NRVHP8H200MFDWFT1G - ON SEMICONDUCTOR

October, 2018 − Rev. 1

1Publication Order Number:

NRVHP8H200MFD/D

NRVHP8H200MFD

Switch-Mode

Power Rectifier

This ultrafast rectifier in the dual flag SO−8 flat lead package offers

designers a unique degree of versatility and design freedom. The two

devices are electrically independent and can be used separately, as

common cathode, as common anode or in series as a function of board

level layout. The exposed pad design provides low thermal resistance.

The clip attach design creates a package with very efficient die size to

board area ratio. While thermal performance is nearly the same as the

DPAK package height and board footprint are less than half.

Features

•New Package Provides Capability of Inspection and Probe After

Board Mounting

•Low Forward Voltage Drop

•175°C Operating Junction Temperature

•NRV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These are Pb−Free and Halide−Free Devices

Mechanical Characteristics:

•Case: Epoxy, Molded

•Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.

•Lead Finish: 100% Matte Sn (Tin)

•Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Device Meets MSL 1 Requirements

Applications

•Excellent Alternative to DPAK in Space−Constrained Automotive

Applications

•Output Rectification in Switching Power Supplies

•Freewheeling Diode used with Inductive Loads

Device Package Shipping†

ORDERING INFORMATION

ULTRAFAST RECTIFIER

8 AMPERES (4x2), 200 VOLTS

www.onsemi.com

1,2 7,8

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NRVHP8H200MFDT1G DFN8

(Pb−Free)

1500 /

Tape & Reel

NRVHP8H200MFDT3G DFN8

(Pb−Free)

5000 /

Tape & Reel

3,4 5,6

DFN8 5x6

(SO8FL)

CASE 506BT

MARKING DIAGRAM

8H200M = Specific Device Code

A = Assembly Location

Y = Year

W = Work Week

ZZ = Lot Traceability

8H200M

AYWZZ

NRVHP8H200MFDWFT1G DFN8

(Pb−Free)

1500 /

Tape & Reel

NRVHP8H200MFDWFT3G DFN8

(Pb−Free)

5000 /

Tape & Reel

NRVHP8H200MFD

www.onsemi.com

MAXIMUM RATINGS (per diode unless noted)

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR200

Average Rectified Forward Current

(Rated VR, TC = 170°C)

IF(AV) 4.0 A

Peak Repetitive Forward Current,

(Rated VR, Square Wave, 20 kHz, TC = 169°C)

IFRM 8.0 A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFSM 80 A

Storage Temperature Range Tstg −65 to +175 °C

Operating Junction Temperature TJ−55 to +175 °C

Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) EAS 10 mJ

ESD Rating (Human Body Model) 3B

ESD Rating (Machine Model) M4

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS (per diode unless noted)

Characteristic Symbol Typ Max Unit

Thermal Resistance, Junction−to−Case, Steady State

(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)

RθJC −3.4 °C/W

ELECTRICAL CHARACTERISTICS (per diode unless noted)

Instantaneous Forward Voltage (Note 1)

(iF = 4.0 Amps, TJ = 125°C)

(iF = 4.0 Amps, TJ = 25°C)

(iF = 6.0 Amps, TJ = 125°C)

(iF = 6.0 Amps, TJ = 25°C)

(iF = 8.0 Amps, TJ = 125°C)

(iF = 8.0 Amps, TJ = 25°C)

0.76

0.88

0.80

0.92

0.83

0.94

0.85

1.0

0.88

1.05

0.91

1.1

Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, TJ = 125°C)

(Rated dc Voltage, TJ = 25°C)

1.00

0.012

0.5

Reverse Recovery Time

IF = 4.0 A, VR = 30 V, dl/dt = 200 A/ms, TJ = 25°C

trr 17 30 ns

Reverse Recovery Time

IF = 4.0 A, VR = 30 V, dl/dt = 200 A/ms, TJ = 125°C

trr 27 60 ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.

NRVHP8H200MFD

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. Typical Instantaneous Forward

Characteristics

Figure 2. Maximum Instantaneous Forward

Characteristics

, INSTANTANEOUS FORWARD VOLTAGE (V) VF

, INSTANTANEOUS FORWARD VOLTAGE (V)

1.21.00.80.60.40.2

100

1.20.80.60.2

100

Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics

VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)

180120100806040200

Figure 5. Typical Junction Capacitance

VR, REVERSE VOLTAGE (V)

100

1000

, INSTANTANEOUS FORWARD

CURRENT (A)

IR, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)

1.4

, INSTANTANEOUS FORWARD

CURRENT (A)

140 200

1.E−09

1.E−08

1.E−06

1.E−05

IR, INSTANTANEOUS REVERSE CURRENT (A)

TA = 175°C

TA = 125°C

TA = −55°C

TA = 25°C

TA = 150°C

TA = 125°C

TA = −55°C

TA = 85°C

TA = 150°C

TA = 125°C

TA = 25°C

Figure 6. Current Derating per Device

TC, CASE TEMPERATURE (°C)

10080 120600

IF(AV), AVERAGE FORWARD CURRENT (A)

Square Wave

RqJC = 3.4°C/W

TJ = 25°C

0.4 1.0

TA = 150°C

TA = 175°C

0.1 0.1

TA = 85°C

1.E−07

1.E−04

160

60 120 180

140

TA = 85°C

TA = 25°C

180120100806040200 140 200

TA = 150°C

TA = 125°C

TA = 25°C

TA = 175°C

TA = 85°C

160

160 180

1.10.90.70.50.3 1.30.90.70.3 1.50.5 1.1 1.6

1.E−03

1.E−10 1.E−09

1.E−08

1.E−06

1.E−05

1.E−07

1.E−04

1.E−03

1.E−02

20020 80 14040 100 160

TA = −55°CTA = −55°C

20 40

NRVHP8H200MFD

www.onsemi.com

TYPICAL CHARACTERISTICS

IF(AV), AVERAGE FORWARD CURRENT (A)

PF(AV), AVERAGE FORWARD

POWER DISSIPATION (W)

Square Wave

IPK/IAV = 5

IPK/IAV = 20

IPK/IAV = 10

246

Figure 7. Forward Power Dissipation

135

Figure 8. Typical Thermal Characteristics per Package

PULSE TIME (sec)

0.010.001 100.0001 0.10.00001 10.000001

0.1

100

R(t) (°C/W)

100 100

50% Duty Cycle

Single Pulse

20%

10%

0.01

Assumes 25°C ambient and soldered to

a 600 mm2 − oz copper pad on PCB

Figure 9. Typical Thermal Characteristics per Diode

PULSE TIME (sec)

0.010.001 100.0001 0.10.00001 10.000001

0.1

100

R(t) (°C/W)

100 100

50% Duty Cycle

Single Pulse

20%

10%

0.01

Assumes 25°C ambient and soldered to

a 600 mm2 − oz copper pad on PCB

NRVHP8H200MFD

www.onsemi.com

PACKAGE DIMENSIONS

DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual)

CASE 506BT

ISSUE E

M3.25

h−−−

3.50

−−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED

BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP.

4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL

AS THE TERMINALS.

5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED

AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST

POINT ON THE PACKAGE BODY.

7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA.

1234

TOP VIEW

SIDE VIEW

BOTTOM VIEW

0.20 C

DIM MIN

MILLIMETERS

A0.90

A1 −−−

b0.33

c0.20

D5.15 BSC

D1 4.70

D2 3.90

E6.15 BSC

E1 5.70

E2 3.90

e1.27 BSC

G0.45

K0.51

L0.48

0.10 C

b1 E2

A0.10 B

0.05 C

DETAIL A

MAX

−−−

0.42

−−−

4.90

4.10

5.90

4.15

0.55

−−−

0.61

N1.80 2.00

PIN ONE

IDENTIFIER

NOTE 7

NOTE 4 CSEATING

PLANE

DETAIL A NOTE 6

NOTE 3

D3 1.50 1.70

b1 0.33 0.42

ÉÉ

DETAIL B

ALTERNATE

CONSTRUCTION

K1 0.56 −−−

3.75

MAX

1.10

0.05

0.51

0.33

5.10

4.30

6.10

4.40

0.65

−−−

0.71

2.20

1.90

0.51

−−−

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

1.27

0.75

1.40

3.70

4.56

PITCH

6.59

4.84

1.00

DIMENSION: MILLIMETERS

2.30

0.70

5.55

0.56

2.08

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NRVHP8H200MFD/D

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