NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 1
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Based on DDR3-1066/1333 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM B-Die
Based on DDR3-1066 1Gx4 (DDP) (16GB) SDRAM B-Die
Features
•Performance:
Speed Sort
PC3-8500
PC3-10600
Unit
-BE
-CG
DIMM CAS Latency
7
9
fck – Clock Frequency
533
667
MHz
tck – Clock Cycle
1.875
1.5
ns
fDQ – DQ Burst Frequency
1066
1333
Mbps
• 240-Pin Registered Dual In-Line Memory Module (RDIMM)
• 2GB/4GB: 256Mx72/512Mx72 DDR3 Registered DIMM based on
256Mx8 DDR3 SDRAM B-Die devices
• 4GB/8GB: 512Mx72/1024Mx72 DDR3 Registered DIMM based
on 512Mx4 DDR3 SDRAM B-Die devices
• 16GB: 2Gx72 DDR3 Registered DIMM based on 1024Mx4 (DDP)
DDR3 SDRAM B-Die devices
• Intended for 533MHz/667MHz applications
• Inputs and outputs are SSTL-15 compatible
•VDD = VDDQ = 1.5V ± 0.075V (for DDR3)
•VDD = VDDQ = 1.35V+0.0675/-0.1V (for DDR3L)
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive
clock edge
• Nominal and Dynamic On-Die Termination support
• Programmable Operation:
- DIMM Latency: 6,7,8,9
- Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8
- Operation: Burst Read and Write
• Two different termination values (Rtt_Nom & Rtt_WR)
• 15/10/1 (row/column/rank) Addressing for 2GB
• 15/11/1 (row/column/rank) Addressing for 4GB (512Mx4 Device)
• 15/10/2 (row/column/rank) Addressing for 4GB (256Mx8 Device)
• 15/11/2 (row/column/rank) Addressing for 8GB
• 15/11/4 (row/column/rank) Addressing for 16GB
• Extended operating temperature rage
• Auto Self-Refresh option
• Serial Presence Detect
• Gold contacts
• SDRAMs are in 78-ball BGA Package
• RoHS compliance
• Halogen free product
Description
All memory modules are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Registered Dual In-Line Memory Module, organized as
one rank of 256Mx72 (2GB), one rank or two ranks of 512Mx72 (4GB), two ranks of 1Gx72 (8GB) and four ranks of 2Gx72 (16GB)
high-speed memory array. Modules use nine 256Mx8 (2GB) 78-ball BGA packaged devices, eighteen 256Mx8 (4GB) 78-ball BGA
packaged devices, thirty-six 512Mx4 (8GB) 78-ball BGA packaged devices and thirty-six 1Gx4 (DDP) (16GB) 78-ball BGA packaged
devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these
common design files minimizes electrical variation between suppliers. All NANYA DDR3 SDRAM DIMMs provide a high-performance,
flexible 8-byte interface in a 5.25” long space-saving footprint.
The DIMM is intended for use in applications operating of 533MHz/667MHz clock speeds and achieves high-speed data transfer rates of
1066Mbps/1333Mbps. Prior to any access operation, the device latency and burst/length/operation type must be programmed into the
DIMM by address inputs A0-A14 and I/O inputs BA0~BA2 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data
are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 2
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Ordering Information
Part Number
Speed
Register
Organization
Power
Leads
Note
NT2GC72B89B0NJ-CG
DDR3-1333
PC3-10600
667MHz (1.5ns @ CL = 9)
TI
256Mx72
1.5V
Gold
NT2GC72B89B0NK-CG
DDR3-1333
PC3-10600
667MHz (1.5ns @ CL = 9)
IDT
NT4GC72B4PB0NL-CG
DDR3-1333
PC3-10600
667MHz (1.5ns @ CL = 9)
Inphi
512Mx72
NT4GC72B4PB0NJ-CG
DDR3-1333
PC3-10600
667MHz (1.5ns @ CL = 9)
TI
NT4GC72B8PB0NL-CG
DDR3-1333
PC3-10600
667MHz (1.5ns @ CL = 9)
Inphi
NT4GC72B8PB0NJ-CG
DDR3-1333
PC3-10600
667MHz (1.5ns @ CL = 9)
TI
NT8GC72B4NB1NJ-CG
DDR3-1333
PC3-10600
667MHz (1.5ns @ CL = 9)
TI
1Gx72
NT8GC72B4NB1NK-CG
DDR3-1333
PC3-10600
667MHz (1.5ns @ CL = 9)
IDT
NT16TC72B4NB1NL-BE
DDR3-1066
PC3-8500
533MHz (1.875ns @ CL = 7)
Inphi
2Gx72
NT16TC72B4NB1NJ-BE
DDR3-1066
PC3-8500
533MHz (1.875ns @ CL = 7)
TI
NT2GC72C89B0NJ-CG
DDR3L-1333
PC3L-10600
667MHz (1.5ns @ CL = 9)
TI
256Mx72
1.35V
NT2GC72C89B0NK-CG
DDR3L-1333
PC3L-10600
667MHz (1.5ns @ CL = 9)
IDT
NT4GC72C4PB0NL-CG
DDR3L-1333
PC3L-10600
667MHz (1.5ns @ CL = 9)
Inphi
512Mx72
NT4GC72C4PB0NJ-CG
DDR3L-1333
PC3L-10600
667MHz (1.5ns @ CL = 9)
TI
NT4GC72C8PB0NL-CG
DDR3L-1333
PC3L-10600
667MHz (1.5ns @ CL = 9)
Inphi
NT4GC72C8PB0NJ-CG
DDR3L-1333
PC3L-10600
667MHz (1.5ns @ CL = 9)
TI
NT8GC72C4NB1NJ-CG
DDR3L-1333
PC3L-10600
667MHz (1.5ns @ CL = 9)
TI
1Gx72
NT8GC72C4NB1NK-CG
DDR3L-1333
PC3L-10600
667MHz (1.5ns @ CL = 9)
IDT
NT16TC72C4NB1NL-BE
DDR3L-1066
PC3L-8500
533MHz (1.875ns @ CL = 7)
Inphi
2Gx72
NT16TC72C4NB1NJ-BE
DDR3L-1066
PC3L-8500
533MHz (1.875ns @ CL = 7)
TI
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 3
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Pin Description
Pin Name
Description
Pin Name
Description
CK0, CK1
Clock Inputs, positive line
ODT0, ODT1
Active termination control lines
,
Clock Inputs, negative line
DQ0-DQ63
Data input/output
CKE0, CKE1
Clock Enable
DQS0-DQS17
Data strobes
Row Address Strobe
-
Data strobes complement
Column Address Strobe
TDQS9-TDQS17
Termination data strobes
Write Enable
-
Termination data strobes
-
Chip Selects
DM0-DM8
Data Masks
A0-A9, A11, A13
Address Inputs
CB0-CB7
ECC Check Bits
A10/AP
Address Input/Auto-Precharge
Temperature event pin
A12/
Address Input/Burst Chop
Reset pin
BA0-BA2
SDRAM Bank Address Inputs
VREFDQ , VREFCA
Input/Output Reference
SCL
Serial Presence Detect Clock Input
VDDSPD
SPD and Temp sensor power
SDA
Serial Presence Detect Data input/output
SA0, SA1, SA2
Serial Presence Detect Address Inputs
Par_In
Parity bit for the Address and Control bus
Vtt
Termination voltage
Parity error found on the Address and Control bus
VSS
Ground
NC
No Connect
VDD
Core and I/O power
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 4
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
DDR3 SDRAM Pin Assignment
Pin
Front
Pin
Back
Pin
Front
Pin
Back
Pin
Front
Pin
Back
Pin
Front
Pin
Back
1
VREFDQ
121
VSS
31
DQ25
151
VSS
61
A2
181
A1
91
DQ41
211
VSS
2
VSS
122
DQ4
32
VSS
152
DM3/DQS12
/TDQS12
62
VDD
182
VDD
92
VSS
212
DM5/DQS14
/TDQS14
3
DQ0
123
DQ5
33
153
NC/
/
63
NC
183
VDD
93
213
NC/
/
4
DQ1
124
VSS
34
DQS3
154
VSS
64
NC
184
CK0
94
DQS5
214
VSS
5
VSS
125
DM0/DQS9/
TDQS9
35
VSS
155
DQ30
65
VDD
185
95
VSS
215
DQ46
6
126
NC/
/
36
DQ26
156
DQ31
66
VDD
186
VDD
96
DQ42
216
DQ47
7
DQS0
127
VSS
37
DQ27
157
VSS
67
VREFCA
187
97
DQ43
217
VSS
8
VSS
128
DQ6
38
VSS
158
CB4
68
Par_In/NC
188
A0
98
VSS
218
DQ52
9
DQ2
129
DQ7
39
CB0
159
CB5
69
VDD
189
VDD
99
DQ48
219
DQ53
10
DQ3
130
VSS
40
CB1
160
VSS
70
A10/AP
190
BA1
100
DQ49
220
VSS
11
VSS
131
DQ12
41
VSS
161
DM8/DQS17
/TDQS17
71
BA0
191
VDD
101
VSS
221
DM6/DQS15
/TDQS15
12
DQ8
132
DQ13
42
162
NC/
/
72
VDD
192
102
222
NC/
/
13
DQ9
133
VSS
43
DQS8
163
VSS
73
193
103
DQS6
223
VSS
14
VSS
134
DM1/DQS10
/TDQS10
44
VSS
164
CB6
74
194
VDD
104
VSS
224
DQ54
15
135
NC/
/
45
CB2
165
CB7
75
VDD
195
ODT0
105
DQ50
225
DQ55
16
DQS1
136
VSS
46
CB3
166
VSS
76
/NC
196
A13
106
DQ51
226
VSS
17
VSS
137
DQ14
47
VSS
167
NC
77
ODT1/NC
197
VDD
107
VSS
227
DQ60
18
DQ10
138
DQ15
48
VTT/NC
168
78
VDD
198
/NC
108
DQ56
228
DQ61
19
DQ11
139
VSS
49
VTT/NC
169
CKE1/NC
79
/NC
199
VSS
109
DQ57
229
VSS
20
VSS
140
DQ20
50
CKE0
170
VDD
80
VSS
200
DQ36
110
VSS
230
DM7/DQS16
/TDQS16
21
DQ16
141
DQ21
51
VDD
171
NC
81
DQ32
201
DQ37
111
231
NC/
/
22
DQ17
142
VSS
52
BA2
172
NC
82
DQ33
202
VSS
112
DQS7
232
VSS
23
VSS
143
DM2/DQS11
/TDQS11
53
/NC
173
VDD
83
VSS
203
DM4/DQS13
/TDQS13
113
VSS
233
DQ62
24
144
NC/
/
54
VDD
174
A12/
84
204
NC/
/
114
DQ58
234
DQ63
25
DQS2
145
VSS
55
A11
175
A9
85
DQS4
205
VSS
115
DQ59
235
VSS
26
VSS
146
DQ22
56
A7
176
VDD
86
VSS
206
DQ38
116
VSS
236
VDDSPD
27
DQ18
147
DQ23
57
VDD
177
A8
87
DQ34
207
DQ39
117
SA0
237
SA1
28
DQ19
148
VSS
58
A5
178
A6
88
DQ35
208
VSS
118
SCL
238
SDA
29
VSS
149
DQ28
59
A4
179
VDD
89
VSS
209
DQ44
119
SA2
239
VSS
30
DQ24
150
DQ29
60
VDD
180
A3
90
DQ40
210
DQ45
120
VTT
240
VTT
Note: 1. CKE1, and ODT1 are for 2GB/4GB/8GB only.
2. and are for 8GB only.
3. TDQS9-TDQS17 and - are for 1GB/2GB only.
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 5
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Input/Output Functional Description
Symbol
Type
Polarity
Function
CK0, CK1
,
Input
Cross
point
The system clock inputs. All address and command lines are sampled on the cross point of the
rising edge of CK and falling edge of . A Delay Locked Loop (DLL) circuit is driven from the
clock inputs and output timing for read operations is synchronized to the input clock. However,
CK1 and are terminated but not used on RDIMMs.
CKE0, CKE1
Input
Active
High
Activates the DDR3 SDRAM CK signal when high and deactivates the CK signal when low. By
deactivating the clocks, CKE low initiates the Power Down mode or the Self Refresh mode.
–
Input
Active
Low
Enable the command decoders for the associated rank of SDRAM when low and disables
decoders when high. When decoders are disabled, new commands are ignored and previous
operations continue. Other combinations of these input signals perform unique functions,
including disabling all outputs (except CKE and ODT) of the register(s) on the DIMM or accessing
internal control words in the register device(s). For modules with two registers, and operate
similarly to and for the second set of register outputs or register control words.
, ,
Input
Active
Low
When sampled at the positive rising edge of CK and falling edge of , signals , ,
define the operation to be executed by the SDRAM.
ODT0, ODT1
Input
Active
High
Asserts on-die termination for DQ, DM, DQS, and signals if enabled via the DDR3 SDRAM
mode register.
DM0 – DM8
Input
Active
High
The data write masks, associated with one data byte. In Write mode, DM operates as a byte mask
by allowing input data to be written if it is low but blocks the write operation if it is high. In Read
mode, DM lines have no effect.
DQS0 – DQS17
–
I/O
Cross
point
The data strobes, associated with one data byte, sourced with data transfers. In Write mode, the
data strobe is sourced by the controller and is centered in the data window. In Read mode, the
data strobe is sourced by the DDR3 SDRAM and is sent at the leading edge of the data window.
signals are complements, and timing is relative to the cross point of respective DQS and
. If the module is to be operated in single ended strobe mode, all signals must be tied on
the system board to VSS and DDR3 SDRAM mode registers programmed appropriately.
TDQS9 – TDQS17
–
Output
TDQS/ is applicable for x8 DRAMs only. When enabled via mode register A11=1 in MR1,
DRAM will enable the same termination resistance function on TDQS/ that is applied to
DQS/. When disabled via mode register A11=0 in MR1, DM/TDQS will provide the data
mask function is not used. X4/x16 DRAMs must disable the TDQS function via mode
register A11=0 in MR1.
BA0, BA1, BA2
Input
-
Selects which DDR3 SDRAM internal bank of four or eight is activated.
A0 – A9
A10/AP
A11
A12/
A13
Input
-
During a Bank Activate command cycle, defines the row address when sampled at the cross point
of the rising edge of CK and falling edge of . During a Read or Write command cycle, defines
the column address when sampled at the cross point of the rising edge of CK and falling edge of
. In addition to the column address, AP is used to invoke autoprecharge operation at the end of
the burst read or write cycle. If AP is high, autoprecharge is selected and BA0-BAn defines the
bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command
cycle, AP is used in conjunction with BA0-BAn to control which bank(s) to precharge. If AP is
high, all banks will be precharged regardless of the state of BA0-BAn inputs. If AP is low, then
BA0-BAn are used to define which bank to precharge.
DQ0 – DQ63
Input
-
Data Input/Output pins.
CB0 – CB7
I/O
-
Check bits are used for ECC.
VDD, VDDSPD, VSS
Supply
-
Power supplies for core, I/O, Serial Presence Detect, Temp sensor, and ground for the module.
VREFDQ, VREFCA
Supply
-
Reference voltage for SSTL15 inputs.
SDA
I/O
-
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM and temp sensor.
A resistor must be connected from the SDA bus line to VDDSPD on the system planar to act as a pull
up.
SCL
Input
-
This signal is used to clock data into and out of the SPD EEPROM and Temp sensor.
SA0 – SA2
Input
-
Address pins used to select the Serial Presence Detect and Temp sensor base address.
Output
-
The pin is reserved for use to flag critical module temperature.
Input
-
This signal resets the DDR3 SDRAM.
Par_In
Input
-
Parity bit for the Address and Control bus.
Output
-
Parity error detected on the Address and Control bus. A resistor may be connected from bus line
to VDD on the system planar to act as a pull up.
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 6
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram (Part 1 of 2)
[2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
D8
Notes :
1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. ZQ resistors are 240Ω ±1%. For all other resistor values refer to the appropriate wiring diagram.
ZQ
VDDSPD
VTT
VREFDQ
VREFCA
VDD
SPD
D0-D8
D0-D8
D0-D8
VSS
D0-D8
DQS
DQS8
PCK0A
RCKE0A
RODT0A
A[14:0]A/
BA[2:0]A
DM8/DQS17
CB[7:0]
TDQS
DQ[7:0]
CK
CKE
ODT
A[14:0]
BA[2:0]
D3
ZQDQS
DQS3
DM3/DQS12
DQ[31:24]
TDQS
DQ[7:0]
CK
CKE
ODT
D2
ZQDQS
DQS2
DM2/DQS11
DQ[23:16]
TDQS
DQ[7:0]
CK
CKE
ODT
D1
ZQDQS
DQS1
DM1/DQS10
DQ[15:8]
TDQS
DQ[7:0]
CK
CKE
ODT
D0
ZQDQS
DQS0
DM0/DQS9
DQ[7:0]
TDQS
DQ[7:0]
CKE
ODT
D4
ZQDQS
DQS4
PCK0A
RCKE0B
RODT0B
A[14:0]B/
BA[2:0]B
DM4/DQS13
DQ[39:32]
TDQS
DQ[7:0]
CK
CKE
ODT
D5
ZQDQS
DQS5
DM5/DQS14
DQ[47:40]
TDQS
DQ[7:0]
CK
CKE
ODT
D6
ZQDQS
DQS6
DM6/DQS15
DQ[55:48]
TDQS
DQ[7:0]
CK
CKE
ODT
D7
ZQDQS
DQS7
DM7/DQS16
DQ[63:56]
TDQS
DQ[7:0]
CKE
ODT
Vtt
Vtt
D0-D8
SPD w/ Integrated Thermal Sensor
SCL
SCL
SDA
SA0
SA1 A0
A1
A2
SA2
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
CK
CK
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 7
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram (Part 2 of 2)
[2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
Register / PLL
: SDRAMs D[3:0], D8
: SDRAMs D[7:4]
BA[2:0] RBA[2:0]A BA[2:0]: SDRAMs D[3:0], D8
RBA[2:0]B BA[2:0]: SDRAMs D[7:4]
A[14:0] RA[14:0]A A[14:0]: SDRAMs D[3:0], D8
RA[14:0]B A[14:0]: SDRAMs D[7:4]
: SDRAMs D[3:0], D8
: SDRAMs D[7:4]
: SDRAMs D[3:0], D8
: SDRAMs D[7:4]
: SDRAMs D[3:0], D8
: SDRAMs D[7:4]
CKE0 RCKE0A CKE0: SDRAMs D[3:0], D8
RCKE0B CKE0: SDRAMs D[7:4]
RODT0A ODT0: SDRAMs D[3:0], D8
RODT0B ODT0: SDRAMs D[7:4]
ODT0
CK0
PCK0A CK: SDRAMs D[3:0], D8
PCK0B CK: SDRAMs D[7:4]
: SDRAMs D[3:0], D8
: SDRAMs D[7:4]
CK1
PAR_IN
: SDRAMs D[8:0]
120Ω
±1%
120Ω
±5%
Note: S[3:2], CKE1, ODT1 are NC
(Unused register inputs ODT1 and CKE1 have a 330Ω resistor to ground)
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 8
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram (Part 1 of 2)
[4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs]
D8
Notes :
1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. ZQ resistors are 240Ω ± 1%. For all other resistor values refer to the appropriate wiring diagram.
3. Unless otherwise noted, resistor values are 15Ω ± 5%.
4. See the wiring diagrams for all resistors associated with the command, address and control bus.
ZQ
VDDSPD
VTT
VREFDQ
VREFCA
VDD
SPD
D0-D17
D0-D17
D0-D17
VSS
D0-D17
DQS
DQS8
PCK0A
RCKE0A
RODT0A
A[14:0]A/
BA[2:0]A
DM8/DQS17
CB[7:0]
TDQS
DQ[7:0]
CK
CKE
ODT
D3
DQS
DQS3
DM3/DQS12
DQ[31:24]
TDQS
DQ[7:0]
CK
CKE
ODT
D2
DQS
DQS2
DM2/DQS11
DQ[23:16]
TDQS
DQ[7:0]
CK
CKE
ODT
D1
DQS
DQS1
DM1/DQS10
DQ[15:8]
TDQS
DQ[7:0]
CK
CKE
ODT
D0
DQS
DQS0
DM0/DQS9
DQ[7:0]
TDQS
DQ[7:0]
CK
CKE
ODT
Vtt
D0-D17
SPD w/ Integrated Thermal Sensor
SCL
SCL
SDA
SA0
SA1 A0
A1
A2
SA2
ZQ
ZQ
ZQ
ZQ
D17
ZQ
DQS
PCK1A
RCKE1A
RODT1A
TDQS
DQ[7:0]
CK
CKE
ODT
D12
ZQ
DQS
TDQS
DQ[7:0]
CK
CKE
ODT
D11
ZQ
DQS
TDQS
DQ[7:0]
CK
CKE
ODT
D10
ZQ
DQS
TDQS
DQ[7:0]
CK
CKE
ODT
D9
ZQ
DQS
TDQS
DQ[7:0]
CK
CKE
ODT
D4
ZQ
DQS
DQS4
PCK0B
RCKE0B
RODT0B
A[14:0]B/
BA[2:0]B
DM4/DQS13
DQ[39:32]
TDQS
DQ[7:0]
CK
CKE
ODT
D5
DQS
DQS5
DM5/DQS14
DQ[47:40]
TDQS
DQ[7:0]
CK
CKE
ODT
D6
DQS
DQS6
DM6/DQS15
DQ[55:48]
TDQS
DQ[7:0]
CK
CKE
ODT
D7
DQS
DQS7
DM7/DQS16
DQ[63:56]
TDQS
DQ[7:0]
CKE
ODT
Vtt
ZQ
ZQ
ZQ
D13
ZQ
DQS
PCK1B
RCKE1B
RODT1B
TDQS
DQ[7:0]
CK
CKE
ODT
D14
ZQ
DQS
TDQS
DQ[7:0]
CK
CKE
ODT
D15
ZQ
DQS
TDQS
DQ[7:0]
CK
CKE
ODT
D16
ZQ
DQS
TDQS
DQ[7:0]
CKE
ODT
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
CK
CK
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 9
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram (Part 2 of 2)
[4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs]
Register / PLL
: SDRAMs D[3:0], D8
: SDRAMs D[7:4]
BA[2:0] RBA[2:0]A BA[2:0]: SDRAMs D[3:0], D[12:8], D17
RBA[2:0]B BA[2:0]: SDRAMs D[7:4], D[16:13]
A[14:0] RA[14:0]A A[14:0]: SDRAMs D[3:0], D[12:8], D17
RA[14:0]B A[14:0]: SDRAMs D[7:4], D[16:13]
: SDRAMs D[3:0], D[12:8], D17
: SDRAMs D[7:4], D[16:13]
: SDRAMs D[3:0], D[12:8], D17
: SDRAMs D[7:4], D[16:13]
: SDRAMs D[3:0], D[12:8], D17
: SDRAMs D[7:4], D[16:13]
CKE0 RCKE0A CKE0: SDRAMs D[3:0], D8
RCKE0B CKE0: SDRAMs D[7:4]
RODT0A ODT0: SDRAMs D[3:0], D8
RODT0B ODT0: SDRAMs D[7:4]
ODT0
CK0
PCK0A CK: SDRAMs D[3:0], D8
PCK0B CK: SDRAMs D[7:4]
: SDRAMs D[3:0], D8
: SDRAMs D[7:4]
CK1
PAR_IN
: SDRAMs D[17:0]
120Ω
±1%
120Ω
±5%
CKE1
: SDRAMs D[12:9], D17
: SDRAMs D[16:13]
RCKE1A CKE1: SDRAMs D[12:9], D17
RCKE1B CKE1: SDRAMs D[16:13]
RODT1A ODT1: SDRAMs D[12:9], D17
RODT1B ODT1: SDRAMs D[16:13]
ODT1
PCK1A CK: SDRAMs D[12:9], D17
PCK1B CK: SDRAMs D[16:13]
: SDRAMs D[12:9], D17
: SDRAMs D[16:13]
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 10
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram (Part 1 of 3)
[4GB – 1 Rank, 512Mx4 DDR3 SDRAMs]
D8
ZQDQS
DQS8
PCK0A
RCKE0A
RODT0A
A[14:0]A
BA[2:0]A
CB[3:0] DQ[4:0]
CK
CKE
ODT
A[14:0]
BA[2:0]
D3
ZQDQS
DQS3
DQ[27:24] DQ[4:0]
CK
CKE
ODT
A[14:0]
BA[2:0]
D2
ZQDQS
DQS2
DQ[19:16] DQ[4:0]
CK
CKE
ODT
A[14:0]
BA[2:0]
D1
ZQDQS
DQS1
DQ[11:8] DQ[4:0]
CK
CKE
ODT
A[14:0]
BA[2:0]
D0
ZQDQS
DQS0
DQ[3:0] DQ[4:0]
CK
CKE
ODT
A[14:0]
BA[2:0]
D17
ZQDQS
DQS17
CB[7:4] DQ[4:0]
CK
CKE
ODT
A[14:0]
BA[2:0]
D12
ZQDQS
DQS12
DQ[31:28] DQ[4:0]
CK
CKE
ODT
A[14:0]
BA[2:0]
D11
ZQDQS
DQS11
DQ[23:20] DQ[4:0]
CK
CKE
ODT
A[14:0]
BA[2:0]
D10
ZQDQS
DQS10
DQ[15:12] DQ[4:0]
CK
CKE
ODT
A[14:0]
BA[2:0]
Vtt
D9
ZQDQS
DQ[4:0]
CK
CKE
ODT
A[14:0]
BA[2:0]
DQS9
DQ[7:4]
DMVSS DMVSS
DMVSS DMVSS
DMVSS DMVSS
DMVSS DMVSS
DMVSS DMVSS
PCK0A
RCKE0A
RODT0A
A[14:0]A
BA[2:0]A
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 11
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram (Part 2 of 3)
[4GB – 1 Rank, 512Mx4 DDR3 SDRAMs]
D4
ZQDQS
DQS4
PCK0B
RCKE0B
RODT0B
A[14:0]B
BA[2:0]B
DQ[35:32] DQ[4:0]
CK
CKE
ODT
A[14:0]
BA[2:0]
D5
ZQDQS
DQS5
DQ[43:40] DQ[4:0]
CK
CKE
ODT
D6
ZQDQS
DQS6
DQ[51:48] DQ[4:0]
CK
CKE
ODT
D7
ZQDQS
DQS7
DQ[59:56] DQ[4:0]
CK
CKE
ODT
D13
ZQDQS
DQS13
DQ[39:36] DQ[4:0]
CK
CKE
ODT
D14
ZQDQS
DQS14
DQ[47:44] DQ[4:0]
CK
CKE
ODT
D15
ZQDQS
DQS15
DQ[55:52] DQ[4:0]
CK
CKE
ODT
D16
ZQDQS
DQS16
DQ[63:60] DQ[4:0]
CK
CKE
ODT
Vtt
VDDSPD
VTT
VREFDQ
VREFCA
VDD
SPD
D0-D17
D0-D17
D0-D17
VSS
D0-D17
D0-D17
SPD w/ Integrated Thermal Sensor
SCL
SCL SDA
SA0
SA1 A0
A1
A2
SA2
Notes :
1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. ZQ resistors are 240Ω ± 1%. For all other resistor values refer to the appropriate wiring diagram.
3. Unless otherwise noted, resistor values are 15Ω ± 5%.
4. See the wiring diagrams for all resistors associated with the command, address and control bus.
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
DMVSS DMVSS
DMVSS DMVSS
DMVSS DMVSS
DMVSS DMVSS
PCK0B
RCKE0B
RODT0B
A[14:0]B
BA[2:0]B
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 12
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram (Part 3 of 3)
[4GB – 1 Rank, 512Mx4 DDR3 SDRAMs]
Register / PLL
CS0_A: SDRAMs D[3:0], D[12:8], D17
CS0_B: SDRAMs D[7:4], D[16:13]
BA[2:0]
BA[2:0]A BA[2:0]: SDRAMs D[3:0], D[12:8],D17
BA[2:0]B BA[2:0]: SDRAMs D[7:4], D[16:13]
A[14:0]A
A[14:0]B
RAS: SDRAMs D[3:0], D[12:8], D17
RAS: SDRAMs D[7:4], D[16:13]
CAS: SDRAMs D[3:0], D[12:8], D17
CAS: SDRAMs D[7:4], D[16:13]
WE: SDRAMs D[3:0], D[12:8], D17
WE: SDRAMs D[7:4], D[16:13]
CKE0
RCKE0A CKE0: SDRAMs D[3:0], D[12:8], D17
RCKE0B CKE0: SDRAMs D[7:4], D[16:13]
RODT0A ODT0: SDRAMs D[3:0], D[12:8], D17
RODT0B ODT0: SDRAMs D[7:4], D[16:13]
ODT0
CK0
PCK0A CK: SDRAMs D[3:0], D[12:8], D17
PCK0B CK: SDRAMs D[7:4], D[16:13]
CK: SDRAMs D[3:0], D[12:8], D17
CK: SDRAMs D[7:4], D[16:13]
CK1
PAR_IN
: SDRAMs D[17:0]
120Ω
±1%
120Ω
±5%
CKE1
ODT1
A[14:0]
A[14:0]: SDRAMs D[3:0], D[12:8], D17
A[14:0]: SDRAMs D[7:4], D[16:13]
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 13
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram (Part 1 of 3)
[8GB – 2 Ranks, 512Mx4 DDR3 SDRAMs]
D17
DM
DQS
DQS17
PCK0A
RCKE0A
RODT0A
A[14:0]A/
BA[2:0]A
VSS
CB[7:4] DQ[3:0]
CK
CKE
ODT
D12
DQS
CK
CKE
ODT
Vtt
D35
DQS
PCK1A
RCKE1A
RODT1A
CK
CKE
ODT
D30
DQS
CK
CKE
ODT
Vtt
PCK0A
RCKE0A
RODT0A
A[14:0]A/
BA[2:0]A
PCK1A
RCKE1A
RODT1A
DM
DQ[3:0]
DQS12
VSS
DQ[31:28] DM
DQ[3:0] DM
DQ[3:0]
D11
DQS
CK
CKE
ODT
D29
DQS
CK
CKE
ODT
DQS11
VSS
DQ[23:20] DM
DQ[3:0] DM
DQ[3:0]
D10
DQS
CK
CKE
ODT
D28
DQS
CK
CKE
ODT
DQS10
VSS
DQ[15:12] DM
DQ[3:0] DM
DQ[3:0]
D0
DQS
CK
CKE
ODT
D18
DQS
CK
CKE
ODT
DQS0
VSS
DQ[3:0] DM
DQ[3:0] DM
DQ[3:0]
D8
DM
DQS
DQS8
VSS
CB[3:0] DQ[3:0]
CK
CKE
ODT
D26
DQS
CK
CKE
ODT
DM
DQ[3:0]
D3
DM
DQS
DQS3
VSS
DQ[27:24] DQ[3:0]
CK
CKE
ODT
D21
DQS
CK
CKE
ODT
DM
DQ[3:0]
D2
DM
DQS
DQS2
VSS
DQ[19:16] DQ[3:0]
CK
CKE
ODT
D20
DQS
CK
CKE
ODT
DM
DQ[3:0]
D1
DM
DQS
DQS1
VSS
DQ[11:8] DQ[3:0]
CK
CKE
ODT
D19
DQS
CK
CKE
ODT
DM
DQ[3:0]
D9
DM
DQS
DQS9
VSS
DQ[7:4] DQ[3:0]
CK
CKE
ODT
D27
DQS
CK
CKE
ODT
DM
DQ[3:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 14
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram (Part 2 of 3)
[8GB – 2 Ranks, 512Mx4 DDR3 SDRAMs]
D14
Notes :
1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. ZQ pins of each SDRAM are connected to individual RZQ resistors (240Ω ± 1%).
3. See the wiring diagrams for resistor values.
DM
VDDSPD
VTT
VREFDQ
VREFCA
VDD
SPD
D0-D35
D0-D35
D0-D35
VSS
D0-D35
DQS
DQS14
PCK0B
RCKE0B
RODT0B
A[14:0]B/
BA[2:0]B
VSS
DQ[47:44] DQ[3:0]
CK
CKE
ODT
D4
DQS
CK
CKE
ODT
Vtt
D0-D35
SPD w/ Integrated Thermal Sensor
SCL
SCL
SDA
SA0
SA1 A0
A1
A2
SA2
D22
DQS
PCK1B
RCKE1B
RODT1B
CK
CKE
ODT
D22
DQS
CK
CKE
ODT
PCK0B
RCKE0B
RODT0B
A[14:0]B/
BA[2:0]B
PCK1B
RCKE1B
RODT1B
DM
DQ[3:0]
DQS4
VSS
DQ[35:32] DM
DQ[3:0] DM
DQ[3:0]
D16
DQS
CK
CKE
ODT
D34
DQS
CK
CKE
ODT
DQS16
VSS
DQ[63:60] DM
DQ[3:0] DM
DQ[3:0]
D7
DQS
CK
CKE
ODT
D25
DQS
CK
CKE
ODT
DQS7
VSS
DQ[59:56] DM
DQ[3:0] DM
DQ[3:0]
D13
DM
DQS
DQS13
VSS
DQ[39:36] DQ[3:0]
CK
CKE
ODT
D31
DQS
CK
CKE
ODT
DM
DQ[3:0]
D5
DM
DQS
DQS5
VSS
DQ[43:40] DQ[3:0]
CK
CKE
ODT
D23
DQS
CK
CKE
ODT
DM
DQ[3:0]
D15
DM
DQS
DQS15
VSS
DQ[55:52] DQ[3:0]
CK
CKE
ODT
D33
DQS
CK
CKE
ODT
DM
DQ[3:0]
D6
DM
DQS
DQS6
VSS
DQ[51:48] DQ[3:0]
CK
CKE
ODT
D24
DQS
CK
CKE
ODT
DM
DQ[3:0]
Vtt
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 15
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram (Part 3 of 3)
[8GB – 2 Ranks, 512Mx4 DDR3 SDRAMs]
Register / PLL
: SDRAMs D[3:0], D[12:8], D17
: SDRAMs D[25:21], D[34:31]
BA[2:0] RBA[2:0]A BA[2:0]: SDRAMs D[3:0], D[12:8], D[21:17], D[30:26], D35
RBA[2:0]B BA[2:0]: SDRAMs D[7:4], D[16:13], D[25:22], D[34:31]
A[14:0] RA[14:0]A A[14:0]: SDRAMs D[3:0], D[12:8], D[21:17], D[30:26], D35
RA[14:0]B A[14:0]: SDRAMs D[7:4], D[16:13], D[25:22], D[34:31]
: SDRAMs D[3:0], D[12:8], D[21:17], D[30:26], D35
: SDRAMs D[7:4], D[16:13], D[25:22], D[34:31]
: SDRAMs D[3:0], D[12:8], D[21:17], D[30:26], D35
: SDRAMs D[7:4], D[16:13], D[25:22], D[34:31]
: SDRAMs D[3:0], D[12:8], D[21:17], D[30:26], D35
: SDRAMs D[7:4], D[16:13], D[25:22], D[34:31]
CKE0 RCKE0A CKE0: SDRAMs D[3:0], D[12:8], D17
RCKE0B CKE0: SDRAMs D[25:22], D[34:31]
RODT0A ODT0: SDRAMs D[3:0], D[12:8], D17
RODT0B ODT0: SDRAMs D[7:4], D[34:31]
ODT0
CK0
PCK0A CK: SDRAMs D[3:0], D[12:8], D17
PCK0B CK: SDRAMs D[25:22], D[34:31]
: SDRAMs D[3:0], D[12:8], D17
: SDRAMs D[25:22], D[34:31]
CK1
PAR_IN
: SDRAMs D[17:0], D[35:18]
120Ω
±1%
120Ω
±5%
CKE1
: SDRAMs D[21:18]B, D[30:26], D35
: SDRAMs D[7:4], D[16:13]
RCKE1A CKE1: SDRAMs D[21:18], D[30:26], D35
RCKE1B CKE1: SDRAMs D[7:4], D[16:13]
RODT1A ODT1: SDRAMs D[21:18], D[30:26], D35
RODT1B ODT1: SDRAMs D[7:4], D[16:13]
ODT1
PCK1A CK: SDRAMs D[21:18], D[30:26], D35
PCK1B CK: SDRAMs D[7:4], D[16:13]
: SDRAMs D[21:18], D[30:26], D35
: SDRAMs D[7:4], D[16:13]
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 16
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram (Part 1 of 5)
[16GB – 4 Ranks, 1Gx4 (DDP) DDR3 SDRAMs]
D9
DM
DQS
DQS8
APCK0A
ARCKE0A
ARODT0A
ARA[14:0]A
/ARBA[2:0]A
VSS
CB[3:0] DQ[3:0]
CK
CKE
ODT
Vtt
D8
DQS
ARCKE1A
VDD
CK
CKE
ODT
BPCK0A
BRCKE0A
BRODT1A
BRA[14:0]A
/BRBA[2:0]A
DM
DQ[3:0]
ZQ ZQVSS
VSS
D7
DM
DQS
DQS3
VSS
DQ[27:24] DQ[3:0]
CK
CKE
ODT
D6
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D5
DM
DQS
DQS2
VSS
DQ[19:16] DQ[3:0]
CK
CKE
ODT
D4
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D3
DM
DQS
DQS1
VSS
DQ[11:8] DQ[3:0]
CK
CKE
ODT
D2
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D1
DM
DQS
DQS0
VSS
DQ[3:0] DQ[3:0]
CK
CKE
ODT
D0
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D45
DM
DQS
DQ[3:0]
CK
CKE
ODT
D44
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSSVSS
D47
DM
DQS
DQ[3:0]
CK
CKE
ODT
D46
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D49
DM
DQS
DQ[3:0]
CK
CKE
ODT
D48
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSSVSS
D51
DM
DQS
DQ[3:0]
CK
CKE
ODT
D50
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
D53
DM
DQS
DQ[3:0]
CK
CKE
ODT
D52
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSSVSS
BRCKE1A
VDD
VSS
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 17
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram (Part 2 of 5)
[16GB – 4 Ranks, 1Gx4 (DDP) DDR3 SDRAMs]
D27
DM
DQS
DQS17
APCK1A
ARCKE0A
ARODT0A
ARA[14:0]A
/ARBA[2:0]A
VSS
CB[7:4] DQ[3:0]
CK
CKE
ODT
Vtt
D26
DQS
ARCKE1A
VDD
CK
CKE
ODT
BPCK1A
BRCKE0A
BRODT1A
BRA[14:0]A
/BRBA[2:0]A
DM
DQ[3:0]
ZQ ZQVSS
VSS
D25
DM
DQS
DQS12
VSS
DQ[31:28] DQ[3:0]
CK
CKE
ODT
D24
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D23
DM
DQS
DQS11
VSS
DQ[23:20] DQ[3:0]
CK
CKE
ODT
D22
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D21
DM
DQS
DQS10
VSS
DQ[15:12] DQ[3:0]
CK
CKE
ODT
D20
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D19
DM
DQS
DQS9
VSS
DQ[7:4] DQ[3:0]
CK
CKE
ODT
D18
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D63
DM
DQS
DQ[3:0]
CK
CKE
ODT
D62
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSSVSS
D65
DM
DQS
DQ[3:0]
CK
CKE
ODT
D64
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D67
DM
DQS
DQ[3:0]
CK
CKE
ODT
D66
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSSVSS
D69
DM
DQS
DQ[3:0]
CK
CKE
ODT
D68
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
D71
DM
DQS
DQ[3:0]
CK
CKE
ODT
D70
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSSVSS
BRCKE1A
VDD
VSS
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 18
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram (Part 3 of 5)
[16GB – 4 Ranks, 1Gx4 (DDP) DDR3 SDRAMs]
D11
DM
DQS
DQS4
APCK0B
ARCKE0B
ARODT0B
ARA[14:0]B
/ARBA[2:0]B
VSS
DQ[35:32] DQ[3:0]
CK
CKE
ODT
Vtt
D10
DQS
ARCKE1B
VDD
CK
CKE
ODT
BPCK0B
BRCKE0B
BRODT1B
BRA[14:0]B
/BRBA[2:0]B
DM
DQ[3:0]
ZQ ZQVSS
VSS
D13
DM
DQS
DQS5
VSS
DQ[43:40] DQ[3:0]
CK
CKE
ODT
D12
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D15
DM
DQS
DQS6
VSS
DQ[51:48] DQ[3:0]
CK
CKE
ODT
D14
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D17
DM
DQS
DQS7
VSS
DQ[59:56] DQ[3:0]
CK
CKE
ODT
D16
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D43
DM
DQS
DQ[3:0]
CK
CKE
ODT
D42
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSSVSS
D41
DM
DQS
DQ[3:0]
CK
CKE
ODT
D40
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D39
DM
DQS
DQ[3:0]
CK
CKE
ODT
D38
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSSVSS
D37
DM
DQS
DQ[3:0]
CK
CKE
ODT
D36
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
BRCKE1B
VDD
VSS
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
Functional Block Diagram (Part 4 of 5)
[16GB – 4 Ranks, 1Gx4 (DDP) DDR3 SDRAMs]
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 19
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
D29
DM
DQS
DQS13
APCK1B
ARCKE0B
ARODT0B
ARA[14:0]B
/ARBA[2:0]B
VSS
DQ[39:36] DQ[3:0]
CK
CKE
ODT
Vtt
D28
DQS
ARCKE1B
VDD
CK
CKE
ODT
BPCK1B
BRCKE0B
BRODT1B
BRA[14:0]B
/BRBA[2:0]B
DM
DQ[3:0]
ZQ ZQVSS
VSS
D31
DM
DQS
DQS14
VSS
DQ[47:44] DQ[3:0]
CK
CKE
ODT
D30
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D33
DM
DQS
DQS15
VSS
DQ[55:52] DQ[3:0]
CK
CKE
ODT
D32
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D35
DM
DQS
DQS16
VSS
DQ[63:60] DQ[3:0]
CK
CKE
ODT
D34
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D61
DM
DQS
DQ[3:0]
CK
CKE
ODT
D60
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSSVSS
D59
DM
DQS
DQ[3:0]
CK
CKE
ODT
D58
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
VSS
D57
DM
DQS
DQ[3:0]
CK
CKE
ODT
D56
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSSVSS
D55
DM
DQS
DQ[3:0]
CK
CKE
ODT
D54
DQS
CK
CKE
ODT
DM
DQ[3:0]
ZQ ZQVSS
BRCKE1B
VDD
VSS
Notes :
1. DQ-to-I/O wiring is may be changed within a nibble.
2, Resistor values are 15Ω ± 5%.
2. ZQ resistors are 240Ω ± 1%.
3. See the wiring diagrams for resistor values.
VDDSPD
VTT
VREFDQ
VREFCA
VDD
SPD
D0-D71
D0-D71
D0-D71
VSS
D0-D71
D0-D71
SPD w/ Integrated Thermal Sensor
SCL
SCL
SDA
SA0
SA1 A0
A1
A2
SA2
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
A[14:0]
BA[2:0]
Functional Block Diagram (Part 5 of 5)
[16GB – 4 Ranks, 1Gx4 (DDP) DDR3 SDRAMs]
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 20
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Register / PLL A
: SDRAMs D1, D3, D5, D7, D9, D19, D21, D23, D25, D27
: SDRAMs D11, D13, D15, D17, D29, D31, D33, D35
BA[2:0] ARBA[2:0]A BA[2:0]: SDRAMs D[9:0], D[27:18]
ARBA[2:0]B BA[2:0]: SDRAMs D[17:10], D[35:28]
A[14:0] ARA[14:0]A A[14:0]: SDRAMs D[9:0], D[27:18]
ARA[14:0]B A[14:0]: SDRAMs D[17:10], D[35:28]
: SDRAMs D[9:0], D[27:18]
: SDRAMs D[17:10], D[35:28]
: SDRAMs D[9:0], D[27:18]
: SDRAMs D[17:10], D[35:28]
: SDRAMs D[9:0], D[27:18]
: SDRAMs D[17:10], D[35:28]
CKE0 ARCKE0A CKE1: SDRAMs D1, D3, D5, D7, D9, D19, D21, D23, D25, D27
ARCKE0B CKE1: SDRAMs D11, D13, D15, D17, D29, D31, D33, D35
ARODT0A ODT1: SDRAMs D1, D3, D5, D7, D9, D19, D21, D23, D25, D27
ARODT0B ODT1: SDRAMs D11, D13, D15, D17, D29, D31, D33, D35
ODT0
CK0
APCK0A CK: SDRAMs D[9:0]
APCK0B CK: SDRAMs D[17:10]
: SDRAMs D[9:0]
: SDRAMs D[17:10]
CK1
PAR_IN
: SDRAMs D[71:0]
120Ω
±1%
120Ω
±5%
CKE1
: SDRAMs D0, D2, D4, D6, D8, D18, D20, D22, D24, D26
: SDRAMs D10, D12, D14, D16, D28, D30, D32, D34
ARCKE1A CKE0: SDRAMs D0, D2, D4, D6, D8, D18, D20, D22, D24, D26
ARCKE1B CKE0: SDRAMs D10, D12, D14, D16, D28, D30, D32, D34
APCK1A CK: SDRAMs D[27:18]
APCK1B CK: SDRAMs D[35:28]
: SDRAMs D[27:18]
: SDRAMs D[35:28]
Register / PLL B
BA[2:0]
A[14:0]
CKE0
CK0
CK1
PAR_IN
120Ω
±1%
120Ω
±5%
CKE1
ODT1
: SDRAMs D45, D47, D49, D51, D53, D63, D65, D67, D69, D71
: SDRAMs D37, D39, D41, D43, D55, D57, D59, D61
BRBA[2:0]A BA[2:0]: SDRAMs D[53:44], D[71:62]
BRBA[2:0]B BA[2:0]: SDRAMs D[43:36], D[61:54]
BRA[14:0]A A[14:0]: SDRAMs D[53:44], D[71:62]
BRA[14:0]B A[14:0]: SDRAMs D[43:36], D[61:54]
: SDRAMs D[53:44], D[71:62]
: SDRAMs D[43:36], D[61:54]
: SDRAMs D[53:44], D[71:62]
: SDRAMs D[43:36], D[61:54]
: SDRAMs D[53:44], D[71:62]
: SDRAMs D[43:36], D[61:54]
BRCKE0A CKE1: SDRAMs D45, D47, D49, D51, D53, D63, D65, D67, D69, D71
BRCKE0B CKE1: SDRAMs D37, D39, D41, D43, D55, D57, D59, D61
BRODT0A ODT1: SDRAMs D45, D47, D49, D51, D53, D63, D65, D67, D69, D71
BRODT0B ODT1: SDRAMs D37, D39, D41, D43, D55, D57, D59, D61
BPCK0A CK: SDRAMs D[53:44]
BPCK0B CK: SDRAMs D[43:36]
: SDRAMs D[53:44]
: SDRAMs D[43:36]
: SDRAMs D44, D46, D48, D50, D52, D62, D64, D66, D68, D70
: SDRAMs D36, D38, D40, D42, D54, D56, D58, D60
BRCKE1A CKE0: SDRAMs D44, D46, D48, D50, D52, D62, D64, D66, D68, D70
BRCKE1B CKE0: SDRAMs D36, D38, D40, D42, D54, D56, D58, D60
BPCK1A CK: SDRAMs D[71:62]
BPCK1B CK: SDRAMs D[61:54]
: SDRAMs D[71:62]
: SDRAMs D[61:54]
Serial Presence Detect [ 2GB – 1 Rank, 256Mx8 DDR3 SDRAMs, 1.5V]
Byte
Description
Serial PD Data Entry (Hex.)
-BE
-CG
0
CRC range, EEPROM bytes, bytes used
92
92
1
SPD revision
10
10
2
DRAM device type
0B
0B
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 21
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
3
Module type (form factor)
01
01
4
SDRAM Device density and banks
03
03
5
SDRAM device row and column count
19
19
6
Module minimum nominal voltage
00
00
7
Module ranks and device DQ count
01
01
8
ECC tag and module memory Bus width
0B
0B
9
Fine timebase dividend/divisor (in ps)
52
52
10
Medium timebase dividend
01
01
11
Medium timebase divisor
08
08
12
Minimum SDRAM cycle time (tCKmin)
0F
0C
13
Reserved
00
00
14
CAS latencies supported
1C
3C
15
CAS latencies supported
00
00
16
Minimum CAS latency time (tAAmin)
69
69
17
Minimum write recovery time (tWRmin)
78
78
18
Minimum -to- delay (tRCDmin)
69
69
19
Minimum Row Active to Row Active delay (tRRDmin)
3C
30
20
Minimum row Precharge delay (tRPmin)
69
69
21
Upper nibble for tRAS and tRC
11
11
22
Minimum Active-to-Precharge delay (tRASmin)
2C
20
23
Minimum Active-to-Active/Refresh delay (tRCmin)
95
89
24
Minimum refresh recovery delay (tRFCmin) LSB
00
00
25
Minimum refresh recovery delay (tRFCmin) MSB
05
05
26
Minimum internal Write-to-Read command delay (tWTRmin)
3C
3C
27
Minimum internal Read-to-Precharge command delay (tRTPmin)
3C
3C
28
Minimum four active window delay (tFAWmin) LSB
01
00
29
Minimum four active window delay (tFAWmin) MSB
2C
F0
30
SDRAM device output drivers supported
83
83
31
SDRAM device thermal and refresh options
05
05
32
Module Thermal Sensor
80
80
33
SDRAM Device Type
00
00
60
Module height (nominal)
0F
0F
61
Module thickness (Max)
11
11
62
Raw Card ID reference
20
20
63
DRAM address mapping edge connector
05
05
117
Module manufacture ID
83
83
118
Module manufacture ID
0B
0B
119-121
Module manufacturer Information
--
--
126
CRC
--
--
127
CRC
--
--
128-145
Module part number
--
--
146
Module die revision
--
--
147
Module PCB revision
--
--
150-175
Manufacturer reserved
--
--
176-255
Customer reserved
--
--
Note : Byte 65 and 66 are Register vendor code, please refer to as below rule
IDT : 80B3, Inphi : 04B3 and TI : 8097
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 22
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Serial Presence Detect [4GB – 2 Rank, 256Mx8 DDR3 SDRAMs, 1.5V]
Byte
Description
Serial PD Data Entry (Hex.)
-BE
-CG
0
CRC range, EEPROM bytes, bytes used
92
92
1
SPD revision
10
10
2
DRAM device type
0B
0B
3
Module type (form factor)
01
01
4
SDRAM Device density and banks
03
03
5
SDRAM device row and column count
19
19
6
Module minimum nominal voltage
00
00
7
Module ranks and device DQ count
09
09
8
ECC tag and module memory Bus width
0B
0B
9
Fine timebase dividend/divisor (in ps)
52
52
10
Medium timebase dividend
01
01
11
Medium timebase divisor
08
08
12
Minimum SDRAM cycle time (tCKmin)
0F
0C
13
Reserved
00
00
14
CAS latencies supported
1C
3C
15
CAS latencies supported
00
00
16
Minimum CAS latency time (tAAmin)
69
69
17
Minimum write recovery time (tWRmin)
78
78
18
Minimum -to- delay (tRCDmin)
69
69
19
Minimum Row Active to Row Active delay (tRRDmin)
3C
30
20
Minimum row Precharge delay (tRPmin)
69
69
21
Upper nibble for tRAS and tRC
11
11
22
Minimum Active-to-Precharge delay (tRASmin)
2C
20
23
Minimum Active-to-Active/Refresh delay (tRCmin)
95
89
24
Minimum refresh recovery delay (tRFCmin) LSB
00
00
25
Minimum refresh recovery delay (tRFCmin) MSB
05
05
26
Minimum internal Write-to-Read command delay (tWTRmin)
3C
3C
27
Minimum internal Read-to-Precharge command delay (tRTPmin)
3C
3C
28
Minimum four active window delay (tFAWmin) LSB
01
00
29
Minimum four active window delay (tFAWmin) MSB
2C
F0
30
SDRAM device output drivers supported
83
83
31
SDRAM device thermal and refresh options
05
05
32
Module Thermal Sensor
80
80
33
SDRAM Device Type
00
00
60
Module height (nominal)
0F
0F
61
Module thickness (Max)
11
11
62
Raw Card ID reference
01
01
63
DRAM address mapping edge connector
05
05
117
Module manufacture ID
83
83
118
Module manufacture ID
0B
0B
119-121
Module manufacturer Information
--
--
126
CRC
--
--
127
CRC
--
--
128-145
Module part number
--
--
146
Module die revision
--
--
147
Module PCB revision
--
--
150-175
Manufacturer reserved
--
--
176-255
Customer reserved
--
--
Note : Byte 65 and 66 are Register vendor code, please refer to as below rule
IDT : 80B3, Inphi : 04B3 and TI : 8097
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 23
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Serial Presence Detect [4GB – 1 Rank, 512Mx4 DDR3 SDRAMs, 1.5V]
Byte
Description
Serial PD Data Entry (Hex.)
-BE
-CG
0
CRC range, EEPROM bytes, bytes used
92
92
1
SPD revision
10
10
2
DRAM device type
0B
0B
3
Module type (form factor)
01
01
4
SDRAM Device density and banks
03
03
5
SDRAM device row and column count
1A
1A
6
Module minimum nominal voltage
00
00
7
Module ranks and device DQ count
00
00
8
ECC tag and module memory Bus width
0B
0B
9
Fine timebase dividend/divisor (in ps)
52
52
10
Medium timebase dividend
01
01
11
Medium timebase divisor
08
08
12
Minimum SDRAM cycle time (tCKmin)
0F
0C
13
Reserved
00
00
14
CAS latencies supported
1C
3C
15
CAS latencies supported
00
00
16
Minimum CAS latency time (tAAmin)
69
69
17
Minimum write recovery time (tWRmin)
78
78
18
Minimum -to- delay (tRCDmin)
69
69
19
Minimum Row Active to Row Active delay (tRRDmin)
3C
30
20
Minimum row Precharge delay (tRPmin)
69
69
21
Upper nibble for tRAS and tRC
11
11
22
Minimum Active-to-Precharge delay (tRASmin)
2C
20
23
Minimum Active-to-Active/Refresh delay (tRCmin)
95
89
24
Minimum refresh recovery delay (tRFCmin) LSB
00
00
25
Minimum refresh recovery delay (tRFCmin) MSB
05
05
26
Minimum internal Write-to-Read command delay (tWTRmin)
3C
3C
27
Minimum internal Read-to-Precharge command delay (tRTPmin)
3C
3C
28
Minimum four active window delay (tFAWmin) LSB
01
00
29
Minimum four active window delay (tFAWmin) MSB
2C
F0
30
SDRAM device output drivers supported
83
83
31
SDRAM device thermal and refresh options
05
05
32
Module Thermal Sensor
80
80
33
SDRAM Device Type
00
00
60
Module height (nominal)
0F
0F
61
Module thickness (Max)
11
11
62
Raw Card ID reference
22
22
63
DRAM address mapping edge connector
05
05
117
Module manufacture ID
83
83
118
Module manufacture ID
0B
0B
119-121
Module manufacturer Information
--
--
126
CRC
--
--
127
CRC
--
--
128-145
Module part number
--
--
146
Module die revision
--
--
147
Module PCB revision
--
--
150-175
Manufacturer reserved
--
--
176-255
Customer reserved
--
--
Note : Byte 65 and 66 are Register vendor code, please refer to as below rule
IDT : 80B3, Inphi : 04B3 and TI : 8097
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 24
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Serial Presence Detect [8GB – 2 Rank, 512Mx4 DDR3 SDRAMs, 1.5V]
Byte
Description
Serial PD Data Entry (Hex.)
-BE
-CG
0
CRC range, EEPROM bytes, bytes used
92
92
1
SPD revision
10
10
2
DRAM device type
0B
0B
3
Module type (form factor)
01
01
4
SDRAM Device density and banks
03
03
5
SDRAM device row and column count
1A
1A
6
Module minimum nominal voltage
00
00
7
Module ranks and device DQ count
08
08
8
ECC tag and module memory Bus width
0B
0B
9
Fine timebase dividend/divisor (in ps)
52
52
10
Medium timebase dividend
01
01
11
Medium timebase divisor
08
08
12
Minimum SDRAM cycle time (tCKmin)
0F
0C
13
Reserved
00
00
14
CAS latencies supported
1C
3C
15
CAS latencies supported
00
00
16
Minimum CAS latency time (tAAmin)
69
69
17
Minimum write recovery time (tWRmin)
78
78
18
Minimum -to- delay (tRCDmin)
69
69
19
Minimum Row Active to Row Active delay (tRRDmin)
3C
30
20
Minimum row Precharge delay (tRPmin)
69
69
21
Upper nibble for tRAS and tRC
11
11
22
Minimum Active-to-Precharge delay (tRASmin)
2C
20
23
Minimum Active-to-Active/Refresh delay (tRCmin)
95
89
24
Minimum refresh recovery delay (tRFCmin) LSB
00
00
25
Minimum refresh recovery delay (tRFCmin) MSB
05
05
26
Minimum internal Write-to-Read command delay (tWTRmin)
3C
3C
27
Minimum internal Read-to-Precharge command delay (tRTPmin)
3C
3C
28
Minimum four active window delay (tFAWmin) LSB
01
00
29
Minimum four active window delay (tFAWmin) MSB
2C
F0
30
SDRAM device output drivers supported
83
83
31
SDRAM device thermal and refresh options
05
05
32
Module Thermal Sensor
80
80
33
SDRAM Device Type
00
00
60
Module height (nominal)
0F
0F
61
Module thickness (Max)
33
33
62
Raw Card ID reference
24
24
63
DRAM address mapping edge connector
09
09
117
Module manufacture ID
83
83
118
Module manufacture ID
0B
0B
119-121
Module manufacturer Information
--
--
126
CRC
--
--
127
CRC
--
--
128-145
Module part number
--
--
146
Module die revision
--
--
147
Module PCB revision
--
--
150-175
Manufacturer reserved
--
--
176-255
Customer reserved
--
--
Note : Byte 65 and 66 are Register vendor code, please refer to as below rule
IDT : 80B3, Inphi : 04B3 and TI : 8097
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 25
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Serial Presence Detect [16GB – 4 Rank, 1024Mx4 DDR3 SDRAMs, 1.5V]
Byte
Description
Serial PD Data Entry (Hex.)
-BE
-CG
0
CRC range, EEPROM bytes, bytes used
92
--
1
SPD revision
10
--
2
DRAM device type
0B
--
3
Module type (form factor)
01
--
4
SDRAM Device density and banks
03
--
5
SDRAM device row and column count
1A
--
6
Module minimum nominal voltage
00
--
7
Module ranks and device DQ count
18
--
8
ECC tag and module memory Bus width
0B
--
9
Fine timebase dividend/divisor (in ps)
52
--
10
Medium timebase dividend
01
--
11
Medium timebase divisor
08
--
12
Minimum SDRAM cycle time (tCKmin)
0F
--
13
Reserved
00
--
14
CAS latencies supported
1C
--
15
CAS latencies supported
00
--
16
Minimum CAS latency time (tAAmin)
69
--
17
Minimum write recovery time (tWRmin)
78
--
18
Minimum -to- delay (tRCDmin)
69
--
19
Minimum Row Active to Row Active delay (tRRDmin)
3C
--
20
Minimum row Precharge delay (tRPmin)
69
--
21
Upper nibble for tRAS and tRC
11
--
22
Minimum Active-to-Precharge delay (tRASmin)
2C
--
23
Minimum Active-to-Active/Refresh delay (tRCmin)
95
--
24
Minimum refresh recovery delay (tRFCmin) LSB
00
--
25
Minimum refresh recovery delay (tRFCmin) MSB
05
--
26
Minimum internal Write-to-Read command delay (tWTRmin)
3C
--
27
Minimum internal Read-to-Precharge command delay (tRTPmin)
3C
--
28
Minimum four active window delay (tFAWmin) LSB
01
--
29
Minimum four active window delay (tFAWmin) MSB
2C
--
30
SDRAM device output drivers supported
83
--
31
SDRAM device thermal and refresh options
05
--
32
Module Thermal Sensor
80
--
33
SDRAM Device Type
80
--
60
Module height (nominal)
0F
--
61
Module thickness (Max)
33
--
62
Raw Card ID reference
05
--
63
DRAM address mapping edge connector
0A
--
117
Module manufacture ID
83
--
118
Module manufacture ID
0B
--
119-121
Module manufacturer Information
--
--
126
CRC
--
--
127
CRC
--
--
128-145
Module part number
--
--
146
Module die revision
--
--
147
Module PCB revision
--
--
150-175
Manufacturer reserved
--
--
176-255
Customer reserved
--
--
Note : Byte 65 and 66 are Register vendor code, please refer to as below rule
IDT : 80B3, Inphi : 04B3 and TI : 8097
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 26
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Serial Presence Detect [2GB – 1 Rank, 256Mx8 DDR3 SDRAMs, 1.35V]
Byte
Description
Serial PD Data Entry (Hex.)
-BE
-CG
0
CRC range, EEPROM bytes, bytes used
92
92
1
SPD revision
10
10
2
DRAM device type
0B
0B
3
Module type (form factor)
01
01
4
SDRAM Device density and banks
03
03
5
SDRAM device row and column count
19
19
6
Module minimum nominal voltage
02
02
7
Module ranks and device DQ count
01
01
8
ECC tag and module memory Bus width
0B
0B
9
Fine timebase dividend/divisor (in ps)
52
52
10
Medium timebase dividend
01
01
11
Medium timebase divisor
08
08
12
Minimum SDRAM cycle time (tCKmin)
0F
0C
13
Reserved
00
00
14
CAS latencies supported
1C
3C
15
CAS latencies supported
00
00
16
Minimum CAS latency time (tAAmin)
69
69
17
Minimum write recovery time (tWRmin)
78
78
18
Minimum -to- delay (tRCDmin)
69
69
19
Minimum Row Active to Row Active delay (tRRDmin)
3C
30
20
Minimum row Precharge delay (tRPmin)
69
69
21
Upper nibble for tRAS and tRC
11
11
22
Minimum Active-to-Precharge delay (tRASmin)
2C
20
23
Minimum Active-to-Active/Refresh delay (tRCmin)
95
89
24
Minimum refresh recovery delay (tRFCmin) LSB
00
00
25
Minimum refresh recovery delay (tRFCmin) MSB
05
05
26
Minimum internal Write-to-Read command delay (tWTRmin)
3C
3C
27
Minimum internal Read-to-Precharge command delay (tRTPmin)
3C
3C
28
Minimum four active window delay (tFAWmin) LSB
01
00
29
Minimum four active window delay (tFAWmin) MSB
2C
F0
30
SDRAM device output drivers supported
83
83
31
SDRAM device thermal and refresh options
05
05
32
Module Thermal Sensor
80
80
33
SDRAM Device Type
00
00
60
Module height (nominal)
0F
0F
61
Module thickness (Max)
11
11
62
Raw Card ID reference
20
20
63
DRAM address mapping edge connector
05
05
117
Module manufacture ID
83
83
118
Module manufacture ID
0B
0B
119-121
Module manufacturer Information
--
--
126
CRC
--
--
127
CRC
--
--
128-145
Module part number
--
--
146
Module die revision
--
--
147
Module PCB revision
--
--
150-175
Manufacturer reserved
--
--
176-255
Customer reserved
--
--
Note : Byte 65 and 66 are Register vendor code, please refer to as below rule
IDT : 80B3, Inphi : 04B3 and TI : 8097
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 27
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Serial Presence Detect [4GB – 2 Rank, 256Mx8 DDR3 SDRAMs, 1.35V]
Byte
Description
Serial PD Data Entry (Hex.)
-BE
-CG
0
CRC range, EEPROM bytes, bytes used
92
92
1
SPD revision
10
10
2
DRAM device type
0B
0B
3
Module type (form factor)
01
01
4
SDRAM Device density and banks
03
03
5
SDRAM device row and column count
19
19
6
Module minimum nominal voltage
02
02
7
Module ranks and device DQ count
09
09
8
ECC tag and module memory Bus width
0B
0B
9
Fine timebase dividend/divisor (in ps)
52
52
10
Medium timebase dividend
01
01
11
Medium timebase divisor
08
08
12
Minimum SDRAM cycle time (tCKmin)
0F
0C
13
Reserved
00
00
14
CAS latencies supported
1C
3C
15
CAS latencies supported
00
00
16
Minimum CAS latency time (tAAmin)
69
69
17
Minimum write recovery time (tWRmin)
78
78
18
Minimum -to- delay (tRCDmin)
69
69
19
Minimum Row Active to Row Active delay (tRRDmin)
3C
30
20
Minimum row Precharge delay (tRPmin)
69
69
21
Upper nibble for tRAS and tRC
11
11
22
Minimum Active-to-Precharge delay (tRASmin)
2C
20
23
Minimum Active-to-Active/Refresh delay (tRCmin)
95
89
24
Minimum refresh recovery delay (tRFCmin) LSB
00
00
25
Minimum refresh recovery delay (tRFCmin) MSB
05
05
26
Minimum internal Write-to-Read command delay (tWTRmin)
3C
3C
27
Minimum internal Read-to-Precharge command delay (tRTPmin)
3C
3C
28
Minimum four active window delay (tFAWmin) LSB
01
00
29
Minimum four active window delay (tFAWmin) MSB
2C
F0
30
SDRAM device output drivers supported
83
83
31
SDRAM device thermal and refresh options
05
05
32
Module Thermal Sensor
80
80
33
SDRAM Device Type
00
00
60
Module height (nominal)
0F
0F
61
Module thickness (Max)
11
11
62
Raw Card ID reference
01
01
63
DRAM address mapping edge connector
05
05
117
Module manufacture ID
83
83
118
Module manufacture ID
0B
0B
119-121
Module manufacturer Information
--
--
126
CRC
--
--
127
CRC
--
--
128-145
Module part number
--
--
146
Module die revision
--
--
147
Module PCB revision
--
--
150-175
Manufacturer reserved
--
--
176-255
Customer reserved
--
--
Note : Byte 65 and 66 are Register vendor code, please refer to as below rule
IDT : 80B3, Inphi : 04B3 and TI : 8097
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 28
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Serial Presence Detect [4GB – 1 Rank, 512Mx4 DDR3 SDRAMs, 1.35V]
Byte
Description
Serial PD Data Entry (Hex.)
-BE
-CG
0
CRC range, EEPROM bytes, bytes used
92
92
1
SPD revision
10
10
2
DRAM device type
0B
0B
3
Module type (form factor)
01
01
4
SDRAM Device density and banks
03
03
5
SDRAM device row and column count
1A
1A
6
Module minimum nominal voltage
02
02
7
Module ranks and device DQ count
00
00
8
ECC tag and module memory Bus width
0B
0B
9
Fine timebase dividend/divisor (in ps)
52
52
10
Medium timebase dividend
01
01
11
Medium timebase divisor
08
08
12
Minimum SDRAM cycle time (tCKmin)
0F
0C
13
Reserved
00
00
14
CAS latencies supported
1C
3C
15
CAS latencies supported
00
00
16
Minimum CAS latency time (tAAmin)
69
69
17
Minimum write recovery time (tWRmin)
78
78
18
Minimum -to- delay (tRCDmin)
69
69
19
Minimum Row Active to Row Active delay (tRRDmin)
3C
30
20
Minimum row Precharge delay (tRPmin)
69
69
21
Upper nibble for tRAS and tRC
11
11
22
Minimum Active-to-Precharge delay (tRASmin)
2C
20
23
Minimum Active-to-Active/Refresh delay (tRCmin)
95
89
24
Minimum refresh recovery delay (tRFCmin) LSB
00
00
25
Minimum refresh recovery delay (tRFCmin) MSB
05
05
26
Minimum internal Write-to-Read command delay (tWTRmin)
3C
3C
27
Minimum internal Read-to-Precharge command delay (tRTPmin)
3C
3C
28
Minimum four active window delay (tFAWmin) LSB
01
00
29
Minimum four active window delay (tFAWmin) MSB
2C
F0
30
SDRAM device output drivers supported
83
83
31
SDRAM device thermal and refresh options
05
05
32
Module Thermal Sensor
80
80
33
SDRAM Device Type
00
00
60
Module height (nominal)
0F
0F
61
Module thickness (Max)
11
11
62
Raw Card ID reference
22
22
63
DRAM address mapping edge connector
05
05
117
Module manufacture ID
83
83
118
Module manufacture ID
0B
0B
119-121
Module manufacturer Information
--
--
126
CRC
--
--
127
CRC
--
--
128-145
Module part number
--
--
146
Module die revision
--
--
147
Module PCB revision
--
--
150-175
Manufacturer reserved
--
--
176-255
Customer reserved
--
--
Note : Byte 65 and 66 are Register vendor code, please refer to as below rule
IDT : 80B3, Inphi : 04B3 and TI : 8097
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 29
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Serial Presence Detect [8GB – 2 Rank, 512Mx4 DDR3 SDRAMs, 1.35V]
Byte
Description
Serial PD Data Entry (Hex.)
-BE
-CG
0
CRC range, EEPROM bytes, bytes used
92
92
1
SPD revision
10
10
2
DRAM device type
0B
0B
3
Module type (form factor)
01
01
4
SDRAM Device density and banks
03
03
5
SDRAM device row and column count
1A
1A
6
Module minimum nominal voltage
02
02
7
Module ranks and device DQ count
08
08
8
ECC tag and module memory Bus width
0B
0B
9
Fine timebase dividend/divisor (in ps)
52
52
10
Medium timebase dividend
01
01
11
Medium timebase divisor
08
08
12
Minimum SDRAM cycle time (tCKmin)
0F
0C
13
Reserved
00
00
14
CAS latencies supported
1C
3C
15
CAS latencies supported
00
00
16
Minimum CAS latency time (tAAmin)
69
69
17
Minimum write recovery time (tWRmin)
78
78
18
Minimum -to- delay (tRCDmin)
69
69
19
Minimum Row Active to Row Active delay (tRRDmin)
3C
30
20
Minimum row Precharge delay (tRPmin)
69
69
21
Upper nibble for tRAS and tRC
11
11
22
Minimum Active-to-Precharge delay (tRASmin)
2C
20
23
Minimum Active-to-Active/Refresh delay (tRCmin)
95
89
24
Minimum refresh recovery delay (tRFCmin) LSB
00
00
25
Minimum refresh recovery delay (tRFCmin) MSB
05
05
26
Minimum internal Write-to-Read command delay (tWTRmin)
3C
3C
27
Minimum internal Read-to-Precharge command delay (tRTPmin)
3C
3C
28
Minimum four active window delay (tFAWmin) LSB
01
00
29
Minimum four active window delay (tFAWmin) MSB
2C
F0
30
SDRAM device output drivers supported
83
83
31
SDRAM device thermal and refresh options
05
05
32
Module Thermal Sensor
80
80
33
SDRAM Device Type
00
00
60
Module height (nominal)
0F
0F
61
Module thickness (Max)
33
33
62
Raw Card ID reference
24
24
63
DRAM address mapping edge connector
09
09
117
Module manufacture ID
83
83
118
Module manufacture ID
0B
0B
119-121
Module manufacturer Information
--
--
126
CRC
--
--
127
CRC
--
--
128-145
Module part number
--
--
146
Module die revision
--
--
147
Module PCB revision
--
--
150-175
Manufacturer reserved
--
--
176-255
Customer reserved
--
--
Note : Byte 65 and 66 are Register vendor code, please refer to as below rule
IDT : 80B3, Inphi : 04B3 and TI : 8097
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 30
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Serial Presence Detect [16GB – 4 Rank, 1024Mx4 DDR3 SDRAMs, 1.35V]
Byte
Description
Serial PD Data Entry (Hex.)
-BE
-CG
0
CRC range, EEPROM bytes, bytes used
92
--
1
SPD revision
10
--
2
DRAM device type
0B
--
3
Module type (form factor)
01
--
4
SDRAM Device density and banks
03
--
5
SDRAM device row and column count
1A
--
6
Module minimum nominal voltage
02
--
7
Module ranks and device DQ count
18
--
8
ECC tag and module memory Bus width
0B
--
9
Fine timebase dividend/divisor (in ps)
52
--
10
Medium timebase dividend
01
--
11
Medium timebase divisor
08
--
12
Minimum SDRAM cycle time (tCKmin)
0F
--
13
Reserved
00
--
14
CAS latencies supported
1C
--
15
CAS latencies supported
00
--
16
Minimum CAS latency time (tAAmin)
69
--
17
Minimum write recovery time (tWRmin)
78
--
18
Minimum -to- delay (tRCDmin)
69
--
19
Minimum Row Active to Row Active delay (tRRDmin)
3C
--
20
Minimum row Precharge delay (tRPmin)
69
--
21
Upper nibble for tRAS and tRC
11
--
22
Minimum Active-to-Precharge delay (tRASmin)
2C
--
23
Minimum Active-to-Active/Refresh delay (tRCmin)
95
--
24
Minimum refresh recovery delay (tRFCmin) LSB
00
--
25
Minimum refresh recovery delay (tRFCmin) MSB
05
--
26
Minimum internal Write-to-Read command delay (tWTRmin)
3C
--
27
Minimum internal Read-to-Precharge command delay (tRTPmin)
3C
--
28
Minimum four active window delay (tFAWmin) LSB
01
--
29
Minimum four active window delay (tFAWmin) MSB
2C
--
30
SDRAM device output drivers supported
83
--
31
SDRAM device thermal and refresh options
05
--
32
Module Thermal Sensor
80
--
33
SDRAM Device Type
80
--
60
Module height (nominal)
0F
--
61
Module thickness (Max)
33
--
62
Raw Card ID reference
05
--
63
DRAM address mapping edge connector
0A
--
117
Module manufacture ID
83
--
118
Module manufacture ID
0B
--
119-121
Module manufacturer Information
--
--
126
CRC
--
--
127
CRC
--
--
128-145
Module part number
--
--
146
Module die revision
--
--
147
Module PCB revision
--
--
150-175
Manufacturer reserved
--
--
176-255
Customer reserved
--
--
Note : Byte 65 and 66 are Register vendor code, please refer to as below rule
IDT : 80B3, Inphi : 04B3 and TI : 8097
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 31
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Environmental Requirements
Symbol
Parameter
Rating
Units
Note
TOPR
Module Operating Temperature Range (ambient)
0 to 55
°C
3
HOPR
Operating Humidity (relative)
10 to 90
%
1
TSTG
Storage Temperature (Plastic)
-55 to 100
°C
1
HSTG
Storage Humidity (without condensation)
5 to 95
%
1
PBAR
Barometric Pressure (operating & storage)
105 to 69
K Pascal
1, 2
Note:
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only and device functional
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
2. Up to 9850 ft.
3. The component maximum case temperature shall not exceed the value specified in the component spec.
Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Note
VDD
Voltage on VDD pins relative to Vss
-0.4 V ~ 1.975 V
V
1, 3
VDDQ
Voltage on VDDQ pins relative to Vss
-0.4 V ~ 1.975 V
V
1, 3
VIN, VOUT
Voltage on I/O pins relative to Vss
-0.4 V ~ 1.975 V
V
1
TSTG
Storage Temperature
-55 to +100
°C
1, 2
Note:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM.
3. VDD and VDDQ must be within 300 mV of each other at all times;and VREF must be not greater
Operating temperature Conditions
Symbol
Parameter
Rating
Units
Note
TOPER
Normal Operating Temperature Range
0 to 85
°C
1, 2
Extended Temperature Range (Optional)
85 to 95
°C
1, 3
Note:
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the
DRAM case temperature must be maintained between 0 to 85 °C under all operating conditions
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85 °C and 95 °C case temperature. Full
specifications are supported in this range, but the following additional conditions apply:
a) Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 μs. It is also possible to specify
a component with 1X refresh (tREFI to 7.8μs) in the Extended Temperature Range. Please refer to supplier data sheet and/or the
DIMM SPD for option availability.
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh
mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b) or enable the optional Auto Self-Refresh mode
(MR2 A6 = 1b and MR2 A7 = 0b). Please refer to the supplier data sheet and/or the DIMM SPD for Auto Self-Refresh option
availability, Extended Temperature Range support and tREFI requirements in the Extended Temperature Range.
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 32
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
DC Electrical Characteristics and Operating Conditions
Symbol
Parameter
Min
Type
Max
Units
Notes
VDD
Supply Voltage
1.425
1.5
1.575
V
1,2
VDDQ
Output Supply Voltage
1.425
1.5
1.575
V
1,2
VDD
Supply Voltage
1.25
1.35
1.4175
V
DDR3L
VDDQ
Output Supply Voltage
1.25
1.35
1.4175
V
DDR3L
Note:
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
Single-Ended AC and DC Input Levels for Command and Address
Symbol
Parameter
DDR3-1066 (-BE)
DDR3-1333 (-CG)
Units
Note
Min.
Max.
Min.
Max.
VIH.CA(DC)
DC Input Logic High
Vref + 0.100
VDD
Vref + 0.100
VDD
V
1
VIL.CA(DC)
DC Input Logic Low
VSS
Vref - 0.100
VSS
Vref - 0.100
V
1
VIH.CA(AC)
AC Input Logic High
Vref + 0.175
Note 2
Vref + 0.175
Note 2
V
1, 2
VIL.CA(AC)
AC Input Logic Low
Note 2
Vref - 0.175
Note 2
Vref - 0.175
V
1, 2
VIH.CA(AC150)
AC Input Logic High
-
-
Vref + 0.15
Note 2
V
1, 2
VIL.CA(AC150)
AC Input Logic Low
-
-
Note 2
Vref - 0.15
V
1, 2
VRefCA(DC)
Reference Voltage for
ADD, CMD Inputs
0.49 x VDD
0.51 x VDD
0.49 x VDD
0.51 x VDD
V
3, 4
Note:
1. For input only pins except . Vref = VrefCA(DC).
2. See “Overshoot and Undershoot Specifications” in the device datasheet.
3. The ac peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than +/-1% VDD (for reference: approx. +/- 15 mV).
4. For reference: approx. VDD/2 +/- 15 mV.
Single-Ended AC and DC Input Levels for DQ and DM
Symbol
Parameter
DDR3-1066 (-BE)
DDR3-1333 (-CG)
Units
Note
Min.
Max.
Min.
Max.
VIH.DQ(DC)
DC Input Logic High
Vref + 0.100
VDD
Vref + 0.100
VDD
V
1
VIL.DQ(DC)
DC Input Logic Low
VSS
Vref - 0.100
VSS
Vref - 0.100
V
1
VIH.DQ(AC)
AC Input Logic High
Vref + 0.175
Note 2
Vref + 0.15
Note 2
V
1, 2, 5
VIL.DQ(AC)
AC Input Logic Low
Note 2
Vref - 0.175
Note 2
Vref - 0.15
V
1, 2, 5
VRefDQ(DC)
Reference Voltage for
DQ, DM Inputs
0.49 x VDD
0.51 x VDD
0.49 x VDD
0.51 x VDD
V
3, 4
Note:
1. For input only pins except . Vref = VrefDQ(DC).
2. See “Overshoot and Undershoot Specifications” in the device datasheet.
3. The ac peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than +/-1% VDD (for reference: approx. +/- 15 mV).
4. For reference: approx. VDD/2 +/- 15 mV.
5. Single-ended swing requirement for DQS, DQS# is 350 mV (peak to peak). Differential swing requirement for DQS - DQS# is 700 mV
(peak to peak).
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 33
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Operating, Standby, and Refresh Currents
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.5V ± 0.075V [2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
PC3-10600
Unit
(-BE)
(-CG)
IDD0
Operating One Bank Active-Precharge Current
649
697
mA
IDD1
Operating One Bank Active-Read-Precharge Current
816
879
mA
IDD2P1
Precharge Power-Down Current Fast Exit
117
135
mA
IDD2Q
Precharge Quiet Standby Current
187
214
mA
IDD2N
Precharge Standby Current
205
238
mA
IDD3P
Active Power-Down Current
128
145
mA
IDD3N
Active Standby Current
265
265
mA
IDD4R
Operating Burst Read Current
1137
1370
mA
IDD4W
Operating Burst Write Current
1156
1378
mA
IDD5B
Burst Refresh Current
1723
1733
mA
IDD6
Self Refresh Current: Normal Temperature Range
94
94
mA
IDD7
Operating Bank Interleave Read Current
2914
3552
mA
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.35V+0.0675/-0.1V [2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
PC3-10600
Unit
(-BE)
(-CG)
IDD0
Operating One Bank Active-Precharge Current
634
673
mA
IDD1
Operating One Bank Active-Read-Precharge Current
780
836
mA
IDD2P1
Precharge Power-Down Current Fast Exit
103
117
mA
IDD2Q
Precharge Quiet Standby Current
157
177
mA
IDD2N
Precharge Standby Current
172
193
mA
IDD3P
Active Power-Down Current
111
125
mA
IDD3N
Active Standby Current
228
228
mA
IDD4R
Operating Burst Read Current
1119
1346
mA
IDD4W
Operating Burst Write Current
1139
1356
mA
IDD5B
Burst Refresh Current
1663
1673
mA
IDD6
Self Refresh Current: Normal Temperature Range
74
74
mA
IDD7
Operating Bank Interleave Read Current
2822
3406
mA
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 34
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.5V ± 0.075V [4GB – 2 Rank, 256Mx8 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
PC3-10600
Unit
(-BE)
(-CG)
IDD0
Operating One Bank Active-Precharge Current
915
962
mA
IDD1
Operating One Bank Active-Read-Precharge Current
1081
1144
mA
IDD2P1
Precharge Power-Down Current Fast Exit
235
269
mA
IDD2Q
Precharge Quiet Standby Current
375
428
mA
IDD2N
Precharge Standby Current
409
475
mA
IDD3P
Active Power-Down Current
256
290
mA
IDD3N
Active Standby Current
531
531
mA
IDD4R
Operating Burst Read Current
1402
1635
mA
IDD4W
Operating Burst Write Current
1422
1643
mA
IDD5B
Burst Refresh Current
1988
1998
mA
IDD6
Self Refresh Current: Normal Temperature Range
187
187
mA
IDD7
Operating Bank Interleave Read Current
3179
3817
mA
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.35V+0.0675/-0.1V [4GB – 2 Rank, 256Mx8 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
PC3-10600
Unit
(-BE)
(-CG)
IDD0
Operating One Bank Active-Precharge Current
863
902
mA
IDD1
Operating One Bank Active-Read-Precharge Current
1010
1064
mA
IDD2P1
Precharge Power-Down Current Fast Exit
206
235
mA
IDD2Q
Precharge Quiet Standby Current
314
354
mA
IDD2N
Precharge Standby Current
343
385
mA
IDD3P
Active Power-Down Current
222
251
mA
IDD3N
Active Standby Current
457
457
mA
IDD4R
Operating Burst Read Current
1348
1575
mA
IDD4W
Operating Burst Write Current
1368
1585
mA
IDD5B
Burst Refresh Current
1893
1901
mA
IDD6
Self Refresh Current: Normal Temperature Range
148
148
mA
IDD7
Operating Bank Interleave Read Current
3051
3634
mA
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 35
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.5V ± 0.075V [4GB – 1 Rank, 512Mx4 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
PC3-10600
Unit
(-BE)
(-CG)
IDD0
Operating One Bank Active-Precharge Current
1307
1402
mA
IDD1
Operating One Bank Active-Read-Precharge Current
1624
1734
mA
IDD2P1
Precharge Power-Down Current Fast Exit
285
325
mA
IDD2Q
Precharge Quiet Standby Current
428
483
mA
IDD2N
Precharge Standby Current
467
523
mA
IDD3P
Active Power-Down Current
317
356
mA
IDD3N
Active Standby Current
491
554
mA
IDD4R
Operating Burst Read Current
2202
2645
mA
IDD4W
Operating Burst Write Current
2154
2574
mA
IDD5B
Burst Refresh Current
3366
3445
mA
IDD6
Self Refresh Current: Normal Temperature Range
135
135
mA
IDD7
Operating Bank Interleave Read Current
5655
6930
mA
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.35V+0.0675/-0.1V [4GB – 1 Rank, 512Mx4 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
PC3-10600
Unit
(-BE)
(-CG)
IDD0
Operating One Bank Active-Precharge Current
1283
1378
mA
IDD1
Operating One Bank Active-Read-Precharge Current
1600
1711
mA
IDD2P1
Precharge Power-Down Current Fast Exit
285
317
mA
IDD2Q
Precharge Quiet Standby Current
420
475
mA
IDD2N
Precharge Standby Current
459
515
mA
IDD3P
Active Power-Down Current
309
348
mA
IDD3N
Active Standby Current
483
546
mA
IDD4R
Operating Burst Read Current
2075
2487
mA
IDD4W
Operating Burst Write Current
2123
2534
mA
IDD5B
Burst Refresh Current
3263
3334
mA
IDD6
Self Refresh Current: Normal Temperature Range
135
135
mA
IDD7
Operating Bank Interleave Read Current
5536
6780
mA
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 36
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.5V ± 0.075V [8GB – 2 Rank, 512Mx4 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
PC3-10600
Unit
(-BE)
(-CG)
IDD0
Operating One Bank Active-Precharge Current
1798
1956
mA
IDD1
Operating One Bank Active-Read-Precharge Current
2115
2289
mA
IDD2P1
Precharge Power-Down Current Fast Exit
570
649
mA
IDD2Q
Precharge Quiet Standby Current
855
966
mA
IDD2N
Precharge Standby Current
935
1045
mA
IDD3P
Active Power-Down Current
634
713
mA
IDD3N
Active Standby Current
982
1109
mA
IDD4R
Operating Burst Read Current
2693
3200
mA
IDD4W
Operating Burst Write Current
2645
3128
mA
IDD5B
Burst Refresh Current
3857
4000
mA
IDD6
Self Refresh Current: Normal Temperature Range
269
269
mA
IDD7
Operating Bank Interleave Read Current
6146
7484
mA
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.35V+0.0675/-0.1V [8GB – 2 Rank, 512Mx4 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
PC3-10600
Unit
(-BE)
(-CG)
IDD0
Operating One Bank Active-Precharge Current
1766
1925
mA
IDD1
Operating One Bank Active-Read-Precharge Current
2083
2257
mA
IDD2P1
Precharge Power-Down Current Fast Exit
570
634
mA
IDD2Q
Precharge Quiet Standby Current
840
950
mA
IDD2N
Precharge Standby Current
919
1030
mA
IDD3P
Active Power-Down Current
618
697
mA
IDD3N
Active Standby Current
966
1093
mA
IDD4R
Operating Burst Read Current
2558
3033
mA
IDD4W
Operating Burst Write Current
2606
3081
mA
IDD5B
Burst Refresh Current
3746
3881
mA
IDD6
Self Refresh Current: Normal Temperature Range
269
269
mA
IDD7
Operating Bank Interleave Read Current
6019
7326
mA
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 37
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.5V ± 0.075V [16GB – 4 Rank, 1024Mx4 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
PC3-10600
Unit
(-BE)
(-CG)
IDD0
Operating One Bank Active-Precharge Current
2780
3065
mA
IDD1
Operating One Bank Active-Read-Precharge Current
3097
3398
mA
IDD2P1
Precharge Power-Down Current Fast Exit
1140
1299
mA
IDD2Q
Precharge Quiet Standby Current
1711
1932
mA
IDD2N
Precharge Standby Current
1869
2091
mA
IDD3P
Active Power-Down Current
1267
1426
mA
IDD3N
Active Standby Current
1964
2218
mA
IDD4R
Operating Burst Read Current
3675
4308
mA
IDD4W
Operating Burst Write Current
3627
4237
mA
IDD5B
Burst Refresh Current
4839
5108
mA
IDD6
Self Refresh Current: Normal Temperature Range
539
539
mA
IDD7
Operating Bank Interleave Read Current
7128
8593
mA
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.35V+0.0675/-0.1V [16GB – 4 Rank, 1024Mx4 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
PC3-10600
Unit
(-BE)
(-CG)
IDD0
Operating One Bank Active-Precharge Current
2732
3018
mA
IDD1
Operating One Bank Active-Read-Precharge Current
3049
3350
mA
IDD2P1
Precharge Power-Down Current Fast Exit
1140
1267
mA
IDD2Q
Precharge Quiet Standby Current
1679
1901
mA
IDD2N
Precharge Standby Current
1837
2059
mA
IDD3P
Active Power-Down Current
1236
1394
mA
IDD3N
Active Standby Current
1932
2186
mA
IDD4R
Operating Burst Read Current
3524
4126
mA
IDD4W
Operating Burst Write Current
3572
4174
mA
IDD5B
Burst Refresh Current
4712
4974
mA
IDD6
Self Refresh Current: Normal Temperature Range
539
539
mA
IDD7
Operating Bank Interleave Read Current
6985
8419
mA
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 38
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Standard Speed Bins
DDR3-1066MHz
Speed Bin
DDR3-1066
Unit
CL-nRCD-nRP
7-7-7 (-BE)
8-8-8 (-BF)
Parameter
Symbol
Min
Max
Min
Max.
Internal read command to first data
tAA
13.125
20.000
15.000
20.000
ns
ACT to internal read or write delay time
tRCD
13.125
-
15.000
-
ns
PRE command period
tRP
13.125
-
15.000
-
ns
ACT to ACT or REF command period
tRC
50.625
-
52.500
-
ns
ACT to PRE command period
tRAS
37.500
9*tREFI
37.500
9*tREFI
ns
CL=5
CWL=5
tCK(AVG)
3.000
3.300
3.000
3.300
ns
CWL=6
tCK(AVG)
Reserved
Reserved
ns
CL=6
CWL=5
tCK(AVG)
2.500
3.300
2.500
3.300
ns
CWL=6
tCK(AVG)
Reserved
Reserved
ns
CL=7
CWL=5
tCK(AVG)
Reserved
Reserved
ns
CWL=6
tCK(AVG)
1.875
<2.5
Reserved
ns
CL=8
CWL=5
tCK(AVG)
Reserved
Reserved
ns
CWL=6
tCK(AVG)
1.875
<2.5
1.875
<2.5
ns
Supported CL Settings
6,7,8
6,8
nCK
Supported CWL Settings
5,6
5,6
nCK
DDR3-1333MHz
Speed Bin
DDR3-1333
Unit
CL-nRCD-nRP
8-8-8 (-CF)
9-9-9 (-CG)
Parameter
Symbol
Min
Max
Min
Max
Internal read command to first data
tAA
12.000
20.000
13.125
(13.125)5,11
20.000
ns
ACT to internal read or write delay time
tRCD
12.000
-
13.125
(13.125)5,11
-
ns
PRE command period
tRP
12.000
-
13.125
(13.125)5,11
-
ns
ACT to ACT or REF command period
tRC
48.000
-
49.125
(49.125)5,11
-
ns
ACT to PRE command period
tRAS
36.000
9*tREFI
36.000
9*tREFI
ns
CL=5
CWL=5
tCK(AVG)
2.500
3.300
Reserved
Reserved
ns
CWL=6
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=7
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CL=6
CWL=5
tCK(AVG)
2.500
3.300
2.500
3.300
ns
CWL=6
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=7
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CL=7
CWL=5
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=6
tCK(AVG)
1.875
<2.5
1.875*
<2.5*
ns
CWL=7
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CL=8
CWL=5
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=6
tCK(AVG)
1.875
<2.5
1.875
<2.5
ns
CWL=7
tCK(AVG)
1.500
<1.875
Reserved
Reserved
ns
CL=9
CWL=5
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=6
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=7
tCK(AVG)
1.500
<1.875
1.500
<1.875
ns
CL=10
CWL=5
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=6
tCK(AVG)
Reserved
Reserved
Reserved
Reserved
ns
CWL=7
tCK(AVG)
1.500*
<1.875*
1.500*
<1.875*
ns
Supported CL Settings
5,6,7,8,9
6,7,8,9
nCK
Supported CWL Settings
5,6,7
5,6,7
nCK
*: Optional
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 39
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1066MHz)
Parameter
Symbol
DDR3-1066
Units
Notes
Min.
Max.
Clock Timing
Minimum Clock Cycle Time (DLL off mode)
tCK (DLL_OFF)
8
-
ns
Average Clock Period
tCK(avg)
Refer to "Standard Speed Bins)
ps
Average high pulse width
tCH(avg)
0.47
0.53
tCK(avg)
Average low pulse width
tCL(avg)
0.47
0.53
tCK(avg)
Absolute Clock Period
tCK(abs)
Min.: tCK(avg)min + tJIT(per)min
Max.: tCK(avg)max + tJIT(per)max
ps
Absolute clock HIGH pulse width
tCH(abs)
0.43
-
tCK(avg)
Absolute clock LOW pulse width
tCL(abs)
0.43
-
tCK(avg)
Clock Period Jitter
JIT(per)
-90
90
ps
Clock Period Jitter during DLL locking period
JIT(per, lck)
-80
80
ps
Cycle to Cycle Period Jitter
tJIT(cc)
180
180
ps
Cycle to Cycle Period Jitter during DLL locking period
JIT(cc, lck)
160
160
ps
Duty Cycle Jitter
tJIT(duty)
-
-
ps
Cumulative error across 2 cycles
tERR(2per)
-132
132
ps
Cumulative error across 3 cycles
tERR(3per)
-157
157
ps
Cumulative error across 4 cycles
tERR(4per)
-175
175
ps
Cumulative error across 5 cycles
tERR(5per)
-188
188
ps
Cumulative error across 6 cycles
tERR(6per)
-200
200
ps
Cumulative error across 7 cycles
tERR(7per)
-209
209
ps
Cumulative error across 8 cycles
tERR(8per)
-217
217
ps
Cumulative error across 9 cycles
tERR(9per)
-224
224
ps
Cumulative error across 10 cycles
tERR(10per)
-231
231
ps
Cumulative error across 11 cycles
tERR(11per)
-237
237
ps
Cumulative error across 12 cycles
tERR(12per)
-242
242
ps
Cumulative error across n = 13, 14 . . . 49, 50 cycles
tERR(nper)
tERR(nper)min = (1 + 0.68ln(n)) * tJIT(per)min
tERR(nper)max = (1 + 0.68ln(n)) * tJIT(per)max
ps
Data Timing
DQS, DQS# to DQ skew, per group, per access
tDQSQ
-
150
ps
DQ output hold time from DQS, DQS#
tQH
0.38
-
tCK(avg)
DQ low-impedance time from CK, CK#
tLZ(DQ)
-600
300
ps
DQ high impedance time from CK, CK#
tHZ(DQ)
-
300
ps
Data setup time to DQS, DQS# referenced to Vih(ac) / Vil(ac) levels
tDS(base)
AC175
25
ps
Data setup time to DQS, DQS# referenced to Vih(ac) / Vil(ac) levels
tDS(base)
AC150
75
ps
Data hold time from DQS, DQS# referenced to Vih(dc) / Vil(dc) levels
tDH(base)
DC100
100
ps
DQ and DM Input pulse width for each input
tDIPW
490
ps
Data Strobe Timing
DQS,DQS# differential READ Preamble
tRPRE
0.9
Note 19
tCK(avg)
DQS, DQS# differential READ Postamble
tRPST
0.3
Note 11
tCK(avg)
DQS, DQS# differential output high time
tQSH
0.38
-
tCK(avg)
DQS, DQS# differential output low time
tQSL
0.38
-
tCK(avg)
DQS, DQS# differential WRITE Preamble
tWPRE
0.9
-
tCK(avg)
DQS, DQS# differential WRITE Postamble
tWPST
0.3
-
tCK(avg)
DQS, DQS# rising edge output access time from rising CK, CK#
tDQSCK
-300
300
tCK(avg)
DQS and DQS# low-impedance time
(Referenced from RL - 1)
tLZ(DQS)
-600
300
tCK(avg)
DQS and DQS# high-impedance time
(Referenced from RL + BL/2)
tHZ(DQS)
-
300
tCK(avg)
DQS, DQS# differential input low pulse width
tDQSL
0.45
0.55
tCK(avg)
DQS, DQS# differential input high pulse width
tDQSH
0.45
0.55
tCK(avg)
DQS, DQS# rising edge to CK, CK# rising edge
tDQSS
-0.25
0.25
tCK(avg)
DQS, DQS# falling edge setup time to CK, CK# rising edge
tDSS
0.2
-
tCK(avg)
DQS, DQS# falling edge hold time from CK, CK# rising edge
tDSH
0.2
-
tCK(avg)
Command and Address Timing
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 40
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
DLL locking time
tDLLK
512
-
nCK
Internal READ Command to PRECHARGE Command delay
tRTP
tRTPmin.: max(4nCK, 7.5ns)
tRTPmax.: -
Delay from start of internal write
transaction to internal read command
tWTR
tWTRmin.: max(4nCK, 7.5ns)
tWTRmax.:
WRITE recovery time
tWR
15
-
ns
Mode Register Set command cycle time
tMRD
4
-
nCK
Mode Register Set command update delay
tMOD
tMODmin.: max(12nCK, 15ns)
tMODmax.:
ACT to internal read or write delay time
tRCD
PRE command period
tRP
ACT to ACT or REF command period
tRC
CAS# to CAS# command delay
tCCD
4
-
nCK
Auto precharge write recovery + precharge time
tDAL(min)
WR + roundup(tRP / tCK(avg))
nCK
Multi-Purpose Register Recovery Time
tMPRR
1
-
nCK
ACTIVE to PRECHARGE command period
tRAS
Standard Speed Bins
ACTIVE to ACTIVE command period for 1KB page size
tRRD
max(4nCK, 7.5ns)
-
ACTIVE to ACTIVE command period for 2KB page size
tRRD
tRRDmin.: max(4nCK, 10ns)
tRRDmax.:
Four activate window for 1KB page size
tFAW
37.5
-
ns
Four activate window for 2KB page size
tFAW
50
-
ns
Command and Address setup time to CK, CK#
referenced to Vih(ac) / Vil(ac) levels
tIS(base)
125
-
ps
Command and Address hold time from CK, CK#
referenced to Vih(dc) / Vil(dc) levels
tIH(base)
200
-
ps
Command and Address setup time to CK, CK#
referenced to Vih(ac) / Vil(ac) levels
tIS(base) AC150
125+150
-
ps
Control and Address Input pulse width for each input
tIPW
780
-
ps
Calibration Timing
Power-up and RESET calibration time
tZQinit
512
-
nCK
Normal operation Full calibration time
tZQoper
256
-
nCK
Normal operation Short calibration time
tZQCS
64
-
nCK
Reset Timing
Exit Reset from CKE HIGH to a valid command
tXPR
tXPRmin.: max(5nCK, tRFC(min) + 10ns)
tXPRmax.: -
Self Refresh Timings
Exit Self Refresh to commands not requiring a locked DLL
tXS
tXSmin.: max(5nCK, tRFC(min) + 10ns)
tXSmax.: -
Exit Self Refresh to commands requiring a locked DLL
tXSDLL
tXSDLLmin.: tDLLK(min)
tXSDLLmax.: -
nCK
Minimum CKE low width for Self Refresh entry to exit timing
tCKESR
tCKESRmin.: tCKE(min) + 1 nCK
tCKESRmax.: -
Valid Clock Requirement after Self Refresh Entry (SRE)
or Power-Down Entry (PDE)
tCKSRE
tCKSREmin.: max(5 nCK, 10 ns)
tCKSREmax.: -
Valid Clock Requirement before Self Refresh Exit (SRX)
or Power-Down Exit (PDX) or Reset Exit
tCKSRX
tCKSRXmin.: max(5 nCK, 10 ns)
tCKSRXmax.: -
Power Down Timings
Exit Power Down with DLL on to any valid command;
Exit Precharge Power Down with DLL frozen to commands
not requiring a locked DLL
tXP
tXPmin.: max(3nCK, 7.5ns)
tXPmax.: -
Exit Precharge Power Down with DLL frozen to commands
requiring a locked DLL
tXPDLL
tXPDLLmin.: max(10nCK, 24ns)
tXPDLLmax.: -
CKE minimum pulse width
tCKE
tCKEmin.: max(3nCK 5.625ns)
tCKEmax.: -
Command pass disable delay
tCPDED
tCPDEDmin.: 1
tCPDEDmin.: -
nCK
Power Down Entry to Exit Timing
tPD
tPDmin.: tCKE(min)
tPDmax.: 9*tREFI
Timing of ACT command to Power Down entry
tACTPDEN
tACTPDENmin.: 1
tACTPDENmax.: -
nCK
Timing of PRE or PREA command to Power Down entry
tPRPDEN
tPRPDENmin.: 1
tPRPDENmax.: -
nCK
Timing of RD/RDA command to Power Down entry
tRDPDEN
tRDPDENmin.: RL+4+1
nCK
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 41
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
tRDPDENmax.: -
Timing of WR command to Power Down entry
(BL8OTF, BL8MRS, BC4OTF)
tWRPDEN
tWRPDENmin.: WL + 4 + (tWR / tCK(avg))
tWRPDENmax.: -
nCK
Timing of WRA command to Power Down entry
(BL8OTF, BL8MRS, BC4OTF)
tWRAPDEN
tWRAPDENmin.: WL+4+WR+1
tWRAPDENmax.: -
nCK
Timing of WR command to Power Down entry (BC4MRS)
tWRPDEN
tWRPDENmin.: WL + 2 + (tWR / tCK(avg))tWRPDENmax.: -
nCK
Timing of WRA command to Power Down entry
(BC4MRS)
tWRAPDEN
tWRAPDENmin.: WL + 2 +WR + 1
tWRAPDENmax.: -
nCK
Timing of REF command to Power Down entry
tREFPDEN
tREFPDENmin.: 1
tREFPDENmax.: -
nCK
Timing of MRS command to Power Down entry
tMRSPDEN
tMRSPDENmin.: tMOD(min)
tMRSPDENmax.: -
ODT Timings
ODT high time without write command or
with write command and BC4
ODTH4
ODTH4min.: 4
ODTH4max.: -
nCK
ODT high time with Write command and BL8
ODTH8
ODTH8min.: 6
ODTH8max.: -
nCK
Asynchronous RTT turn-on delay
(Power-Down with DLL frozen)
tAONPD
2
8.5
ns
Asynchronous RTT turn-off delay
(Power-Down with DLL frozen)
tAOFPD
2
8.5
ns
RTT turn-on
tAON
-300
300
ps
RTT_Nom and RTT_WR turn-off time
from ODTLoff reference
tAOF
0.3
0.7
tCK(avg)
RTT dynamic change skew
tADC
0.3
0.7
tCK(avg)
Write Leveling Timings
First DQS/DQS# rising edge after
write leveling mode is programmed
tWLMRD
40
-
nCK
DQS/DQS# delay after write leveling mode is programmed
tWLDQSEN
25
-
nCK
Write leveling setup time from rising CK, CK#
crossing to rising DQS, DQS# crossing
tWLS
245
-
ps
Write leveling hold time from rising DQS, DQS#
crossing to rising CK, CK# crossing
tWLH
245
-
ps
Write leveling output delay
tWLO
0
9
ns
Write leveling output error
tWLOE
0
2
ns
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 42
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1333MHz)
Parameter
Symbol
DDR3-1333
Units
Notes
Min.
Max.
Clock Timing
Minimum Clock Cycle Time (DLL off mode)
tCK (DLL_OFF)
8
-
ns
Average Clock Period
tCK(avg)
Refer to "Standard Speed Bins)
ps
Average high pulse width
tCH(avg)
0.47
0.53
tCK(avg)
Average low pulse width
tCL(avg)
0.47
0.53
tCK(avg)
Absolute Clock Period
tCK(abs)
Min.: tCK(avg)min + tJIT(per)min
Max.: tCK(avg)max + tJIT(per)max
ps
Absolute clock HIGH pulse width
tCH(abs)
0.43
-
tCK(avg)
Absolute clock LOW pulse width
tCL(abs)
0.43
-
tCK(avg)
Clock Period Jitter
JIT(per)
-80
80
ps
Clock Period Jitter during DLL locking period
JIT(per, lck)
-70
70
ps
Cycle to Cycle Period Jitter
tJIT(cc)
160
160
ps
Cycle to Cycle Period Jitter during DLL locking period
JIT(cc, lck)
140
140
ps
Duty Cycle Jitter
tJIT(duty)
-
-
ps
Cumulative error across 2 cycles
tERR(2per)
-118
118
ps
Cumulative error across 3 cycles
tERR(3per)
-140
140
ps
Cumulative error across 4 cycles
tERR(4per)
-155
155
ps
Cumulative error across 5 cycles
tERR(5per)
-168
168
ps
Cumulative error across 6 cycles
tERR(6per)
-177
177
ps
Cumulative error across 7 cycles
tERR(7per)
-186
186
ps
Cumulative error across 8 cycles
tERR(8per)
-193
193
ps
Cumulative error across 9 cycles
tERR(9per)
-200
200
ps
Cumulative error across 10 cycles
tERR(10per)
-205
205
ps
Cumulative error across 11 cycles
tERR(11per)
-210
210
ps
Cumulative error across 12 cycles
tERR(12per)
-215
215
ps
Cumulative error across n = 13, 14 . . . 49, 50 cycles
tERR(nper)
tERR(nper)min = (1 + 0.68ln(n)) * tJIT(per)min
tERR(nper)max = (1 + 0.68ln(n)) * tJIT(per)max
ps
Data Timing
DQS, DQS# to DQ skew, per group, per access
tDQSQ
-
125
ps
DQ output hold time from DQS, DQS#
tQH
0.38
-
tCK(avg)
DQ low-impedance time from CK, CK#
tLZ(DQ)
-500
250
ps
DQ high impedance time from CK, CK#
tHZ(DQ)
-
250
ps
Data setup time to DQS, DQS# referenced to Vih(ac) / Vil(ac) levels
tDS(base)
AC175
-
ps
Data setup time to DQS, DQS# referenced to Vih(ac) / Vil(ac) levels
tDS(base)
AC150
30
ps
Data hold time from DQS, DQS# referenced to Vih(dc) / Vil(dc) levels
tDH(base)
DC100
65
ps
DQ and DM Input pulse width for each input
tDIPW
400
-
ps
Data Strobe Timing
DQS,DQS# differential READ Preamble
tRPRE
0.9
Note 19
tCK(avg)
DQS, DQS# differential READ Postamble
tRPST
0.3
Note 11
tCK(avg)
DQS, DQS# differential output high time
tQSH
0.4
-
tCK(avg)
DQS, DQS# differential output low time
tQSL
0.4
-
tCK(avg)
DQS, DQS# differential WRITE Preamble
tWPRE
0.9
-
tCK(avg)
DQS, DQS# differential WRITE Postamble
tWPST
0.3
-
tCK(avg)
DQS, DQS# rising edge output access time from rising CK, CK#
tDQSCK
-255
255
tCK(avg)
DQS and DQS# low-impedance time
(Referenced from RL - 1)
tLZ(DQS)
-500
250
tCK(avg)
DQS and DQS# high-impedance time
(Referenced from RL + BL/2)
tHZ(DQS)
-
250
tCK(avg)
DQS, DQS# differential input low pulse width
tDQSL
0.45
0.55
tCK(avg)
DQS, DQS# differential input high pulse width
tDQSH
0.45
0.55
tCK(avg)
DQS, DQS# rising edge to CK, CK# rising edge
tDQSS
-0.25
0.25
tCK(avg)
DQS, DQS# falling edge setup time to CK, CK# rising edge
tDSS
0.2
-
tCK(avg)
DQS, DQS# falling edge hold time from CK, CK# rising edge
tDSH
0.2
-
tCK(avg)
Command and Address Timing
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 43
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
DLL locking time
tDLLK
512
-
nCK
Internal READ Command to PRECHARGE Command delay
tRTP
tRTPmin.: max(4nCK, 7.5ns)
tRTPmax.: -
Delay from start of internal write
transaction to internal read command
tWTR
tWTRmin.: max(4nCK, 7.5ns)
tWTRmax.:
WRITE recovery time
tWR
15
-
ns
Mode Register Set command cycle time
tMRD
4
-
nCK
Mode Register Set command update delay
tMOD
tMODmin.: max(12nCK, 15ns)
tMODmax.:
ACT to internal read or write delay time
tRCD
PRE command period
tRP
ACT to ACT or REF command period
tRC
CAS# to CAS# command delay
tCCD
4
nCK
Auto precharge write recovery + precharge time
tDAL(min)
WR + roundup(tRP / tCK(avg))
nCK
Multi-Purpose Register Recovery Time
tMPRR
1
-
nCK
ACTIVE to PRECHARGE command period
tRAS
Standard Speed Bins
ACTIVE to ACTIVE command period for 1KB page size
tRRD
tRRDmin.: max(4nCK, 6ns)
tRRDmax.:
ACTIVE to ACTIVE command period for 2KB page size
tRRD
tRRDmin.: max(4nCK, 7.5ns)
tRRDmax.:
Four activate window for 1KB page size
tFAW
30
0
ns
Four activate window for 2KB page size
tFAW
45
0
ns
Command and Address setup time to CK, CK#
referenced to Vih(ac) / Vil(ac) levels
tIS(base)
65
-
ps
Command and Address hold time from CK, CK#
referenced to Vih(dc) / Vil(dc) levels
tIH(base)
140
-
ps
Command and Address setup time to CK, CK#
referenced to Vih(ac) / Vil(ac) levels
tIS(base) AC150
65+125
-
ps
Control and Address Input pulse width for each input
tIPW
620
-
ps
Calibration Timing
Power-up and RESET calibration time
tZQinit
512
-
nCK
Normal operation Full calibration time
tZQoper
256
-
nCK
Normal operation Short calibration time
tZQCS
64
-
nCK
Reset Timing
Exit Reset from CKE HIGH to a valid command
tXPR
tXPRmin.: max(5nCK, tRFC(min) + 10ns)
tXPRmax.: -
Self Refresh Timings
Exit Self Refresh to commands not requiring a locked DLL
tXS
tXSmin.: max(5nCK, tRFC(min) + 10ns)
tXSmax.: -
Exit Self Refresh to commands requiring a locked DLL
tXSDLL
tXSDLLmin.: tDLLK(min)
tXSDLLmax.: -
nCK
Minimum CKE low width for Self Refresh entry to exit timing
tCKESR
tCKESRmin.: tCKE(min) + 1 nCK
tCKESRmax.: -
Valid Clock Requirement after Self Refresh Entry (SRE)
or Power-Down Entry (PDE)
tCKSRE
tCKSREmin.: max(5 nCK, 10 ns)
tCKSREmax.: -
Valid Clock Requirement before Self Refresh Exit (SRX)
or Power-Down Exit (PDX) or Reset Exit
tCKSRX
tCKSRXmin.: max(5 nCK, 10 ns)
tCKSRXmax.: -
Power Down Timings
Exit Power Down with DLL on to any valid command;
Exit Precharge Power Down with DLL frozen to commands
not requiring a locked DLL
tXP
tXPmin.: max(3nCK, 6ns)
tXPmax.: -
Exit Precharge Power Down with DLL frozen to commands
requiring a locked DLL
tXPDLL
tXPDLLmin.: max(10nCK, 24ns)
tXPDLLmax.: -
CKE minimum pulse width
tCKE
tCKEmin.: max(3nCK ,5.625ns)
tCKEmax.: -
Command pass disable delay
tCPDED
tCPDEDmin.: 1
tCPDEDmin.: -
nCK
Power Down Entry to Exit Timing
tPD
tPDmin.: tCKE(min)
tPDmax.: 9*tREFI
Timing of ACT command to Power Down entry
tACTPDEN
tACTPDENmin.: 1
tACTPDENmax.: -
nCK
Timing of PRE or PREA command to Power Down entry
tPRPDEN
tPRPDENmin.: 1
tPRPDENmax.: -
nCK
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 44
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Timing of RD/RDA command to Power Down entry
tRDPDEN
tRDPDENmin.: RL+4+1
tRDPDENmax.: -
nCK
Timing of WR command to Power Down entry
(BL8OTF, BL8MRS, BC4OTF)
tWRPDEN
tWRPDENmin.: WL + 4 + (tWR / tCK(avg))
tWRPDENmax.: -
nCK
Timing of WRA command to Power Down entry
(BL8OTF, BL8MRS, BC4OTF)
tWRAPDEN
tWRAPDENmin.: WL+4+WR+1
tWRAPDENmax.: -
nCK
Timing of WR command to Power Down entry (BC4MRS)
tWRPDEN
tWRPDENmin.: WL + 2 + (tWR / tCK(avg))tWRPDENmax.: -
nCK
Timing of WRA command to Power Down entry
(BC4MRS)
tWRAPDEN
tWRAPDENmin.: WL + 2 +WR + 1
tWRAPDENmax.: -
nCK
Timing of REF command to Power Down entry
tREFPDEN
tREFPDENmin.: 1
tREFPDENmax.: -
nCK
Timing of MRS command to Power Down entry
tMRSPDEN
tMRSPDENmin.: tMOD(min)
tMRSPDENmax.: -
ODT Timings
ODT high time without write command or
with write command and BC4
ODTH4
ODTH4min.: 4
ODTH4max.: -
nCK
ODT high time with Write command and BL8
ODTH8
ODTH8min.: 6
ODTH8max.: -
nCK
Asynchronous RTT turn-on delay
(Power-Down with DLL frozen)
tAONPD
2
8.5
ns
Asynchronous RTT turn-off delay
(Power-Down with DLL frozen)
tAOFPD
2
8.5
ns
RTT turn-on
tAON
-250
250
ps
RTT_Nom and RTT_WR turn-off time
from ODTLoff reference
tAOF
0.3
0.7
tCK(avg)
RTT dynamic change skew
tADC
0.3
0.7
tCK(avg)
Write Leveling Timings
First DQS/DQS# rising edge after
write leveling mode is programmed
tWLMRD
40
-
nCK
DQS/DQS# delay after write leveling mode is programmed
tWLDQSEN
25
-
nCK
Write leveling setup time from rising CK, CK#
crossing to rising DQS, DQS# crossing
tWLS
195
-
ps
Write leveling hold time from rising DQS, DQS#
crossing to rising CK, CK# crossing
tWLH
195
-
ps
Write leveling output delay
tWLO
0
9
ns
Write leveling output error
tWLOE
0
2
ns
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 45
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Package Dimensions
[2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
FRONT
1.50 +/- 0.10
Detail A Detail B
0.80 +/- 0.05
BACK
3.80
4.00
1.00 Pitch
Detail A
9.50
133.35 +/- 0.15
Units: Millimeters
30.00 +0.5/-0.15
SIDE
4.00 Max.
1.27 +0.07/-0.10
17.30
5.175 47.00
Detail B
71.00
5.00
2.50
3.0 (x4)
SPD/TS
Registering
Clock
Driver
Note: Device position and scale are only for reference.
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 46
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Package Dimensions
[4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs]
FRONT
1.50 +/- 0.10
Detail A Detail B
0.80 +/- 0.05
BACK
3.80
4.00
1.00 Pitch
Detail A
9.50
133.35 +/- 0.15
Units: Millimeters
30.00 +0.5/-0.15
SIDE
4.00 Max.
1.27 +0.07/-0.10
17.30
5.175 47.00
Detail B
71.00
5.00
2.50
3.0 (x4)
SPD/TS
Registering
Clock
Driver
Note: Device position and scale are only for reference.
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 47
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Package Dimensions
[4GB – 1 Rank, 512Mx4 DDR3 SDRAMs]
FRONT
1.50 +/- 0.10
Detail A Detail B
0.80 +/- 0.05
BACK
3.80
4.00
1.00 Pitch
Detail A
9.50
133.35 +/- 0.15
Units: Millimeters
30.00 +0.5/-0.15
SIDE
4.00 Max.
1.27 +0.07/-0.10
17.30
5.175 47.00
Detail B
71.00
5.00
2.50
3.0 (x4)
SPD/TS
Registering
Clock
Driver
Note: Device position and scale are only for reference.
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 48
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Package Dimensions
[8GB – 2 Ranks, 512Mx4 DDR3 SDRAMs]
FRONT
1.50 +/- 0.10
Detail A Detail B
0.80 +/- 0.05
REAR
3.80
4.00
1.00 Pitch
133.75 +/- 0.25
Units: Millimeters
30.60 +/- 0.15
SIDE
1.27 +0.07/-0.10
2.50
Max 8.5
3.0 (x4)
47.00 5.00
Detail A Detail B
71.00
9.50
17.30
5.175
Note: Device position and scale are only for reference.
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 49
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Package Dimensions
[16GB – 4 Ranks, 1Gx4 (DDP) DDR3 SDRAMs]
FRONT
1.50 +/- 0.10
Detail A Detail B
0.80 +/- 0.05
REAR
3.80
4.00
1.00 Pitch
133.75 +/- 0.25
Units: Millimeters
30.60 +/- 0.15
SIDE
1.27 +0.07/-0.10
2.50
Max 8.5
3.0 (x4)
47.00 5.00
Detail A Detail B
71.00
9.50
17.30
5.175
Note: Device position and scale are only for reference.
NT2GC72B89B0NJ/NT2GC72C89B0NJ/NT2GC72B89B0NK/NT2GC72C89B0NK/NT4GC72B4PB0NL/NT4GC72C4PB0NL/NT4GC72B8PB0NL
NT4GC72C8PB0NL/NT4GC72B4PB0NJ/NT4GC72C4PB0NJ/NT4GC72B8PB0NJ/NT4GC72C8PB0NJ/NT8GC72B4NB1NJ/NT8GC72C4NB1NJ
NT8GC72B4NB1NK/NT8GC72C4NB1NK/NT16TC72B4NB1NL/NT16TC72C4NB1NL/NT16TC72B4NB1NJ/NT16TC72C4NB1NJ
2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72
PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM
REV 1.1 50
11/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Revision Log
Rev
Date
Modification
0.1
02/2010
Preliminary Release
0.5
05/2010
Preliminary Release 2
1.0
08/2010
Official Release
1.1
11/2010
Added 1.35V Spec. and modify Functional Block Diagram of 1Rx4.
Nanya Technology Corporation
Hwa Ya Technology Park 669
Fu Hsing 3rd Rd., Kueishan,
Taoyuan, 333, Taiwan, R.O.C.
Tel: +886-3-328-1688
Please visit our home page for more information: www.nanya.com
Printed in Taiwan
© 2010
