PNP EPITAXIAL SILICON POWER TRANSISTOR MJE350
TO126
Plastic Package
Designed for use in Line-Operated Applications sush as Low Power, Line- Operated Series
Pass and Switching Regulators
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL UNIT
Collector -Emitter Voltage VCEO V
Collector -Base Voltage V
V
Emitter Base Voltage VEBO V
Collector Current Continuous ICmA
Power Dissipation @ Ta=25ºC PDW
Power Dissipation @ Tc=25ºC PDW
Operating And Storage Junction
Temperature Range Tj, Tstg ºC
THERMAL CHARACTERISTICS
Junction to Ambient in free air Rth (j-a) ºC/W
Junction to Case Rth (j-c) ºC/W
ELECTRICAL CHARACTERISTICS (T
=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MAX UNIT
Collector Emitter Sustaining Voltage VCEO (sus) IC=1mA, IB=0 V
Collector Cut Off Current
ICBO VCB=300V, IE=0 100 µA
Emitter Cut Off Current
IEBO
VEB=3V, IC=0
100
µA
DC Current Gain hFE IC=50mA, VCE=10V 240
- 65 to +150
300
500
1.25
20
VALUE
300
300
3.0
100
6.25
MIN
30
C
E
Transys
Electronics
LI
M
ITE
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