MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SC5200 Features * * * Silicon NPN triple diffused type Complementary to 2SA1943 Recommend for 100W fidelity audio frequency amplifier output stage NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 230 230 5.0 15 150 -55 to +150 -55 to +150 Unit V V V A W O C O C TO-3PL Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units Collector-Emitter Breakdown Voltage (IC=50mAdc, IB =0) Collector-Base Cutoff Current (VCB=230Vdc,IE =0) Emitter-Base Cutoff Current (VEB =5.0Vdc, IC=0) 230 --- Vdc --- 5.0 uAdc --- 5.0 uAdc OFF CHARACTERISTICS V (BR)CEO ICBO IEBO ON CHARACTERISTICS hFE-1 hFE-2 V CE(sat) V BE(sat) Forward Current Transfer ratio (IC=1.0Adc, VCE=5.0Vdc) Forward Current Transfer ratio (IC=7.0Adc, VCE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=8.0Adc, IB =0.8Adc) Base-Emitter Saturation Voltage (IC=7.0Adc,Vce=5.0Vdc) 55 160 --- 35 --- --- --- 3.0 Vdc --- 1.5 Vdc DIMENSIONS DIM A B C D E F G H I J K L M N O P Q INCHES MIN --.098 .098 .118 .039 .209 .020 .209 .126 .157 .079 .236 .433 .110 1.004 .764 --- www.mccsemi.com MAX .807 .051 .220 .033 .220 .142 1.043 .811 .205 MM MIN --2.50 2.50 3.00 .75 5.30 .50 5.30 3.20 4.00 2.00 6.00 11.00 2.80 25.50 19.40 --- MAX 20.50 1.30 5.60 .85 5.60 3.60 26.50 20.60 5.20 NOTE