NTE553
Schottky Barrier Diode
Description:
The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF
switching applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Reverse Voltage, VR−35V...............................................................
Forward Current, IF100mA..............................................................
Power Dissipation, PD150mW..........................................................
Operating Temperature Range, Topr −20° to + 60°C........................................
Storage Temperature range, Tstg −45° to + 125°C..........................................
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R IR = −10μA−35 − − V
Reverse Leakage Current IRVR = −25V − − −0.1 μA
Forward Voltage VFIF = 10mA − − 1.0 V
Diode Capacitance CTVR = −6V, f = 1MHZ− − 1.2 pf
Series Resistance RSIF = 2mA, f = 100MHZ− − 1.2 Ω
Series Inductance LSf = 250MHZ−3−nH
Color Band Denotes Cathode
.600 (15.2)
Min
.200 (5.08)
Max
.090 (2.28) Dia Max.022 (0.509) Dia Max
Rev. 11−12
