Centra i . CMSD2004S Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMSD2004S type is a silicon switching diode manufactured by mini the epitaxial planar process, designed for applications requiring high voltage capability. SOT-323 CASE The following configurations are available: CMSD2004S DUAL, IN SERIES MARKING CODE: B6D MAXIMUM RATINGS (TA=25C) SYMBOL UNITS Continuous Reverse Voltage VR 240 V Peak Repetitive Reverse Voltage VRRM 300 V Peak Repetitive Reverse Current lo 200 mA Continuous Forward Current IF 225 mA Peak Repetitive Forward Current lFRM 625 mA Forward Surge Current, tp=1 ps IFSM 4000 mA Forward Surge Current, tp=1s IFSM 1000 mA Power Dissipation Pp 250 mW Operating and Storage Junction Temperature TJ. Tstg -65 to +150 C Thermal! Resistance OJA 500 C/W ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNIT BVR {R=100LnA 300 Vv IR VR=200V - nA IR VR=200V, Ta=150C - pA IR VR=240V 100 nA IR VR=240V, Ta=150C 100 LA VF IF=100mA 1.0 Vv CT VR=0, f=1 MHz 5.0 pF ter IF=IR=30mA, RECOV. TO 3.0mA,RL=1002 50 ns 280 Ali dimensions in inches (mm). -003(0.08) -006(0.15} tH i _* -004(0.10) MAX |MUM 4 TOP VIEW .063(1.80) .087(2.22) f..04711.19) ] .004(0.10) ; .055(1.40), o10(0.25) | I | : .079(2.00) ' .045(1.14) .087(2.22) | .083(1.35) .008(0,20) .031(0.79) 7016(0.41) -039(1.00) LEAD CODE ot Ee Ai, C2 281 R3 DATA SHEET