4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones Technical Data AT-36408 Features * 4.8 Volt Pulsed Operation (pulse width = 577 sec, duty cycle = 12.5%) SOIC-8 Surface Mount Plastic Package Outline P8 * +35.0 dBm Pout @ 900 MHz, Typ. * 65% Collector Efficiency @ 900 MHz, Typ. * 9 dB Power Gain @ 900 MHz, Typ. * Internal Input Pre-Matching Facilitates Cascading Applications * Output Power Device for GSM Class IV Handsets Pin Configuration BASE 1 8 BASE EMITTER 2 7 EMITTER COLLECTOR 3 6 COLLECTOR EMITTER 4 5 EMITTER Description Agilent's AT-36408 combines internal input pre-matching with low cost, NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic package. This device is designed for use as the output device for GSM Class IV handsets. At 4.8 volts, the device features +35 dBm pulsed output power, superior power added efficiency, and excellent gain, making the AT-36408 an excellent choice for battery powered systems. The AT-36408 is fabricated with Agilent's 10 GHz FT Self-AlignedTransistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices. 2 AT-36408 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current[2] Peak Power Dissipation [2, 3] Junction Temperature Storage Temperature Units V V V A W C C Absolute Maximum[1] 1.4 16.0 9.5 1.7 8.6 150 -65 to 150 Thermal Resistance[4]: jc = 60C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Pulsed operation, pulse width = 577 sec, duty cycle = 12.5%. 3. Derate at 133.3 mW/C for TC > 85C. TC is defined to be the temperature of the collector pins 3 and 6, where the lead contacts the circuit board. 4. Using the liquid crystal technique, VCE = 4.5 V, Ic = 100 mA, Tj =150C, 1- 2 m "hot-spot" resolution. Electrical Specifications, TC = 25C Symbol Parameters and Test Conditions Units Min. Typ. Pin = +26 dBm dBm +34.0 +35.0 55 65 Max. Freq. = 900 MHz, VCE = 4.8 V, ICQ = 50 mA, pulsed operation, pulse width = 577 sec, duty cycle = 12.5%, Test Circuit A,unless otherwise specified Pout C Output Power [1] Collector Efficiency [1] Pin = +26 dBm % H2 2nd Harmonic[1] F0 = 900 MHz dBc -50 H3 3rd Harmonic[1] F0 = 900 MHz dBc -40 Mismatch Tolerance, No Damage [1] BVEBO Emitter-Base Breakdown Voltage BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage hFE Forward Current Transfer Ratio ICEO Collector Leakage Current Pout = +35 dBm any phase, 2 sec duration 7:1 IE = 0.8 mA, open collector V 1.4 IC = 4.0 mA, open emitter V 16.0 IC = 20.0 mA, open base V 9.5 VCE = 3 V, IC = 180 mA -- 80 VCEO = 5 V A 150 Note: 1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (GSM). 330 50 3 AT-36408 Typical Performance, TC = 25C Frequency = 900 MHz, VCE = 4.8 V, ICQ = 50 mA, pulsed operation, pulse width = 577 sec, duty cycle = 12.5%, Test Circuit A (GSM), unless otherwise specified. Pout 65 26 50 c 35 20 18 14 6 28 23 3.6 V 4.8 V 6.0 V 18 13 5 8 10 12 14 16 18 20 22 24 26 28 INPUT POWER (dBm) 36.0 source = 0.88 -171 load = 0.85 +172 35.8 34 33 32 31 30 29 TC = +85C TC = +25C TC = -40C 28 27 15 17 19 21 23 25 8 50 40 30 20 3.6 V 4.8 V 6.0 V 10 10 12 14 16 18 20 22 24 26 6 Pin = +26 dBm Figure 3. Collector Efficiency vs. Input Power Over Bias Voltage. 75 source = 0.88 -171 load = 0.85 +172 35.6 71 Pout 35.4 35.2 67 35.0 c 34.8 63 34.6 34.4 59 34.2 27 28 INPUT POWER (dBm) Figure 4. Output Power vs. Input Power Over Temperature. 34.0 880 890 900 910 8 10 12 14 16 18 20 22 24 26 28 INPUT POWER (dBm) Figure 2. Output Power vs. Input Power Over Bias Voltage. OUTPUT POWER (dBm) OUTPUT POWER (dBm) 35 60 INPUT POWER (dBm) Figure 1. Output Power and Collector Efficiency vs. Input Power. 36 source = 0.88 -171 load = 0.85 +172 70 0 6 55 920 FREQUENCY (MHz) Figure 5. Output Power and Collector Efficiency vs. Frequency. Note: Tuned at 900 MHz, then swept over frequency. 0 Output R.L. -5 RETURN LOSS (dB) 22 33 COLLECTOR EFFICIENCY (%) 30 80 source = 0.88 -171 load = 0.85 +172 COLLECTOR EFFICIENCY (%) 80 OUTPUT POWER (dBm) 34 38 95 source = 0.88 -171 load = 0.85 +172 COLLECTOR EFFICIENCY (%) OUTPUT POWER (dBm) 38 -10 -15 Input R.L. -20 -25 800 source = 0.88 -171 load = 0.85 +172 850 900 950 1000 FREQUENCY (MHz) Figure 6. Input and Output Return Loss vs. Frequency. 4 AT-36408 Typical Large Signal Impedances 20 VCE = 4.8 V, ICQ = 50 mA, Pulsed Operation, Pout = +35.0 dBm 19 source Mag. 0.882 0.885 0.887 0.890 0.891 0.893 Ang. -170.0 -170.5 -171.1 -171.4 -169.0 -168.4 18 load Mag. 0.847 0.849 0.851 0.853 0.854 0.855 Ccb (pF) Freq. MHz 880 890 900 910 915 920 Ang. 172.7 172.2 171.6 171.1 168.4 168.2 17 16 15 14 13 12 0 2 4 6 8 10 Vcb (V) Figure 7. Collector-Base Capacitance vs. Collector-Base Voltage (DC Test). SPICE Model Parameters Die Model Packaged Model CPad C CPad Rlead CPad B Llead Lwire Rwire Lwbase Rwbase Lwire Rwire Lwbase Cbase Rwbase Lwbase Rwbase L=0 B Cpkg2 R= 1 Lwbase Rwbase Cpkg1 Die Area = 1.2 CPad = 0.3 pF Label BF IKF ISE NE VAF NF TF XTF VTF ITF PTF XTB BR IKR ISC NC VAR NR Value 280 299.9 9.9E-11 2.399 33.16 0.9935 1.6E-11 0.006656 0.02785 0.001 23 0 54.61 81 8.7E-13 1.587 1.511 0.9886 E1 Label TR EG IS XTI CJC VJC MJC XCJC FC CJE VJE MJE RB IRB RBM RE RC E2 Value 1E-9 1.11 3.598E-15 3 0.8E-12 0.4831 0.2508 0.001 0.999 6.16E-12 1.186 0.5965 0.752 0 0.01 1.27 0.107 Rlead Lwbb Rwbb LE1 LE2 Die Llead E1 Cbase L=0 Cpkg1 Die Lwbb Rwbb LE1 LE2 Cpkg2 Die R=1 Rlead Llead Cpkg1 Rlead Cpkg2 Llead Label Rlead Llead Rwire Lwire Cpkg1 Cpkg2 LE1 Value 0.63 1.45 nH 1.3 0.52 nH 0.4 pF 1.2 pF 0.3 nH Lwbb Rwbb C LE1 LE2 Die LE1 E2 Label LE2 Cbase Rwbase Lwbase Rwbb Lwbb Value 0.00064 nH 46.0 pF 0.2 1.19 nH 0.1 0.1 nH LE2 5 AT-36408 Typical Scattering Parameters, Common Emitter, ZO = 50 VCE = 3.6 V, Ic = 200 mA, Tc = 25C Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. 0.05 0.96 -175 22.3 13.08 93 -38.4 0.012 11 0.74 -169 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 0.96 0.96 0.94 0.90 0.84 0.79 0.92 0.97 -178 177 173 169 168 170 175 169 16.4 8.8 4.2 3.4 4.2 4.6 -1.2 -9.6 6.61 2.76 1.63 1.49 1.63 1.70 0.87 0.33 88 80 66 46 24 0 -68 -98 -37.7 -36.5 -34.4 -32.0 -32.0 -34.0 -37.1 -30.2 0.013 0.015 0.019 0.025 0.025 0.020 0.014 0.031 13 24 33 27 10 -14 126 97 0.74 0.75 0.73 0.71 0.72 0.81 1.01 0.96 -174 -177 -177 -172 -165 -160 -172 -177 VCE = 4.8 V, Ic = 200 mA, Tc = 25C 0.05 0.96 -174 22.6 0.10 0.96 -178 16.6 0.25 0.96 178 9.0 0.50 0.94 173 4.4 0.75 0.90 169 3.6 0.90 0.84 168 4.3 1.00 0.80 170 4.6 1.25 0.92 175 -1.0 1.50 0.97 169 -9.4 13.42 6.79 2.83 1.66 1.51 1.64 1.71 0.89 0.34 93 88 80 66 46 24 0 -67 -97 -37.7 -37.7 -36.5 -34.4 -32.4 -32.0 -34.0 -37.1 -30.2 0.013 0.013 0.015 0.019 0.024 0.025 0.020 0.014 0.031 11 13 23 32 26 9 -14 126 97 0.74 0.73 0.74 0.72 0.70 0.72 0.81 1.01 0.96 -169 -174 -177 -176 -172 -164 -160 -171 -177 VCE = 6.0 V, Ic = 200 mA, Tc = 25C 0.05 0.96 -174 22.7 0.10 0.96 -178 16.7 0.25 0.96 178 9.2 0.50 0.94 173 4.5 0.75 0.90 169 3.7 0.90 0.85 168 4.3 1.00 0.80 170 4.6 1.25 0.92 175 -1.0 1.50 0.97 169 -9.2 13.60 6.88 2.87 1.68 1.52 1.64 1.70 0.90 0.35 93 88 79 65 45 23 0 -67 -97 -37.7 -37.1 -35.9 -34.0 -32.0 -32.0 -34.0 -37.7 -30.2 0.013 0.014 0.016 0.020 0.025 0.025 0.020 0.013 0.031 12 14 23 30 24 8 -14 125 96 0.73 0.72 0.73 0.71 0.69 0.72 0.81 1.01 0.95 -169 -174 -177 -176 -171 -164 -159 -171 -177 Typical Performance 35 35 MSG 30 25 MAG MSG 15 10 5 30 25 |S21|2 0 MAG 20 GAIN (dB) GAIN (dB) 20 35 MSG MSG 15 10 5 |S21|2 0 -5 FREQUENCY (GHz) Figure 8. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 3.6 V, Ic = 200 mA. MAG MSG 20 15 10 5 |S21|2 0 -5 -10 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 MSG 25 GAIN (dB) 30 -5 -10 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 FREQUENCY (GHz) Figure 9. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 4.8 V, Ic = 200 mA. -10 0.05 0.10 0.25 0.50 0.75 0.90 1.00 1.25 1.50 FREQUENCY (GHz) Figure 10. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 6.0 V, Ic = 200 mA. 6 Test Circuit A: Test Circuit Board Layout @ 900 MHz (GSM) VCC VBB VBB C3 R2 R1 T1 L1 R4 R3 C2 VCC C6 C8 C9 L2 R5 9/96 C7 38.1 (1.5) C1 C4 INPUT C5 PA2 DEMO C10 OUTPUT B-MFG0140 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2 39.0 pF 39.0 pF 100.0 nF 12.5 pF 11.5 pF 100.0 nF 39.0 pF 1.5 F 10.0 F 39.0 pF 2.2 619.0 2.2 10.0 10.0 MBT 2222A 18.0 H 18.0 H 76.2 (3.0) Pulse Test VCE = 4.8 V ICQ = 50 mA Freq. = 900 MHz Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031) NOTE: Dimensions are shown in millimeters (inches). Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz (GSM) VBB 2.2 619 B DC C E Transistor 2.2 10 18 H VCC Pulse Test VCE = 4.8 V ICQ = 50 mA Freq. = 900 MHz 100 nF 10 39 pF 39 pF 80 /4 @ 900 MHz 18 H 80 100 nF 39 pF RF OUT 50 = 4.88 (.192) RF IN 12.5 pF = 1.52 (.060) 10 F /4 @ 900 MHz 50 39 pF 1.5 F 11.5 pF 7 Part Number Ordering Information Part Number No. of Devices Container AT-36408-TR1 1000 7" Reel AT-36408-BLK 25 Carrier Tape Package Dimensions SOIC-8 Surface Mount Plastic Package 1.27 (.050) 6x 3.80/4.00 (.1497/.1574) 5.84/6.20 (.230/.244) 0.38 0.10 (.015 .004) x 45 Pin 1 1.35/1.75 (.0532/.0688) 4.72/5.00 (.186/.197) 0/8 0.10 (.004) 0.33/0.51 (.013/.020) 8X 0.19/0.25 (.0075/.0098) 0.10/0.25 (.004/.0098) Note: 1. Dimensions are shown in millimeters (inches). 0.41/1.27 (.016/.050) Tape Dimensions and Product Orientation For Package SOIC-8 REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE D0 P0 COVER TAPE t P2 10 PITCHES CUMULATIVE TOLERANCE ON TAPE 0.2 MM (0.008) EMBOSSMENT E A K C F USER FEED DIRECTION B P1 T W D1 CENTER LINES OF CAVITY DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B K P1 D1 6.45 0.10 5.13 0.10 2.11 0.10 8.00 0.10 1.50 min. 0.254 0.004 0.202 0.004 0.083 0.004 0.315 0.004 0.059 min. PERFORATION DIAMETER PITCH POSITION D0 P0 E 1.50 + 0.10/-0 4.00 0.10 1.75 0.10 0.059 + 0.004/-0 0.157 0.004 0.069 0.004 CARRIER TAPE WIDTH THICKNESS W t 8.00 0.30 0.255 0.013 0.315 0.012 0.0100 0.0005 COVER TAPE WIDTH TAPE THICKNESS C T 9.19 0.10 0.051 0.010 0.362 0.004 0.0020 0.0004 DISTANCE BETWEEN CENTERLINE CAVITY TO PERFORATION (WIDTH DIRECTION) F 5.51 0.05 0.217 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 0.05 0.079 0.002 www.semiconductor.agilent.com Data subject to change. Copyright (c) 1999 Agilent Technologies 5965-5960E (11/99)