
100
150
200
250
025 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE ( C)
Figure 6 Max Power Dissipation vs. Ambient Temperature
A°
BSS8402DW
Document number: DS30380 Rev. 23 - 2
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October 2019
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BSS8402DW
P-CHANNEL BSS84 Section
0
-600
-500
-400
-300
-200
-100
0-2-1 -5-4-3
I , DRAIN-SOURCE CURRENT (mA)
D
V , DRAIN-SOURCE (V)
DS
Figure 9 Drain-Source Current vs. Drain-Source Voltage
T = 25 C
A°
-0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0-2 -3 -4-1 -8-7
-6
-5
I , DRAIN CURRENT (A)
D
V , GATE-TO-SOURCE VOLTAGE (V)
GS
Figure 10 Drain Current vs. Gate-Source Voltage
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(
T
H
)
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Junction Temperature
J
VGS(TH), GATE THRESHOLD VOLTAGE (V)
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 7 Typical Drain-Source Leakage Current vs. Voltage
I
,
D
R
A
I
N
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(
n
A
)
D
S
S
1000
5
10
15
20
25
30
35
40
45
50
55
60
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
100
10
1
IDSS, DRAIN LEAKAGE CURRENT (nA)
0
1
2
4
5
3
6
8
7
10
9
0-1 -2 -3 -4 -5
V , GATE TO SOURCE (V)
Figure 11 On-Resistance vs. Gate-Source Voltage
GS
T = 25 C
A °
T = 125 C
A°
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
3
6
9
12
15
-50 -25 025 50 12510075 150
T , JUNCTION TEMPERATURE (
)
Figure 12 On-Resistance vs. Junction Temperature
J
V = -10V
I = -0.13A
GS
D
R , ON-RESISTANCE ( )
DS
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
C)
BSS8402DW
Document number: DS30380 Rev. 23 - 2
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© Diodes Incorporated
BSS8402DW
0.0
5.0
10.0
-0.0 -0.2 -0.4 -0.6 -0.8 1.0
I , DRAIN CURRENT (A)
Figure 13 On-Resistance vs. Drain Current
D
15.0
20.0
25.0
V = -8V
GS
V = -10V
GS
V = -3V
GS
V = -3.5V
GS
V = -4V
GS V = -6V
GS
V = -5V
GS
R , ON-RESISTANCE ( )
DS
-
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(
T
H
)
T , JUNCTION TEMPERATURE (°C)
Figure 15 Gate Threshold Variation vs. Junction Temperature
J
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 14 Typical Drain-Source Leakage Current vs. Voltage
-
I
,
D
R
A
I
N
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(
n
A
)
D
S
S
1000
5
10
15
20
25
30
35
40
45
50
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
100
10
1
-IDSS, DRAIN LEAKAGE CURRENT (nA)
BSS8402DW
Document number: DS30380 Rev. 23 - 2
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© Diodes Incorporated
BSS8402DW
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
SOT363
Dim
Min
Max
Typ
A1
0.00
0.10
0.05
A2
0.90
1.00
0.95
b
0.10
0.30
0.25
c
0.10
0.22
0.11
D
1.80
2.20
2.15
E
2.00
2.20
2.10
E1
1.15
1.35
1.30
e
0.650 BSC
F
0.40
0.45
0.425
L
0.25
0.40
0.30
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
Dimensions
Value
(in mm)
C
0.650
G
1.300
X
0.420
Y
0.600
Y1
2.500
e
D
L
E1
b
E
F
A2
A1
ca
Y1 G
Y
X
C
BSS8402DW
Document number: DS30380 Rev. 23 - 2
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October 2019
© Diodes Incorporated
BSS8402DW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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