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SBR20150CT-prel
SBR20150CTI-prel
SBR20150CTB-prel
Using state-of-the-art SBR IC process technology,
the following features are made possible in a single device:
Major ratings and characteristics
Characteristics Values Units Device optimized for high temperature
IF(AV) 20Rectangular Waveform APower Supply applications
VRRM 150 V
IR@150V, Tj=25oC12 nA, typ MECHANICAL:
Tj -65 to 200(operating/storage) OC* Molded Plastic TO-220AB, TO-262, TO-263 packages
ELECTRICAL:
* Ultra High Thermal Reliability
* Low Reverse Leakage
* Reliable High Temperature Operation
* Super Barrier Design
* Softest, fast switching capability
* 200OC Operating Junction Temperature
Case Styles
SBR20150CT SBR20150CTI SBR20150CTB
TO-220AB TO-262 TO-263
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www.apdsemi.com 5/2/05 1
13
2
Anode
Common
Cathode Anode 13
2
Anode
Common
Cathode Anode 13
2
Anode
Common
Cathode Anode
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SBR20150CT-prel
SBR20150CTI-prel
SBR20150CTB-prel
Maximum Ratings and Electrical Characteristics
(at 25OC unless otherwise specified)
SYMBOL UNITS
DC Blocking Voltage
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
VRM
VRWM
VRRM
150 Volts
RMS Reverse Voltage VR(RMS) 150 Volts
A
verage Rectified Forward Current
(Rated VR-20Khz Square Wave)-50% duty cycle IO
20 Amps
Peak Forward Surge Current - 1/2 60hz IFSM 180 Amps
Peak Repetitive Reverse Surge Current
(2uS-2Khz) IRRM 3Amps
Instantaneous Forward Voltage (per leg)
IF = 10A; TJ = 25OC
IF = 20A; TJ = 25OC
IF = 10A; TJ= 125OC
VF
Typ
0.82
0.94
0.67
Max
0.86
0.98
0.71
Volts
Maximum Instantaneous Reverse Current at
Rated VRM
TJ = 25OC
TJ = 125OC
IR *Typ
0.012
0.09
Max
5
1uA
mA
Maximum Rate of Voltage Change (at Rated VR)dv/dt 10,000 V/uS
Maximum Thermal Resistance JC RθJC 2OC/W
Operating and Storage Junction Temperature TJ-65 to +200 OC
NOTE: Dice are available for customer applications.
* Pulse width < 300 uS, Duty cycle < 2%
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SBR20150CT-prel
SBR20150CTI-prel
SBR20150CTB-prel
Figure 1: Typical Reverse Current Figure 2: Typical Forward Voltage
Figure 3: Current Derating, Case
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www.apdsemi.com 5/2/05 3
APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its products for
any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. “Typical” parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APD SEMICONDUCTOR does not convey any license under its patent rights nor the rights
of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or
for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer purchase or use APD SEMICONDUCTOR products for any
such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APD SEMICONDUCTOR
was negligent regarding the design or manufacture of the part..
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Ph: 408 324 0918 FAX: 408 955 0604
Homepage: www.apdsemi.com
email: info@apdsemi.com
0
2
4
6
8
10
12
100 110 120 130 140 150 160 170 180 190 200
Tc, Case Temp (C)
If, Average Forward Current (Amps)
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
0 20 40 60 80 100 120 140 160
Vr, Reverse Voltage (Volts)
Ir, R everse Curren t (mA)
Tj=25C
Tj=175C
Tj=75C
T
j
=200C
Tj=125C
T
j
=100C
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
Vf, Instantaneous Typ Forward Voltage (Volts)
If, I nst ant a neous Forward Current (Amps)
Tj=125
Tj=100
Tj=150
Tj=25C
Tj=75C
Tj=175C
Tj=200C