1
19MT050XF
Bulletin I27128 Rev.C 07/03
Absolute Maximum Ratings
IDContinuos Drain Current @ VGS = 10V @ TC = 25°C 31 A
@ TC = 100°C 19
IDM Pulsed Drain Current (1) 124
PDMaximum Power Dissipation @ TC = 25°C 1140 W
@ TC = 100°C 456
VGS Gate-to-Source Voltage ± 30 V
VISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
dv/dt Peak Diode Recovery dv/dt (3) 15 V/ ns
Parameters Max Units
HEXFET® Power MOSFET
Low On-Resistance
High Performance Optimised Built-in Fast
Recovery Diodes
Fully Characterized Capacitance and
Avalanche Voltage and Current
Aluminum Nitride DBC
Very Low Stray Inductance Design for
High Speed Operation
Features
"FULL-BRIDGE" FREDFET MTP
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Low Trr and Soft Diode Reverse Recovery
Optimized for Welding, UPS and SMPS
Applications
Outstanding ZVS and High Frequency
Operation
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal Resistance
UL Approved E78996
Benefits
MMTP
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31 A
VDSS = 500V
19MT050XF
Bulletin I27128 Rev.C 07/03
2www.irf.com
gfs Forward Transconductance 26 S VDS = 50V, ID = 19A
QgTotal Gate Charge 105 160 nC ID = 31A
Qgs Gate-to-Source Charge 36 55 VDS = 400V
Qgd Gate-to-Drain ("Miller") Charge 46 70 VGS = 10V (4)
td(on) Turn-on Delay Time 49 74 ns ID = 31A
td(off) Turn-off Delay Time 80 120 VDS = 250V
trRise Time 165 250 VGS = 10V
tfFall Time 76 115 RG = 4.3Ω
Ciss Input Capacitance 4808 7210 pF VGS = 0V
Coss Output Capacitance 1165 1750 VDS = 25V
Crss Reverse Transfer Capacitance 40 60 f = 1.0 MHz
V(BR)DSS Drain-to-Source Breakdown Voltage 500 V VGS = 0V, ID = 250µA
∆V(BR)DSS/ Temperature Coeff. of 0.48 V/°C ID = 4mA, reference to TJ = 25°C
∆TJBreakdown Voltage
RDS(ON) Static Drain-to-Source On-Resistance 0.19 0.22 ΩVGS = 10V, ID = 19A (4)
0.21 0.25 VGS = 10V, ID = 31A
VGS(th) Gate Threshold Voltage 3.0 6.0 V VDS = VGS, ID = 250µA
IDSS Drain-to-Source Leakage Current (6) 50 µA VDS = 500V, VGS = 0V
2mAV
DS = 400V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage 150 nA VGS = 30V
Gate-to-Source Reverse Leakage - 150 V GS = - 30V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
Dynamic Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
ISContinuous Source Current 31 A MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current 124 integral reverse
(Body Diode) (1) p-n junction diode
VSD Diode Forward Voltage 1.01 1.1 V TJ = 25°C, IS = 31A, VGS = 0V (4)
trr Reverse Recovery Time 252 378 ns TJ = 125°C, IF = 31A
Qrr Reverse Recovery Charge 1619 2428 nC di/dt = 100A/µs (4)
Diode Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
S
D
G
Bulletin I27128 Rev.C 07/03
3
19MT050XF
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Notes:
(1) Repetitive rating; pulse width limited by
max. junction temperature
(2) Starting TJ = 25°C, L = 1.0mH, RG = 25Ω
IAS = 31A
Thermal- Mechanical Specifications
TJOperating Junction Temperature Range - 40 150 °C
TSTG Storage Temperature Range - 40 125
RthJC Junction-to-Case (per MOSFET) 0.44 °C/ W
RthCS Case-to-Sink 0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance (5) (external shortest distance in air 5.5 mm
between two terminals)
Creepage (5) (shortest distance along external 8
surface of the insulating material between 2 terminals)
Weight 66 g
Parameters Min Typ Max Units
(3) ISD ≤ 31A, di/dt ≤ 340 A/µs, VDD≤ V(BR)DSS,
TJ ≤ 150°C
(4) Pulse width ≤ 400µs; duty cycle ≤ 2%
(5) Standard version only i.e. without optional thermistor
(6) ICES includes also opposite leg overall leakage
Avalanche Characteristics
EAS Single Pulse Avalanche Energy (2) 493 mJ
IAR Avalanche Current (1) 31 A
EAR Repetitive Avalanche Energy (1) 114 mJ
Parameters Min Typ Max Units
19MT050XF
Bulletin I27128 Rev.C 07/03
4www.irf.com
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 3. Typical Transfer Characteristics
0.1 110 100
VDS, Drain-to-Source V oltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
5.0V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
0.1 110 100
VDS, Drain-to-Source V oltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
5.0V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
4.0 5.0 6.0 7.0 8.0 9.0
VGS, Gat e-to-Source V ol t age (V)
0
1
10
100
1000
ID, Drain-to-Source Current ( A)
TJ = 25°C
TJ = 150°C
VDS = 50V
20µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 16
0
TJ , Junction Temperat ure (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 31A
VGS = 10V
Bulletin I27128 Rev.C 07/03
5
19MT050XF
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100 1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 40 80 120 160
QG Total Gate Charge (nC)
0
4
8
12
16
VGS, Gate-to-Source Voltage (V)
VDS= 400V
VDS= 250V
VDS= 100V
ID= 31A
FOR TEST CIRCUIT
SEE FIGURE 13
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
1 10 100 1000 10000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pu l s e
1msec
10msec
OPERATIO N IN THIS AREA
LIMITED BY RDS(on)
100µsec
19MT050XF
Bulletin I27128 Rev.C 07/03
6www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS td(on) trtd(off) tf
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (s ec)
0
.0001
0.001
0.01
0.1
1
Thermal Response ( Z
thJC
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.1272 0.00109
0.2697 0.03739
0.0429 3.749
τJ
τJ
τ1
τ1τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
Ci= τi/Ri
TC, Case Temperature
ID, Drain Current (A)
Thermal Response Z thJC (°C/W)
0
4
8
1
2
1
6
2
0
2
4
2
8
32
25 50 75 100 125 15
0
Bulletin I27128 Rev.C 07/03
7
19MT050XF
www.irf.com
D.U.T. VD
S
ID
IG
3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13a. Gate Charge Test Circuit Fig 13b. Basic Gate Charge Waveform
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
Fig 12c. Unclamped Inductive Waveforms
Fig 12b. Unclamped Inductive Test Circuit
and vs Junction Temperature
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Q
G
Q
GS
Q
GD
V
G
Charge
VGS
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
0
200
400
600
800
1000
EAS, Single Pulse Avalanche Energy (mJ)
ID
TOP 14A
19A
BOTTOM
31A
19MT050XF
Bulletin I27128 Rev.C 07/03
8www.irf.com
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
Bulletin I27128 Rev.C 07/03
9
19MT050XF
www.irf.com
Outline Table
Dimensions in millimeters
19MT050XF
Bulletin I27128 Rev.C 07/03
10 www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 09/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
Device Code
12 3 45
Ordering Information Table
1- Current rating (19 = 19A)
2- Essential Part Number
3- Voltage code (050 = 500V)
4- Speed/ Type (X = HexFet)
5- Circuit Configuration (F = Full Bridge)
19 MT 050 X F