Absolute Maximum Ratings (Note 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications. Above
which the useful life may be impaired.
Storage Temperature (T
STG
) −65˚C to +150˚C
Maximum Junction Temperature (T
J
)
Ceramic +175˚C
V
EE
Pin Potential to Ground Pin −7.0V to +0.5V
Input Voltage (DC) V
EE
to +0.5V
Output Current (DC Output HIGH) −50 mA
ESD (Note 3) ≥2000V
Recommended Operating
Conditions
Case Temperature (T
C
)
Military −55˚C to +125˚C
Supply Voltage (V
EE
) −5.7V to −4.2V
Note 2: Absolute maximum ratings are those values beyond which the de-
vice may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 3: ESD testing conforms to MIL-STD-883, Method 3015.
Military Version
DC Electrical Characteristics
V
EE
=−4.2V to −5.7V, V
CC
=V
CCA
=GND, T
C
=−55˚C to +125˚C
Symbol Parameter Min Max Units T
C
Conditions Notes
V
OH
Output HIGH Voltage −1025 −870 mV 0˚C to +125˚C
−1085 −870 mV −55˚C V
IN
=V
IH (Max)
Loading with (Notes 4, 5,
6)
V
OL
Output LOW Voltage −1830 −1620 mV 0˚C to +125˚C or V
IL (Min)
50Ωto −2.0V
−1830 −1555 mV −55˚C
V
OHC
Output HIGH Voltage −1035 mV 0˚C to +125˚C
−1085 mV −55˚C V
IN
=V
IH (Min)
Loading with (Notes 4, 5,
6)
V
OLC
Output LOW Voltage −1610 mV 0˚C to +125˚C or V
IL (Max)
50Ωto −2.0V
−1555 mV −55˚C
V
IH
Input HIGH Voltage −1165 −870 mV −55˚C to Guaranteed HIGH Signal (Notes 4, 5,
6, 7)
+125˚C for ALL Inputs
V
IL
Input LOW Voltage −1830 −1475 mV −55˚C to Guaranteed LOW Signal (Notes 4, 5,
6, 7)
+125˚C for ALL Inputs
I
IL
Input LOW Current 0.50 µA −55˚C to V
EE
=−4.2V (Notes 4, 5,
6)
+125˚C V
IN
=V
IL (Min)
I
IH
Input HIGH Current
S
0
,S
1
220
E
1
,E
2
350 µA 0˚C to +125˚C
D
na
–D
nd
340 V
EE
=−5.7V
MR 430 V
IN
=V
IH (Max)
(Notes 4, 5,
6)
S
0
,S
1
320
E
1
,E
2
500 µA −55˚C
D
na
–D
nd
490
MR 630
I
EE
Power Supply Current −95 −32 mA −55˚C to +125˚C Inputs Open (Notes 4, 5,
6)
Note 4: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 5: Screen tested 100%on each device at −55˚C, +25˚C, and +125˚C Temp., Subgroups 1, 2, 3, 7, and 8.
Note 6: Sample tested (Method 5005, Table 1) on each Mfg. lot at +25˚, +125˚C, and −55˚C Temp., Subgroups 1, 2, 3, 7, and 8.
Note 7: Guaranteed by applying specified input condition and testing VOH/VOL.
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