2N7002E N-Channel 60V MOSFET Features: Surface-mounted package BVDSS=60V , Advanced trench cell design Extremely low threshold voltage ESD protected (HBM 2KV) RDS(ON)3@VGS=10V RDS(ON)4@VGS=4.5V ID=0.43A Application Portable appliances Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGS 20 V 0.43 A 1.7 A PD 0.83 0.33 W TJ, Tstg -55 to150 0.4 A (1) Continuous Drain Current ID Pulsed Drain Current(1) IDM Ta=25 Power Dissipation Ta=100 Operating Junction and Storage Temperature Range Diode Forward Current IS (2) (1) Notes (1) Surface Mounted on 1 in 2 pad area, t10sec (2) Pulse width 300us, duty cycle 2 Thermal Characteristics Symbol RJA Characteristic Junction-to-Ambient Rev.0, June. 2012 Typ. Max. Units --- 150 /W 2N7002E N-Channel 60V MOSFET Electrical Characteristics (TA =25Unless Otherwise Specified) Symbol Parameter Test Condition Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250A 60 -- -- V VGS(th) Gate Threshold Voltage VDS=VGS,ID=250A 1.0 1.6 2.5 V IGSS Gate-Body Leakage VGS=20V -- -- 10 A IDSS Zero Gate Voltage Drain Current VDS =48V,VGS=0V -- -- 1 A RDS(ON) Drain-Source On-Resistance VGS=10 V, ID=0.4A -- 1.9 3.0 RDS(ON) Drain-Source On-Resistance VGS=4.5 V, ID=0.3A -- 2.0 4.0 RG Gate resistance VGS = VDS = 0V, F=1MHZ -- 130 -- Qg Total Gate Charge -- 305 -- Qgs Gate-Source Charge -- 85 -- Qgd Gate-Drain Charge -- 205 -- Ciss Input Capacitance -- 30 -- -- 4.2 -- Dynamic VDS=10V, ID =0.4A, VGS=4.5V VDS=25V, VGS=0V, f =1.0MHz nC pF Coss Output Capacitance Crss Reverse Transfer Capacitance -- 3 -- td(on) Turn-On Delay Time -- 3.9 9 tr Turn-On Rise Time -- 3.5 8 td(off) Turn-Off Delay Time -- 16 40 -- 10 20 -- 0.7 1.3 V tf VDS=30V, ID=0.2A, RG=25, VGEN= 10V, RL=150 Turn-Off Fall Time nS Source-Drain Diode Ratings and Characteristics (1) VSD Diode Forward voltage ISD=0.4A,VGS=0V Trr Reverse Recovery Time ISD =0.4A, -- 40 -- nS Qrr Reverse Recovery Charge dIF / dt = 100A/uS -- 40 -- uC Notes (1) Pulse testpulse width 300us, duty cycle2 Rev.0, June. 2012 2N7002E N-Channel 60V MOSFET Rev.0, June. 2012 2N7002E N-Channel 60V MOSFET Rev.0, June. 2012 2N7002E N-Channel 60V MOSFET Rev.0, June. 2012 2N7002E N-Channel 60V MOSFET SOT-23 DIM. A B C D E F G H I L S Rev.0, June. 2012 MIN. 0.89 0.30 0.085 2.75 1.20 0.85 1.70 2.10 0.0 0.60 typ. 0.35 All Dimensions in millimeter MAX. 1.20 0.51 0.18 3.04 1.60 1.05 2.10 2.75 0.1 0.65 2N7002E N-Channel 60V MOSFET Important Notice and Disclaimer LSC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. LSC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does LSC assume any liability for application assistance or customer product design. LSC does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of LSC. LSC products are not authorized for use as critical components in life support devices or systems without express written approval of LSC. Rev.0, June. 2012