SST404 / SST405 / SST406
CORPORATION
ABSOLUTE M AXIMUM R ATING S (TA = 2 5oC unless ot he rwise no te d)
P ar amete r/ Test Con di tio n Symbol Lim it Unit
Gate-Drain V oltage VGD -50 V
Gate-Source V oltage VGS -50 V
Forward Gate Current IG10 mA
Power Dissipation (per side) PD300 mW
(total) 500 mW
Pow er Derat ing (per side) 2 .4 mW / oC
(total) 4 mW/ oC
Oper ating Junc tion Tem peratu re TJ-55 t o 150 oC
Storage Temperature Tstg -55 t o 200 oC
Lead Temper at ure (1/1 6" from case f or 10 sec onds ) TL300 oC
ELECTRICAL CHARA CT ERIST ICS (TA = 25 oC unless otherwise noted)
SYMBOL CHARACTERISTCS TYP1SST404 SST405 SST406 UNIT TEST CONDITIONS
MIN MAX MIN MAX MIN MAX
STATIC
V(BR)GSS Gate-Source Breakdown V oltage -58 -50 -50 -50
V
IG = -1µA, VDS = 0V
V(BR)G1 - G2 Gate-Gate Breakdown V o ltage -58 ±50 ±50 ±50 IG = ±1µA, VDS = 0V, VGS = 0V
VGS(OFF) Gate-Source Cut off Voltage -1.5 -0.5 -2.5 -0.5 -2.5 -0.5 -2.5 VDS = 15V, ID = 1nA
IDSS Saturation Drain Current 23.50.5100.5100.510 mA V
DS = 15V, VGS = 0V
IGSS Gate Reverse Current -2 -25 -25 -25 pA VGS = -30 V, VDS = 0V
-1 nA TA = 125oC
IGGate Operating Current -2 -15 -15 -15 pA VDG = 15V, ID = 200µA
-0.8 -10 -10 -10 nA TA = 125oC
rDS(ON) Drain-Source On-Resistance 250 ΩVGS = 0V, ID = 0.1mA
VGS Gate-Source Voltage -1 -2.3 -2.3 -2.3 VVDG = 15V, ID = 200µA
VGS(F) Gate-Source Forward V oltage 0.7 IG = 1mA, VDS = 0V
DYNAMIC
gfs Common-Source Forward Transconductance 1.5 121212 mS
VDG = 15V, ID = 200µA
f = 1kHz
gos Common-Source Output Conductance 1.3 2 2 2 µS
gfs Common-Source Forward Transconductance 1.5 272727 VDS = 10V, VGS = 0V
f = 1kHz
gos Common-Source Output Conductance 10 20 20 20
Ciss Common-Source Input Capacitance 8 8 8 pF VDG = 15V, ID = 200µA
f = 1MHz
Crss Common-Source Reverse Transf e r Capaci tance 1.5 3 3 3
enEquivalent Input Noise Voltage 10 20 20 20 nV/ Hz VDG = 15V, ID = 200µA
f = 10Hz
MATCHING
| VGS1 - VGS2 | Differenti al Gate-Source Voltage 15 20 40 mV VDG = 10V, ID = 200µA
∆ | VGS1 - VGS2 |
∆TGate-Source Voltage Differential Change with
Temperature 25 40 80 µV/ oCTA = -55 to 25oCVDG = 10V,
ID = 200µA
25 40 80 TA = 25 to 125oC
CMRR Common Mode Rejection Ratio 102 95 90 dB VDG = 10 to 20V, ID = 200µA
NOTES: 1. F or design aid only, not subject to production testing.
2. Pulse test; PW = 300µs, duty cycle ≤ 3% .