MMBT4403 Switching Transistor PNP Silicon COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO IC Symbol PD R qJA Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Value -40 -40 -5.0 -600 Unit Vdc Vdc Vdc mAdc Max Unit 225 mW 1.8 mW/ C C/W 556 300 PD mW 2.4 R qJA 417 mW/ C C/W TJ,Tstg -55 to +150 C Device Marking MMBT4403=2T Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage(3) (IC=-1.0mAdc.IB=0) V(BR)CEO -40 - Vdc Collector-Base Breakdown Voltage (IC=-0.1mAdc, IE=0) V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage (IE=-0.1mAdc, IC=0) V(BR)EBO -5.0 - Vdc Base Cutoff Current (VCE=-35 Vdc, VEB =-0.4 Vdc) IBEV - -0.1 uAdc Collector Cutoff Current (VCE=-35Vdc, VEB=-0.4Vdc) ICEX - -0.1 uAdc Off Characteristics 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3.Pulse Test:Pulse Width < =300 S, Duty Cycle < =2.0%. WEITRON http://www.weitron.com.tw MMBT4403 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max 30 - 60 - 100 300 100 - Unit On Characteristics (3) DC Current Gain (IC= -0.1 mAdc, VCE= -1.0Vdc) (IC= -1.0 mAdc, VCE= -1.0 Vdc) (IC= -10 mAdc, VCE= -1.0Vdc) (3) (IC= 150 mAdc, VCE= -2.0Vdc) HFE (3) (IC= -500 mAdc, VCE= -2.0Vdc) - 20 Collector-Emitter Saturation Voltage (3) (IC= -150 mAdc, IB= -15mAdc) (IC= -500 mAdc, IB= -50mAdc) VCE(sat) - -0.4 -0.75 Vdc Base-Emitter Saturation Voltage (3) (IC= -150 mAdc, IB= -15 mAdc) (IC= -500 mAdc, IB= -50 mAdc) VBE(sat) -0.75 -0.95 -1.3 Vdc 200 - MHz Ccb - 8.5 pF Ceb - 30 pF hie 1.5 15 k ohms Voltage Feeback Radio (VCE= -10Vdc IC=-1.0 mAdc, f=1.0 kHz) hre 0.1 8 x 10-4 Small-Signal Current Gain (VCE= -10Vdc IC=-1.0 mAdc, , f=1.0 kHz) hfe 60 500 - Output Admittance (VCE= -10Vdc IC=-1.0 mAdc, f=-1.0kHz) hoe 1.0 100 mhos Small-signal Characteristics Current-Gain-Bandwidth Product (4) (IC= -20 mAdc, VCE= -10 Vdc, f=100MHz) Collector-Base Capacitance (VCB= -10 Vdc, IE=0, f=1.0MHz) Emitter-Base Capacitance (VEB= -0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (VCE= -10 Vdc IC=-1.0 mAdc, f=1.0 kHz) fT Switching Characteristics Delay Time Rise Time Storage Time Fall Time (Vcc= -30 Vdc, VEB= -2.0 Vdc Ic= -150 mAdc, IB1= -15 mAdc) td - 15 tr - 20 (Vcc= -30 Vdc, Ic= -150 mAdc, IB1=IB2= -15 mAdc) ts - 225 tf - 30 WEITRON http://www.weitron.com.tw ns ns MMBT4403 S W IT C HING T IME E QUIVA L E NT T E S T C IR C UIT - 30 V - 30 V 200 W < 2 ns +2 V +14 V 0 0 1.0 k W - 16 V CS * < 10 pF 10 to 100ms, DUTY CYCLE = 2% 200W < 20 ns 1.0 kW -16 V CS * < 10 pF 1.0 to 100m s, DUTY CYCLE = 2% + 4.0 V S cope ris e time < 4.0 ns *Total s hunt capacitance of tes t jig connectors , and os cillos cope F igure 1. Turn-On T ime F igure 2. Turn-Off T ime TRANSIENTCHARACTERISTICS 25 C 105 C 30 Ceb Q, CHARGE (nC) CAPACITANCE (pF) 20 10 7.0 5.0 10 7.0 Ccb 5.0 VCC = 30 V IC/IB = 10 3.0 2.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.2 0.3 0.1 10 20 30 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 Figure 3. Capacitances 100 IC/IB = 10 70 70 tr, RISE TIME (ns) 50 t, TIME (ns) 500 Figure 4. Charge Data 100 tr @ V CC = 30 V tr @ V CC = 10 V td @ V BE(off) = 2 V td @ V BE(off) = 0 30 20 30 20 10 7.0 7.0 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. T urn-On T ime WEITRON http://www.weitron.com.tw 300 500 VCC = 30 V IC/IB = 10 50 10 5.0 10 200 300 30 50 70 100 IC, COLLECTOR CURRENT (mA) 5.0 10 20 30 50 70 100 200 I C, COLLECTOR CURRENT (mA) Figure 6. Rise Time 300 500 MMBT4403 200 ts4, STORAGE TIME (ns) IC/IB = 10 100 IC/IB = 20 70 50 IB1 = IB2 ts4= ts - 1/8 tf 30 20 10 30 20 50 200 70 100 300 500 IC, COLLECTOR CURRENT (mA) Figure 7. Storage T ime h P ARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25 C This group of graphs illustrates the relationship between hfe and other " h " parameters for this series of transistors. To 1000 hfe , CURRENT GAIN 500 300 200 MMBT4403 UNIT 1 MMBT4403 UNIT 2 100 70 50 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hie , INPUT IMPEDANCE (OHMS) 100 k 700 30 0.1 obtain these curves, a highgain and a lowgain unit were selected from the MMBT4403LT1 lines, and the same units were used to develop the correspondinglynumbered curves on each graph. 20 k 10 k 5k 2k 1k 500 200 100 5.0 7.0 10 MMBT4403 UNIT 1 MMBT4403 UNIT 2 50 k 0.1 IC, COLLECTOR CURRENT (mAdc) MMBT4403 UNIT 1 MMBT4403 UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC , COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio WEITRON http://www.weitron.com.tw 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 1 1. Input Impedance hoe , OUTPUT ADMITTANCE ( umhos) hre , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 10 0.3 IC, COLLECTOR CURRENT (mAdc) Figure 10. Current Gain 20 0.2 500 100 50 20 MMBT4403 MMBT4403 10 UNIT 1 UNIT 2 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) Figure 13. Output Admittance 5.0 7.0 10 MMBT4403 hFE, NORMALIZED CURRENT GAIN S TAT IC C HA R A C T E R IS T IC S 3.0 VCE = 1.0 V VCE = 10 V 2.0 TJ = 125 C 25 C 1.0 - 55 C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 I C, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 0.5 TJ = 25 C 0.8 VBE(sat) @ I C/IB = 10 0.6 VBE(sat) @ V CE = 10 V 0 COEFFICIENT (mV/ C) VOLTAGE (VOLTS) 1.0 0.4 0.2 VC for VCE(sat) 0.5 1.0 1.5 2.0 VCE(sat) @ I C/IB = 10 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 I C, COLLECTOR CURRENT (mA) " " Figure 16. On V oltages WEITRON http://www.weitron.com.tw 500 2.5 0.1 0.2 VS for VBE 50 100 200 0.5 1.0 2.0 5.0 10 20 I C, COLLECTOR CURRENT (mA) Figure 17. T emperature Coefficients 500 MMBT4403 SOT-23 Package Outline Dimensions Unit:mm A B TOP VIEW E G Dim A B C D E G H J K L M C D H K J WEITRON http://www.weitron.com.tw L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25