2N7002E
N-Channel
60V
MOSFET
Rev.0, June.
2012
B
VDSS
=60V ,
R
DS(ON)
≦
≦≦
≦3Ω@VGS=10V
R
DS(ON)
≦
≦≦
≦4Ω@VGS=4.5V
I
D
=0.43A
F
eat
u
res:
Surface-mounted package
Advanced trench cell design
Extremely low threshold voltage
ESD protected (HBM ≧ 2KV)
Application
Portable appliances
Abso
l
ute
Max
i
mum
Rat
i
ngs
(T
A
=25
℃
Unless
O
t
herwise
No
t
ed)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current I
D
(1)
0.43 A
Pulsed Drain Current(1) I
DM
(2)
1.7 A
Ta=25
℃
0.83
Power Dissipation
Ta=100
℃
P
D
0.33 W
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to150
℃
Diode Forward Current
I
S
(1)
0.4 A
Notes
：
：：
：
(1)
Surface Mounted on 1 in 2 pad area, t≦10sec
(2)
Pulse width ≦300us, duty cycle ≦2％
Thermal
Characteristics
Symbol
Characteristic Typ. Max. Units
R
θ
JA
Junction-to-Ambient --- 150
℃
/W
2N7002E
N-Channel
60V
MOSFET
Rev.0, June.
2012
E
l
ectr
i
ca
l
Character
i
st
i
cs
(TA
=25
℃
Unless
O
t
herwise
Speci
f
ied)
Symbol
Parameter Test Condition Min.
Typ.
Max
.
Unit
Static
BV
DSS
Drain-Source
Breakdown
Voltage
V
GS
=0V,I
D
=250µA
60
-- --
V
V
GS(th)
Gate
Threshold
Voltage
V
DS
=V
GS
,I
D
=250µA
1.0 1.6 2.5 V
I
GSS
Gate-Body
Leakage
V
GS
=±20V
-- --
±10
µA
I
DSS
Zero
Gate
Voltage
Drain
Current
V
DS
=48V,V
GS
=0V
-- --
1
µA
R
DS(ON)
Drain-Source
On-Resistance
V
GS
=10 V, I
D
=0.4A
-- 1.9
3.0
Ω
R
DS(ON)
Drain-Source
On-Resistance
V
GS
=4.5 V, I
D
=0.3A
-- 2.0
4.0
Ω
Dynamic
R
G
Gate resistance
V
GS
= V
D
S = 0V, F=1MHZ
-- 130 --
Ω
Qg Total Gate Charge -- 305 --
Qgs Gate-Source
Charge -- 85 --
Qgd Gate-Drain
Charge
V
DS
=10V, I
D
=0.4A,
V
GS
=4.5V
-- 205 --
nC
Ciss Input Capacitance -- 30 --
Coss Output Capacitance -- 4.2 --
Crss Reverse Transfer Capacitance
V
DS
=25V, V
GS
=0V,
f =1.0MHz
-- 3 --
pF
t
d(on)
Turn-On Delay Time -- 3.9
9
t
r
Turn-On
Rise
Time -- 3.5
8
t
d(off)
Turn-Off Delay Time -- 16
40
t
f
Turn-Off Fall
Time
V
DS
=30V, I
D
=0.2A,
R
G
=25Ω, V
GEN
= 10V,
R
L
=150
Ω
-- 10
20
nS
Source-Drain Diode Ratings and Characteristics
V
SD
(1)
Diode Forward voltage I
SD
=0.4A,V
GS
=0V -- 0.7 1.3 V
Trr Reverse
Recovery
Time -- 40 -- nS
Qrr Reverse
Recovery
Charge
ISD =0.4A,
dIF / dt = 100A/uS -- 40 -- uC
Notes
：
：：
：
(1)
Pulse test：pulse width≦ 300us, duty cycle≦2％
2N7002E
N-Channel
60V
MOSFET
Rev.0, June.
2012
2N7002E
N-Channel
60V
MOSFET
Rev.0, June.
2012
2N7002E
N-Channel
60V
MOSFET
Rev.0, June.
2012
2N7002E
N-Channel
60V
MOSFET
Rev.0, June.
2012
SOT-23
D
I
M
.
M
I
N
.
MAX
.
A 0.89 1.20
B 0.30 0.51
C 0.085 0.18
D 2.75 3.04
E 1.20 1.60
F 0.85 1.05
G 1.70 2.10
H 2.10 2.75
I 0.0 0.1
L 0.60 typ.
S 0.35 0.65
All Dimensions in millime
t
er
2N7002E
N-Channel
60V
MOSFET
Rev.0, June.
2012
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specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design, purchase or use.
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products for any particular purpose, nor does LSC assume any liability for application
assistance or customer product design. LSC does not warrant or accept any liability with
products which are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of
LSC.
LSC products are not authorized for use as critical components in life support devices or
systems without express written approval of LSC.
