Supertex inc.
Supertex inc.
www.supertex.com
Doc.# DSFP-VP2110
B082313
VP2110
P1AW W = Code for Week Sealed
= “Green” Packaging
Features
►Free from secondary breakdown
►Low power drive requirement
►Ease of paralleling
►Low CISS and fast switching speeds
►Excellent thermal stability
►Integral source-to-drain diode
►High input impedance and high gain
Applications
►Motor controls
►Converters
►Ampliers
►Switches
►Power supply circuits
►Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex VP2110 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefcient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Pin Conguration
Product Marking
TO-236AB (SOT-23)
DRAIN
SOURCE
GATE
TO-236AB (SOT-23)
Package may or may not include the following marks: Si or
P-Channel Enhancement-Mode
Vertical DMOS FET
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Ordering Information
Part Number Package Option Packing
VP2110K1-G TO-236AB (SOT-23) 3000/Reel
Product Summary
BVDSS/BVDGS
RDS(ON)
(max)
ID(ON
(min)
-100V 12Ω-500mA
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Typical Thermal Resistance
Package θja
TO-236AB (SOT-23) 203OC/W
2
Supertex inc.
www.supertex.com
Doc.# DSFP-VP2110
B082313
VP2110
Electrical Characteristics (TA = 25OC unless otherwise specied)
Sym Parameter Min Typ Max Units Conditions
BVDSS Drain-to-Source breakdown voltage -100 - - V VGS = 0V, ID = -1.0mA
VGS(th) Gate threshold voltage -1.5 - -3.5 V VGS = VDS, ID= -1.0mA
ΔVGS(th) Change in VGS(th) with temperature - 5.8 6.5 mV/OC VGS = VDS, ID= -1.0mA
IGSS Gate body leakage - -1.0 -100 nA VGS = ± 20V, VDS = 0V
IDSS Zero Gate voltage Drain current
- - -10 µA VGS = 0V, VDS = Max Rating
- - -1.0 mA VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
ID(ON) On-state Drain current -0.5 -1.0 - A VGS = -10V, VDS = -25V
RDS(ON) Static Drain-to-Source on-state resistance -11 15 ΩVGS = -5.0V, ID = -100mA
- 9.0 12 VGS = -10V, ID = -500mA
ΔRDS(ON) Change in RDS(ON) with temperature - 0.55 1.0 %/OC VGS = -10V, ID = -500mA
GFS Forward transductance 150 200 - mmho VDS = -25V, ID = -500mA
CISS Input capacitance - 45 60
pF
VGS = 0V,
VDS = -25V,
f = 1.0MHz
COSS Common Source output capacitance - 22 30
CRSS Reverse transfer capacitance - 3.0 8.0
td(ON) Turn-on delay time - 4.0 5.0
ns
VDD = -25V,
ID = -500mA,
RGEN = 25Ω
trRise time - 5.0 8.0
td(OFF) Turn-off delay time - 5.0 9.0
tfFall time - 4.0 8.0
VSD Diode forward voltage drop - -1.2 -2.0 V VGS = 0V, ISD = -500mA
trr Reverse recovery time - 400 - ns VGS = 0V, ISD = -500mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF) tf
tr
INPUT
R
GEN
INPUT
OUTPUT
0V
VDD
0V
-10V
Thermal Characteristics
Package ID
(continuous)†
ID
(pulsed)
Power Dissipation
@TA = 25OCIDR
†IDRM
TO-236AB (SOT-23) -120mA -400mA 0.36W -120mA -400mA
Notes:
† ID (continuous) is limited by max rated Tj.
3
Supertex inc.
www.supertex.com
Doc.# DSFP-VP2110
B082313
VP2110
Typical Performance Curves
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
100
75
50
25
0
C (picofarads)
0 -10 -20 -30 -40
0 -2 -4 -6 -8 -10
-1.0
-0.6
-0.4
-0.2
0
-50 0 50 100 150
-1.1
-1.0
-0.9
20
16
12
8
4
0
1.4
1.2
1.0
0.8
0.6
-10
-6
-4
-2
0
0 1.0 2.0
-50 0 50 100 150
35pF
0 -0.2 -0.4 -0.6 -0.8 -1.0
f = 1.0MHz
C
ISS
C
OSS
C
RSS
101pF
2.0
1.6
1.2
0.8
0.4
0
V
(th)
@ 1.0mA
RDS(ON) @ -10V, 0.5A
25
O
C
RDS(ON) (ohms)
BVDSS (normalized)
Tj (OC) ID (amperes)
BV
DSS
Variation with Temperature
V
GS
= -5.0V
V
(th)
and
RDS
Variation with Temperature
V
GS (volts)
I
D
(amperes)
T
A
= -55
O
C
QG (nanocoulombs)
VGS (volts)
VDS (volts)
V
GS
= -10V
V
DS
= -25V
V
DS
= -10V
V
DS
= -40V
125
O
C
VGS(th) (normalized)
Tj (OC)
RDS(ON) (normalized)
4
Supertex inc.
www.supertex.com
Doc.# DSFP-VP2110
B082313
VP2110
Typical Performance Curves (cont.)
Output Characteristics
-2.0
-1.6
-1.2
-0.8
-0.4
0
Saturation Characteristics
-1.0
-0.8
-0.6
-0.4
-0.2
-0
Maximum Rated Safe Operating Area
-0.1 -1.0 -10 -100
-1.0
-0.1
-0.01
-0.001
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001 0.01 0.1 1.0 10
Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature
0 25 50 75 100 125 150
1.0
0.5
0
TO-236AB
TO-236AB (DC)
TO-236AB (pulsed)
0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10
250
200
150
100
50
0
0 -0.2 -0.4 -0.6 -0.8 -1.0
-7V
-6V
-5V
-4V
-3V
-8V
-9V
-7V
-6V
-5V
-4V
-8V
-9V
TO-236AB
P
D
= 0.36W
T
A
= 25
O
C
V
DS
(volts)
I
D
(amperes)
V
DS
(volts)
VGS = -10V
G
FS
(millisiemens)
I
D
(amperes)
T
A
(
O
C)
P
D
(watts)
T
A
= -55
O
C
t
p
(seconds)
VGS = -10V
I
D
(amperes)
VDS = -25V
25O
C
125
O
C
I
D
(amperes)
V
DS
(volts)
T
A
= 25
O
C
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
5
VP2110
(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-VP2110
B082313
3-Lead TO-236AB (SOT-23) Package Outline (K1)
2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch
Symbol A A1 A2 b D E E1 e e1 L L1 θ
Dimension
(mm)
MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 0.95
BSC
1.90
BSC
0.20†
0.54
REF
0O
NOM - - 0.95 - 2.90 - 1.30 0.50 -
MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 0.60 8O
JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO236ABK1, Version C041309.
View B
View A - A
Side View
Top View
View B
Gauge
Plane
Seating
Plane
0.25
L1
L
E1 E
D
3
12
e
e1
b
A
A
Seating
Plane
AA2
A1