MMBT4403 - Weitron Technology - Datasheet.Directory

Switching Transistor PNP Silicon

1.FR-5=1.0 x 0.75 x 0.062 in.

2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.

3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%.

M aximum R atings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base VOltage

Collector Current-Continuous

Symbol

VCEO

VCBO

VEBO

Value

-40

-5.0

Unit

Vdc

mAdc

-600

Rating

MMBT4403=2T

Device Marking

Collector-Emitter Breakdown Voltage(3) (IC=-1.0mAdc.IB=0)

Collector-Base Breakdown Voltage (IC=-0.1mAdc, IE=0)

Emitter-Base Breakdown Voltage (IE=-0.1mAdc, IC=0)

Base Cutoff Current (VCE=-35 Vdc, VEB =-0.4 Vdc)

Collector Cutoff Current (VCE=-35Vdc, VEB=-0.4Vdc)

V(BR)CEO

V(BR)CBO

V(BR)EBO

IBEV

ICEX

-0.1

Vdc

uAdc

Off Characteristics

MMBT4403

BASE

COLLECTOR

EMITTER

-40

-5.0

Characteristics Symbol Min Max Unit

Electrical Characteristics (TA=25 C Unless Otherwise noted)

http://www.weitron.com.tw

WEITRON

Total Device Dissipation FR-5 Board (1)

TA=25 C

Derate above 25 C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate, (2) TA=25 C

Derate above 25 C

Junction and Storage, Temperature

Characteristics

TJ,Tstg

R JA

Symbol Max

225

1.8

556

300

2.4

417

-55 to +150

Unit

mW/ C

C/W

mW/ C

C/W

Thermal Characteristics

R JAq

SOT-23

MMBT4403

Small-signal Characteristics

Current-Gain-Bandwidth Product (4)

(IC= -20 mAdc, VCE= -10 Vdc, f=100MHz)

Collector-Base Capacitance

(VCB= -10 Vdc, IE=0, f=1.0MHz)

Emitter-Base Capacitance

(VEB= -0.5 Vdc, IC=0, f=1.0MHz)

Input Impedance

(VCE= -10 Vdc IC=-1.0 mAdc, f=1.0 kHz)

Voltage Feeback Radio

(VCE= -10Vdc IC=-1.0 mAdc, f=1.0 kHz)

Small-Signal Current Gain

(VCE= -10Vdc IC=-1.0 mAdc, , f=1.0 kHz)

Output Admittance

(VCE= -10Vdc IC=-1.0 mAdc, f=-1.0kHz)

Ccb

Ceb

hie

hre

hfe

hoe

200

0.1

1.5

1.0

8.5

MHz

k ohms

x 10-4

µmhos

100

500

DC Current Gain

(IC= -0.1 mAdc, VCE= -1.0Vdc)

(IC= -1.0 mAdc, VCE= -1.0 Vdc)

(IC= -10 mAdc, VCE= -1.0Vdc)

(IC= 150 mAdc, VCE= -2.0Vdc)

(IC= -500 mAdc, VCE= -2.0Vdc)

Collector-Emitter Saturation Voltage (3)

(IC= -150 mAdc, IB= -15mAdc)

(IC= -500 mAdc, IB= -50mAdc)

Base-Emitter Saturation Voltage (3)

(IC= -150 mAdc, IB= -15 mAdc)

(IC= -500 mAdc, IB= -50 mAdc)

HFE

VCE(sat)

VBE(sat)

Vdc

100

On Characteristics

-0.75

300

-0.4

-0.75

-0.95

-1.3

(3)

Switching Characteristics

Delay Time

Rise Time

Storage Time

Fall Time

(Vcc= -30 Vdc, VEB= -2.0 Vdc

Ic= -150 mAdc, IB1= -15 mAdc)

(Vcc= -30 Vdc,

Ic= -150 mAdc, IB1=IB2= -15 mAdc)

225

WEITRON

http://www.weitron.com.tw

Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)

Characteristics Symbol Unit

Min Max

(3)

Figure 3. Capacitances

REVERSE VOLTAGE (VOLTS)

7.0

5.0

Figure 4. Charge Data

IC, COLLECTOR CURRENT (mA)

0.1 2.0 5.0 10 20

2.0

CAPACITANCE (pF)

Q, CHARGE (nC)

2.0

3.0

5.0

7.0

1.0

10 20 50 70 100 200

0.1 300 500

0.7

0.5

VCC = 30 V

IC/I

B = 10

Figure 5. Turn-On T ime

IC, COLLECTOR CURRENT (mA)

5.0

7.0

Figure 6. Rise Time

IC, COLLECTOR CURRENT (mA)

Ceb

25 C 105 C

TRANSIENT CHARACTERISTICS

3.01.00.50.30.2

0.3

0.2

t, TIME (ns)

Ccb

100

10 20 50 70 100 200 300 500

IC/IB

= 10

tr @ V CC = 30 V

tr @ V CC = 10 V

td @ V BE(off) = 2 V

td @ V BE(off) = 0 20

5.0

7.0

100

10 20 50 70 100 200 300 500

VCC = 30 V

IC/IB = 10

0.7 7.0

tr, RISE TIME (ns)

F igure 1. Turn-On T ime F igure 2. Turn-Off T ime

S W IT C HING T IME E QUIVA L E NT T E S T C IR C UIT

S cope rise time < 4.0 ns

*Total shunt capacitance of test jig connectors , and oscilloscope

+2 V

-16 V 10 to 100 ms,

DUTY CYCLE = 2%

1.0 k

-30 V

200 W

CS* < 10 pF 1.0 k

-30 V

200

CS* < 10 pF

+4.0 V

< 2 ns

1.0 to 100 ms,

DUTY CYCLE = 2%

< 20 ns

+14 V

-16 V

MMBT4403

WEITRON

http://www.weitron.com.tw

h P ARAMETERS

VCE = ±10 Vdc, f = 1.0 kHz, TA = 25 C

This group of graphs illustrates the relationship between

hfe and other h parameters for this series of transistors. To

obtain these curves, a high±gain and a low±gain unit were

selected from the MMBT4403LT1 lines, and the same units

were used to develop the correspondingly±numbered curves

on each graph.

Figure 10. Current Gain

IC, COLLECTOR CURRENT (mAdc)

0.1 0.2 0.5 0.7 1.0 2.0 3.0 10

0.3

300

700

200

100

1000

hfe , CURRENT GAIN

hie , INPUT IMPEDANCE (OHMS)

Figure 1 1. Input Impedance

IC, COLLECTOR CURRENT (mAdc)

100k

100

5.0 7.0

20k

10k

5k

2k

1k

0.1 0.2 0.5 0.7 1.0 2.0 3.0 10

0.3 5.0 7.0

Figure 12. Voltage Feedback Ratio

IC, COLLECT

OR CURRENT (mAdc)

0.1 0.2 0.5 0.7 1.0 2.0 3.0 10

0.3

0.1

Figure 13. Output Admittance

IC, COLLECTOR CURRENT (mAdc)

500

1.0

5.0 7.0

5.0

2.0

5.0

2.0

1.0

0.5

0.2

h , OUTPUT ADMITTANCE ( mhos)

h , VOLTAGE FEEDBACK RATIO (X 10 )



-4

MMBT4403 UNIT 1

MMBT4403 UNIT 2

0.1 0.2 0.5 0.7 1.0 2.0 3.0 10

0.3 5.0 7.0

500

50k

500

200

100

MMBT4403 UNIT 1

MMBT4403 UNIT 2

MMBT4403 UNIT 1

MMBT4403 UNIT 2

MMBT4403 UNIT 1

MMBT4403 UNIT 2

Figure 7. Storage T ime

IC, COLLECTOR CURRENT (mA)

ts, STORAGE TIME (ns)

10 20 50 70 100 200 300 500

100

200

IC/IB

= 10

IC/IB

= 20

IB1 = IB2

ts4 = ts - 1/8 tf

WEITRON

http://www.weitron.com.tw

MMBT4403

S TAT IC C HA R AC T E R IS T IC S

Figure 14. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 15. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

V , COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.5 2.0 3.0 500.2 0.3

1.00.7 5.0 7.0

IC = 1.0 mA

0.070.050.030.020.01

10 mA 100 mA

10 20 30

0.3

0.5

0.7

1.0

3.0

0.1

h , NORMALIZED CURRENT GAIN

0.5 2.0 3.0 10 50 70

0.2 0.3

0.2

100

1.00.7 500

30205.0 7.0

TJ = 125 C

-55 C

2.0

200 300

25 C

VCE = 1.0 V

VCE = 10 V

Figure 16. On V oltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

Figure 17. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50

100

0.5

1.0

1.5

2.0

500

TJ = 25 C

VBE(sat) @ I C/IB

= 10

VCE(sat)

@ I C/IB

= 10

VBE(sat) @ V CE = 10 V

VC for V

CE(sat)

VS for V

200

0.1 0.2 0.5

COEFFICIENT (mV/ C)

2.5 1.0 2.0 5.0 10 20 50 100 500

200

0.1 0.2 0.5

500 mA

0.005

MMBT4403

WEITRON

http://www.weitron.com.tw

" "

MMBT4403

WEITRON

http://www.weitron.com.tw

Dim

Min

0.35

1.19

2.10

0.85

0.46

1.70

2.70

0.01

0.89

0.30

0.076

Max

0.51

1.40

3.00

1.05

1.00

2.10

3.10

0.13

1.10

0.61

0.25

TOP VIEW

SOT-23 Package Outline Dimensions Unit:mm