SOT-323 Plastic-Encapsulate Transistors MMST2222A TRANSISTOR ( NPN ) s0T323 > se = 1. BASE 1 FEATURES 2 EMITTER 3,COLLECTOR a Power dissipation FA Pow: 0.2 W i Tambe25 ic } : Collector cunrent ky : O.6 A Collactor-base voltage Vierceo : 75 vy Operating and storage junction temperature range Ty, Teg -S5C to #15050 ELECTRICAL CHARACTERISTICS (Tamb=25 unless Sananie otherwise specified) Parameter Symbal Test conditions fait MAK UMIT Collector-base breakdown voltage Verena key A, le=0 f3 v Collector-emitter breakdown voltage ViERIGED k= 10mA, led at Vv Emitter-base breakdown voltage VieReno MA, k=O 6 Vv Collector cut-off current leen Ver=70V, les0 o4 ud Collector cut-off current lego Weesssv, ke=o O41 oA Emitter cut-off current leses Veee av, leat o4 ud bret Versio b= 150mA 100 300 De current gain rE) Voesiow i= ima 50 Collector-emitter saturation voltage Veelgat) beS00mA k= 50mA he V Base-emilter saturation voltage Veo{ sat) beS00 mA k= 5omA 12 Vv Transition frequency fh Set er en 300 MHz f100MHz Vee@iOV, bo Output Capacitance Con Faas 8 pF Delay time ty Vers30, LE1S0mA id ngs Rise time t Vorjon 0.5 n= 16mA #6 ng Storage thme te Vers30V, LE 15OmA 225 ns Fall time ty k= Ing= 15erh Bo ns | Marking: K3P