Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS -20V
▼ Small Package Outline RDS(ON) 52mΩ
▼ Surface Mount Device ID- 4.2A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-amb Maximum Thermal Resistance, Junction-ambient390 ℃/W
Data and specifications subject to change without notice 1
AP2317GN-HF
Rating
- 20
+ 8
-4.2
Halogen-Free Product
200809021
Continuous Drain Current3-3.4
Pulsed Drain Current1-16
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
-55 to 150
1.38
-55 to 150
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
D
G
S
SOT-23
AP2317GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=-4.5V, ID=-4A - - 52 mΩ
VGS=-2.5V, ID=-3A - - 65 mΩ
VGS=-1.8V, ID=-1A - - 90 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.3 - -1 V
gfs Forward Transconductance VDS=-5V, ID=-4A - 7 - S
IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=55oC) VDS=-16V, VGS=0V - - -10 uA
IGSS Gate-Source Leakage VGS= + 8V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=-4A - 13 21 nC
Qgs Gate-Source Charge VDS=-10V - 1.8 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 4.7 - nC
td(on) Turn-on Delay Time2VDS=-10V - 10 - ns
trRise Time ID=-1A - 18 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-5V - 23 - ns
tfFall Time RD=10Ω-31-ns
Ciss Input Capacitance VGS=0V - 1030 1650 pF
Coss Output Capacitance VDS=-20V - 120 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 105 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-1.2A, VGS=0V - - -1.2 V
trr Reverse Recovery Time2IS=-4A, VGS=0V, - 27 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2317GN-HF
65mΩ
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.01E+08
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.6
0.8
1
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
RDS(ON)
ID= -4A
VGS = -4.5V
0
4
8
12
16
20
01234
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=25 oC-5.0V
-4.5V
-3.5V
-2.5V
VG= -2.0V
0
4
8
12
16
20
01234
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
VG= -1.5V
-5.0V
-4.5V
-3.5V
-2.5V
TA=150oC
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1 1.2
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCTj=150 oC
0.4
0.6
0.8
1
1.2
1.4
-50 0 50 100 150
Tj, Junction Temperature ( oC)
Normalized -VGS(th) (V)
30
40
50
60
70
12345
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (
Ω
)
ID=-3A
TA=25 oC
65mΩ
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fi
g
10. Effective Transient Thermal Im
p
edance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP2317GN-HF
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID= -4A
VDS = -10V
0.01
0.1
1
10
100
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TA=25oC
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
tT
Rthja = 270℃/W
0
200
400
600
800
1000
1200
1 5 9 13172125
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0.02
Q
VG
QGS QGD
QG
Charge
-4.5V
td(on) trtd(off) tf
VDS
VGS
10%
90%
