MJE1090 thre MJE1093 PNP (siicon) MJE2090 tru MJE2093 MJE1100 thu MJEI103 NPN MJE 2100 sn MJE2Z103 5.0 AMPERE PLASTIC MEDIUM-POWER DARLINGTON COMPLEMENTARY SILICON TRANSISTORS POWER TRANSISTORS COMPLEMENTARY SILICON Designed for use in driver and output stages in complementary 60-80 VOLTS audio amplifier applications. 70 WATTS @ High DC Current Gain Moelose hee = 750 (Min) @ Ic = 3.0 and 4.0 Adc MJE 1092 MJE 1093 @ True Three Lead Monolithic Construction Emitter-Base Resistors MJE1100 to Prevent Leakage Multiplication are Built in. we so0 Available in Two Packages Case 90 or Case 199 MJE1103 MAXIMUM RATINGS MJe 1090 | MJE1002 MJE 1091 | MJE 1093 MJE 1100 | MJE1102 MJE1101|M Rating Symbol | mJE2090 Msez002 Unis MJE2091 | MJE2083 MJE2100 |MJE2102 CASE 90-05 MJE2101 | MJE2103 Collector-Emitter Voltage VcEO 60 80 Vide Coliector-Base Voltage | Ves 60 80 Vide Emitter-Base Voltage Ves 5.0 Vde Collector Current lo 5.0 Adc MJE2090 Base Current iB 0.1 Ade MJE2091 Total Device Dissipation @ Te = 25C Py 70 Watts MJE2092 P 9, 1, MJE2093 Derate above 25C 0.56 wire MJE2100 Operating and Storage Junction Ty Tst -55 to +150 US MJE2101 Temperating Range 8 MJE2102 MJE2103 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermat Resistance, Junction to Case 9NC 18 oc FIGURE 1 ~ POWER DERATING CASE 199-04 Pp, POWER DISSIPATION (WATTS) o 20 ou 60 80 100 120 140 160 Tc, CASE TEMPERATURE (C) 520 MJE 1090 thru MJE1093 PNP/MJE1100 thru MJE1103 NPN (continued) MJE2090 thru MJE2093 PNP/MJE2100 thru MJE2103.NPN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) Characteristic [ symbot [ min [max | unite | OFF CHARACTERISTICS Collector-Emitter Breakdown Voitagel t! BVcEO Vde (Ie = 100 mAde, Ig = 0) MJE 1090, MJE 1091, MJE 1100, MJE 1101 60 - MJE2090, MJE2091, MJE2100, MJE2101 60 = MJE 1092, MJE 1093, MJE 1102, MJE 1103 80 - MJE2092, MJE2093, MJE 2102, MJE2103 80 = Collector Cutoff Current IcEO uAde (Vcg = 30 Vic, Ig = 0) MJE 1090, MJE 1091, MJE 1100, MJE 1101 ~ 500 MJE 2080, MJE2091, MJE2100, MJ22101 = 500 (Vice = 40 Vide, tg = OF MJE 3092, MJE 1093, MJE 1102, MJE1103 = 500 MJE2092, MJE 2093, MJE 2102, MJE2103 = 500 Cotlector Cutoff Current IcBo mAdc (Vog = Rated BVcEoC,. Ig = 0) - 0.2 (Vog = Rated BVceo, ic = 0, To = 100C) = 2.0 Emitter Cutoff Current lerao - 2.0 mAdc (VgeE = 5.0 Vac, Ic = 0) ON CHARACTERISTICS (1) DC Current Gain hee - (ig = 3.0 Ade, Voge = 3.0 Vic) MJE 1090, MJE 1092, MJE 1100, MJE 1102 750 - MJE2080, MJE 2092, MJE2100, MJE2102 750 = (Ic = 4.0 Adc, Voge = 3.0 Vde} MJE 1091, MJE 1093, MJE 1101, MJE 1103 750 _ MJE2091, MJE 2093, MJE2101, MJE2103 750 = Collector-Emitter Saturation Voltage VCE {sat) Vde lg = 3.0 Ade, 1g = 12 mAdc) MJE 1090, MJE 1092, MJE 1100, MJE1102 - 25 MJE2090, MJE2092, MJE2100, MJE2102 = 2.5 {ic = 4.0 Ade, lg = 16 mAdc) MJE 1091, MJE 1093, MJE1101, MJE 1103 - 2.8 | MJE 2091, MJE2093, MJE2101, MJE2103 = 2.3 Base-Emitter On Vaitage VBE ton} Vde tig = 3.0 Adc, Vg = 3.0 Vide} MJE 1090, MJE 1092, MJE 1100, MJE 1102 - 25 MJE2090, MJE2692, MJE2100, MJE2102 = 2.5 (1 = 4.0 Adc, Vog = 3.0 Vde} MJE1091, MJE 1093, MJE 1101, MJE 1103 - 2.5 MJE2091, MJE2093, MJE2101, MJE2103 = 2.5 DYNAMIC CHARACTERISTICS Smalt-Signal Current Gain (Ig = 3.0 Adc, Voge = 3.0 Vie, f = 1.0 MHz) a FIGURE 2 ~ DC SAFE OPERATING AREA (eulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. < = z == Secondary Breskdown Limited There are two limitations on the power handling ability of a = - Thermally Limited at Te = 259C transistor: junction temperature and secondary breakdown. Safe 3 ~ Wire Limited operating area curves indicate ic - Ve limits of the transistor that < MJE1096, 31 must be observed for reliable operation: e.g., the transistor must 8 M3E2090, 97 not be subjected to greater dissipation than the curves indicate. 2 MJE1100, Of { At high case temperatures, thermal limitations will reduce the 3 power that can be handled to values less than the limitations s } imposed by secondary breakdown. (See AN-415)} MJE2092, 93 Te* MJE 1102, 03 . 03 1d 2000 30 5 7.0 iG 2 (30 50 76 106 Vee. COLLECTOR-EMITTER VOLTAGE (VOLTS) FIGURE 3 - DARLINGTON CIRCWIT SCHEMATIC one cco 4 on i Ni Collector N Collector MJE1090 Baseotq MJE1100 Baseot4 thru thru MJE 1093 | MJE 4103 | MJE2090 | MJE21006 | | thru ; thru a MJE2093 Ae WA O Emitter MJE2103 Ne mA Emitter MJE 1090 thru MJE1093 PNP/MJE1100 thru MJE1103 NPN (continued) MJE2090 thru MJE2093 PNP/MJE2100 thru MJE2103 NPN MJE 1090 MJE 1091 MJE 1092 MJE1093 8 - M wens tue 4 MJE1 103 (es i I ra] 1 i aan eae o eh STYLE 2: R PIN 1, EMITTER it 2. COLLECTOR ees) c 3. BASE NOTE: 1. LEADS WITHIN .005 RAD OF TRUE POSITION (TP) AT MMC CASE 90-05 MJE2090 MJE2091 MJE2092 MJE2093 MJE2100 MJE2Z101 MJE2102 MJE2103 aN 4 we aL | * : an D He Ley L R STYLE 1: vt d pint. BASE ec 2. COLLECTOR tT 3. EMITTER 1. BIM G6 IS TO CENTER LINE OF LEADS. CASE 199-04