2SC5200
NPN Silicon
Power Transistors
Features
• Silicon NPN triple diffused type
• Complementary to 2SA1943
• Recommend for 100W fidelity audio frequency amplifier output stage
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 230 V
VCBO Collector-Base Voltage 230 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current 15 A
PC Collector power dissipation 150 W
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=50mAdc, IB=0) 230 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=230Vdc,IE=0) --- 5.0 uAdc
IEBO Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0) --- 5.0 uAdc
ON CHARACTERISTICS
hFE-1 Forward Current Transfer ratio
(IC=1.0Adc, VCE=5.0Vdc) 55 160 ---
hFE-2 Forward Current Transfer ratio
(IC=7.0Adc, VCE=5.0Vdc) 35 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=8.0Adc, IB=0.8Adc) --- 3.0 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=7.0Adc,Vce=5.0Vdc) --- 1.5 Vdc
TO-3PL
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A --- .807 --- 20.50
B .098 2.50
C .098 2.50
D .118 3.00
E .039 .051 .75 1.30
F .209 .220 5.30 5.60
G .020 .033 .50 .85
H .209 .220 5.30 5.60
I .126 .142 3.20 3.60
J .157 4.00
K .079 2.00
L .236 6.00
M .433 11.00
N .110 2.80
O 1.004 1.043 25.50 26.50
P .764 .811 19.40 20.60
Q --- .205 --- 5.20
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