SBR20150CT-prel SBR20150CTI-prel SBR20150CTB-prel Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics Units Device optimized for high temperature Power Supply applications IF(AV) Rectangular Waveform 20 A VRRM 150 V 12 -65 to 200 nA, typ O C IR@150V, Tj=25oC Tj(operating/storage) MECHANICAL: * Molded Plastic TO-220AB, TO-262, TO-263 packages ELECTRICAL: * Ultra High Thermal Reliability * Low Reverse Leakage * Reliable High Temperature Operation * Super Barrier Design * Softest, fast switching capability * 200OC Operating Junction Temperature Case Styles SBR20150CT SBR20150CTI 2 1 Anode Common Cathode SBR20150CTB 2 2 3 Anode TO-220AB 1 Common Cathode Anode 3 Anode TO-262 1 Common Cathode Anode 3 Anode TO-263 _____________________________________________________________________________________________________ www.apdsemi.com 5/2/05 1 SBR20150CT-prel SBR20150CTI-prel SBR20150CTB-prel Maximum Ratings and Electrical Characteristics (at 25OC unless otherwise specified) SYMBOL UNITS DC Blocking Voltage Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRM VRWM VRRM 150 Volts RMS Reverse Voltage VR(RMS) 150 Volts IO 20 Amps Peak Forward Surge Current - 1/2 60hz IFSM 180 Amps Peak Repetitive Reverse Surge Current (2uS-2Khz) IRRM 3 Amps Average Rectified Forward Current (Rated VR-20Khz Square Wave)-50% duty cycle Instantaneous Forward Voltage (per leg) IF = 10A; TJ = 25OC IF = 20A; TJ = 25OC IF = 10A; TJ= 125OC Maximum Instantaneous Reverse Current at Rated VRM TJ = 25OC TJ = 125OC Maximum Rate of Voltage Change (at Rated VR) Maximum Thermal Resistance JC Operating and Storage Junction Temperature VF Typ 0.82 0.94 0.67 Max 0.86 0.98 0.71 IR * Typ 0.012 0.09 Max 5 1 dv/dt 10,000 RJC 2 TJ -65 to +200 Volts uA mA V/uS O C/W O C NOTE: Dice are available for customer applications. * Pulse width < 300 uS, Duty cycle < 2% _____________________________________________________________________________________________________ www.apdsemi.com 5/2/05 2 SBR20150CT-prel SBR20150CTI-prel SBR20150CTB-prel 1 100 Tj=175C 0.1 Ir, Reverse Current (mA) If, Instantaneous Forward Current (Amps) Tj=200C Tj=125C Tj=100C 0.01 Tj=75C 0.001 0.0001 Tj=25C 0.00001 Tj=200C Tj=175C 10 Tj=150 Tj=125 Tj=100 1 Tj=75C Tj=25C 0.1 0.000001 0 20 40 60 80 100 120 140 0.1 160 0.2 0.3 0.4 Figure 1: Typical Reverse Current If, Average Forward Current (Amps) 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 Vf, Instantaneous Typ Forward Voltage (Volts) Vr, Reverse Voltage (Volts) Figure 2: Typical Forward Voltage 12 10 8 6 4 2 0 100 110 120 130 140 150 160 170 180 190 200 Tc, Case Temp (C) Figure 3: Current Derating, Case APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. APD SEMICONDUCTOR does not convey any license under its patent rights nor the rights of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer purchase or use APD SEMICONDUCTOR products for any such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent regarding the design or manufacture of the part.. 2372-C Qume Drive, San Jose, CA 95131, USA Ph: 408 324 0918 FAX: 408 955 0604 Homepage: www.apdsemi.com email: info@apdsemi.com _____________________________________________________________________________________________________ www.apdsemi.com 5/2/05 3