SMAJ5.0A thru SMAJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors FEATURES * * * * * * * * * SMA (DO-214AC) * * PRIMARY CHARACTERISTICS Low profile package Ideal for automated placement Glass passivated chip junction Available in uni-directional and bi-directional 400 W peak pulse power capability with a Available 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % (300 W above 78 V) Excellent clamping capability Very fast response time Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VBR uni-directional 6.40 V to 231 V VBR bi-directional 6.40 V to 231 V TYPICAL APPLICATIONS VWM 5.0 V to 188 V PPPM 400 W, 300 W Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. IFSM 40 A TJ max. 150 C Polarity Uni-directional, bi-directional Package SMA (DO-214AC) DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional use CA suffix (e.g. SMAJ10CA). Electrical characteristics apply in both directions. MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 s waveform (1)(2) (fig. 1) PPPM 400 W Peak pulse current with a waveform (1) IPPM See next table A Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) IFSM 40 A TJ, TSTG -55 to +150 C Operating junction and storage temperature range Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2. Rating is 300 W above 78 V A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 14-Jul-17 Document Number: 88390 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMAJ5.0A thru SMAJ188CA www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE TYPE SMAJ5.0A (5) SMAJ6.0A SMAJ6.5A SMAJ7.0A SMAJ7.5A SMAJ8.0A SMAJ8.5A SMAJ9.0A SMAJ10A SMAJ11A SMAJ12A SMAJ13A SMAJ14A SMAJ15A SMAJ16A SMAJ17A SMAJ18A SMAJ20A SMAJ22A SMAJ24A SMAJ26A SMAJ28A SMAJ30A SMAJ33A SMAJ36A SMAJ40A SMAJ43A SMAJ45A SMAJ48A SMAJ51A SMAJ54A SMAJ58A SMAJ60A SMAJ64A SMAJ70A SMAJ75A SMAJ78A SMAJ85A SMAJ90A SMAJ100A SMAJ110A SMAJ120A SMAJ130A SMAJ150A SMAJ160A SMAJ170A SMAJ188A DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) UNI BI MIN. MAX. AE AG AK AM AP AR AT AV AX AZ BE BG BK BM BP BR BT BV BX BZ CE CG CK CM CP CR CT CV CX CZ RE RG RK RM RP RR RT RV RX RZ SE VG VK VM SP SR SS WE WG WK WM WP WR WT WV WX WZ XE XG XK XM XP XR XT XV XX XZ YE YG YK YM YP YR YT YV YX YZ ZE ZG ZK ZM ZP ZR ZT ZV ZX ZZ VE VG VK VM VP VR VS 6.40 6.67 7.22 7.78 8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7 60.0 64.4 66.7 71.1 77.8 83.3 86.7 94.4 100 111 122 133 144 167 178 189 209 7.07 7.37 7.98 8.60 9.21 9.83 10.4 11.1 12.3 13.5 14.7 15.9 17.2 18.5 19.7 20.9 22.1 24.5 26.9 29.5 31.9 34.4 36.8 40.6 44.2 49.1 52.8 55.3 58.9 62.7 66.3 71.2 73.7 78.6 86.0 92.1 95.8 104 111 123 135 147 159 185 197 209 231 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (A) (3) 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170 188 800 800 500 200 100 50 10 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM MAXIMUM PEAK PULSE CLAMPING SURGE VOLTAGE AT CURRENT IPPM IPPM (A) (2) VC (V) 43.5 38.8 35.7 33.3 31.0 29.4 27.8 26.0 23.5 22.0 20.1 18.6 17.2 16.4 15.4 14.5 13.7 12.3 11.3 10.3 9.5 8.8 8.3 7.5 6.9 6.2 5.8 5.5 5.2 4.9 4.6 4.3 4.1 3.9 3.5 3.3 3.2 2.2 2.1 1.9 1.7 1.6 1.4 1.2 1.2 1.09 0.91 9.2 10.3 11.2 12.0 12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103 113 121 126 137 146 162 177 193 209 243 259 275 328 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types having V WM of 10 V and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bi-directional SMAJ5.0CA, the maximum V BR is 7.25 V (6) V = 3.5 V at I = 25 A (uni-directional only) F F Revision: 14-Jul-17 Document Number: 88390 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMAJ5.0A thru SMAJ188CA www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient (1) Typical thermal resistance, junction to lead SYMBOL RJA RJL VALUE 120 30 UNIT C/W C/W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N SMAJ5.0A-E3/61 SMAJ5.0A-E3/5A SMAJ5.0AHE3/61(1) SMAJ5.0AHE3/5A (1) SMAJ5.0A-M3/61 SMAJ5.0A-M3/5A SMAJ5.0AHM3/H (1) SMAJ5.0AHM3/I (1) UNIT WEIGHT (g) 0.064 0.064 0.064 0.064 0.064 0.064 0.064 0.064 PREFERRED PACKAGE CODE 61 5A 61 5A 61 5A H I BASE QUANTITY 1800 7500 1800 7500 1800 7500 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 150 Non-Repetitive Pulse Waveform Shown in Fig. 3 TA = 25 C 10 1 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0.1 0.1 tr = 10 s TJ = 25 C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 s Waveform as Defined by R.E.A. td 0 1 10 100 1000 10 000 0 1.0 2.0 3.0 td - Pulse Width (s) t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 100 4.0 10 000 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % SMAJ5.0 thru SMAJ78 SMAJ85 thru SMAJ188 IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 75 50 25 0 Measured at Stand-off Voltage VWM TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 1000 Uni-Directional 100 Bi-Directional 10 0 25 50 75 100 125 150 175 200 1 10 100 TJ - Initial Temperature (C) VWM - Reverse Stand-Off Voltage (V) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 4 - Typical Junction Capacitance 200 Revision: 14-Jul-17 Document Number: 88390 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMAJ5.0A thru SMAJ188CA www.vishay.com Vishay General Semiconductor 200 Peak Forward Surge Current (A) Transient Thermal Impedance (C/W) 1000 100 10 1 0.001 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 100 50 10 0.01 0.1 1.0 10 100 1000 1 10 100 tp - Pulse Duration (s) Number of Cycles at 60 Hz Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Only PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 14-Jul-17 Document Number: 88390 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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