NTE553 Schottky Barrier Diode Description: The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF switching applications. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35V Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20 to + 60C Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -45 to + 125C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Reverse Breakdown Voltage Test Conditions Min Typ Max Unit V(BR)R IR = -10A -35 - - V Reverse Leakage Current IR VR = -25V - - -0.1 A Forward Voltage VF IF = 10mA - - 1.0 V Diode Capacitance CT VR = -6V, f = 1MHZ - - 1.2 pf Series Resistance RS IF = 2mA, f = 100MHZ - - 1.2 Series Inductance LS f = 250MHZ - 3 - nH .600 (15.2) Min .200 (5.08) Max .022 (0.509) Dia Max .090 (2.28) Dia Max Color Band Denotes Cathode Rev. 11-12