Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-800-777-4363 1 November 23, 1999–15
SFH610A/615A/617A
5.3 kV TRIOS
Optocoupler
High Reliability
FEATURES
• High Current Transfer Ratios
at 10 mA: 40–320%
at 1.0 mA: 60% typical (>13)
• Low CTR Degradation
• Good CTR Linearity Depending on Forward Current
• Withstand Test Voltage, 5300 V
RMS
• High Collector-Emitter Voltage, V
CEO
=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
• VDE 0884 Available with Option 1
• SMD Option – See SFH6106/16/56 Data Sheet
DESCRIPTION
The SFH61XA features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis-
tor detector, and is incorporated in a plastic DIP-4
package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an opera-
tion voltage of 400 V
RMS
or DC.
Specifications subject to change.
V
DE
Maximum Ratings
Emitter
Reverse Voltage............................................................................6 V
DC Forward Current.................................................................60 mA
Surge Forward Current (tP
≤
10 µs).............................................2.5 A
Total Power Dissipation.........................................................100 mW
Detector
Collector-Emitter Voltage ............................................................70 V
Emitter-Collector Voltage ..............................................................7 V
Collector Current .....................................................................50 mA
Collector Current (t
P
≤
1 ms)....................................................100 mA
Total Power Dissipation.........................................................150 mW
Package
Isolation Test Voltage between Emitter and Detector,
refer to Climate DIN 40046, part 2, Nov. 74................. 5300 V
RMS
Creepage................................................................................
≥
7 mm
Clearance ...............................................................................
≥
7 mm
Insulation Thickness between Emitter and Detector ...........
≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 ........................................
≥
175
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C..........................................................
≥
10
12
Ω
V
IO
=500 V, T
A
=100
°
C........................................................
≥
10
11
Ω
Storage Temperature Range ......................................–55 to +150
°
C
Ambient Temperature Range......................................–55 to +100
°
C
Junction Temperature..............................................................100
°
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm)....................................260
°
C
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4°
typ.
1.00 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
10°
3°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
.050 (1.27)
1
2
4
3
Emitter
Collector
Anode
Cathode
SFH610A
1
2
4
3Emitter
Collector
Anode
Cathode
Dimensions in Inches (mm)
SFH615A/617A
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
SFH610/11/15/17A
www.infineon.com/opto • 1-800-777-4363 2 November 23, 1999–15
Characteristics
(T
A
=25°C)
Current Transfer Ratio
(I
C
/I
F
at V
CE
=5 V)
and Collector-Emitter Leakage Current by Dash Number
Description Symbol Unit Condition
Emitter (IR GaAs)
Forward Voltage V
F
1.25 (
≤
1.65) V I
F
=60 mA
Reverse Current I
R
0.01 (
≤
10)
µ
AV
R
=6 V
Capacitance C
0
13 pF V
R
=0 V, f=1 MHz
Thermal Resistance R
thJA
750 K/W
Detector (Si Phototransistor)
Capacitance C
CE
5.2 pF V
CE
=5 V, f=1 MHz
Thermal Resistance R
thJA
500 K/W
Package
Collector-Emitter Saturation Voltage V
CESAT
0.25 (
≤
0.4) V I
F
=10 mA, I
C
=2.5 mA
Coupling Capacitance C
C
0.4 pF
Description -1 -2 -3 -4
I
C
/ I
F
(I
F
=10 mA) 40–80 63–125 100–200 160–320 %
I
C
/ I
F
(I
F
=1 mA) 30 (>13) 45 (>22) 70 (>34) 90 (>56)
Collector-Emitter Leakage Current, I
CEO
V
CE
=10 V 2 (
≤
50) 2 (
≤
50) 5 (
≤
100) 5 (
≤
100) nA
I
F
=10 mA, V
CC
=5 V, T
A
=25°C
Load Resistance R
L
75
Ω
Turn-on Time t
ON
3.0 µs
Rise Time t
R
2.0
Turn-off Time t
OFF
2.3
Fall Time t
F
2.0
Cut-off Frequency F
CO
250 kHz
Parameter Sym.
Dash No.
Unit
-1
I
F
=20 mA
-2 and -3
I
F
=10 mA
-4
I
F
=5 mA
Turn-on Time t
ON
3.0 4.2 6.0 µs
Rise Time t
R
2.0 3.0 4.6
Turn-off Time t
OFF
18 23 25
Fall Time t
F
11 14 15
Switching Times (Typical)
Linear Operation
(without saturation)
Switching Operation
(with saturation)
RL=75 Ω
VCC=5 V
IC
47 Ω
IF
IF1 KΩ
VCC=5 V
47 Ω
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
SFH610/11/15/17A
www.infineon.com/opto • 1-800-777-4363 3 November 23, 1999–15
Figure 1. Current transfer ratio (typ.)
vs. temperature
I
F
=10 mA, V
CE
=5 V
Figure 2. Output characteristics (typ.)
Collector current vs. collector-emitter
voltage
T
A
=25°C
Figure 3. Diode forward voltage
(typ.) vs. forward current
Figure 7. Permissible diode forward
current vs. ambient temp.
Figure 4. Transistor capacitance (typ.) vs.
collector-emitter voltage
T
A
=25°C, f=1 MHz
Figure 5. Permissible pulse handling
capability. Forward current vs. pulse
width
Pulse cycle D=parameter, T
A
=25°C
Figure 6. Permissible power
dissipation vs. ambient temperature
20
15
10
0
5
pF
C
10-2 10-1 10-0 101102
V
Ve
CCE
