SPECIFICATION DEVICE NAME Power MOSFET TYPE NAME 2SK2100-01MR SPEC. No. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME . ~~. Approve Fuji Electric Co lid DRAWN CHECKED DWGNO. I Y 0257-R-004a1. Scope This specifies Fuji power MOSFET 2SK2100-01MR 2. Construction N-channel enhancement mode power MOSFET 3. Application for switching 4. Outview TO-220F Qutview See to 5/11 page 9. Absolute maximum ratings at Tc=25C (unless otherwise specified) Description Symbol | Characteristics | Unit Remarks Drain-source voltage Vos 800 Vv Drain-gate voltage Vocr 800 V Res=20KQ Continuous Drain current 1 + 4 A Pulsed drain current | ppurne + i6 A Gate-source vol tage Vos + 30 V Maximum power dissipation | Po 40 Ww Operating and storage Ten 150 C temperature range Tote -55 ~ +150 C 6. Electrical characteristics at Tc=25C (unless otherwise specified) Static ratings Characteristics Description Symbo | Conditions Unit Min. Typ. Max. Drain-source lo =1mA breakdown voltage | BVoss | Ves=0V 800 V Gate threshold lo =1mA vol tage Ves(th) Vos=Veas 2.5 3.0 3.5 V Zero gate voltage | [oss Vos=800V} Tent 25C 10 500 uA drain current Vas= OV | oss T en=125C 0.2 1.0 mA Gate-source Voes=30V leakage current less Vos= OV 10 100 nA Drain-source on- lo =2A state resistance Roston) | Ves=10 V 2.5 3.3 Q 2 OWG.NO, Fuji Electric Co Lid. [I Y 0257-R-003aDynamic ratings Characteristics Description Symbo | Conditions Unit Min. Typ. Max. Forward lon = 2A transconductance gis Vos=25 V 2.0 4.4 Input capacitance | Ciss 1000 1500 pF Vos=25V Output capacitance | Coss Vos= OV 90 135 pF f =jMHz Reverse transfer capacitance Crss 25 40 pF t d(on) 20 30 ns Turn-on time Vec=600V tr Ves= 10V 10 15 ns lo = 3A td(off) | Res= 100 60 90 ns Turn-off time tf 15 25 ns Reverse diode Characteristics Description Symbo| Conditions Unit Min. TYP. Max. Avalanche L=100 4H, Ten=25C capability lay + See Figl and 2 4 A Diode forward le =2% lor on-vol tage Vso Voes=O0V, Ten=25C 1.0 3.5 V Reverse recovery le =Ioe time ter Vos=O0V ns -dle/dt=100A/us Reverse recovery Ten =25C charge Q,- uc . Thermal resistance Characteristics Description Symbo | Condit tons Unit Min. Typ. Max. Rthen-c 3.125 | C/W Thermal resistance R then-a 62.5 | C/W Fuji Electric Co,Ltd. OWG.NO. | 0257- R-003aFig.l Test circuit SF. L bs | ut | Zn Vez 02 Vec=1/10 + Vos L= 100u4H | pulse JS) Py Fig.2 Operating waveforms 0 re re Ves Vos lo DWG.NO, hi Fuji Electric Co,Lid. Y 0257-R-003aFUJI POWER MOS FET TYPE = 2SK2100-O1MR 100.5 3 4,540.2 oe __|.2.7402 y, \ ana ) ro mM = Trade- 4 ash 0 L Mark @y LY Oo may \ fom LJ Type ail & Name \e BS SW Ol = PK 210.0 Neotel eu Lot No. yt | A 7A 1240.2 A TOO be 1240.2 a I } E P| nO Pre-Solder ~ | 1 0.70.2 0.6 6? 2.5440.2 | | 2.54402 | |.2.7202 an O @ @ CONNECTION m 1 a a GATE (@) DRAIN Note 1, Guaranteed mark of avalanche ruggedness. @) SOURCE DIMENSIONS ARE IN MILLIMETERS. Fuji Electric Co,Ltd. OWG.KO. Jn Y 0257-R-003aPower Dissipation PD=f (TC) 68 TT F 7 T 7 a | qT ] T T 7 T T TT TT ] i F T 7 T q T ? J 49. vec e eee e ees Lecce eee ees _ r ' ' a s | | Q L. . 4 TP ee eee ee ec eee teens a L i Q rT 4. i t I L i 4. L i L 4 L L L 1}. L 4. 4. i i 4 I to} L 4 I I J 8 58 168 156 TT) Safe operating area ID=f (DS) :D=0.01,Tc=25C 19? t T ToT VT Ty I ' TRrrery T T TUTTI T F Torry F ; 1 - oe - 0. Sus 4 19th... SITTIN ee. Ble cec cease 7 F none ee geese ww *s NY ' . 4 r DC -------------5 . A *s : . in rT vos \ ~s Hb Qus 7 - Ss iABdus , 10%. eee ee Ns a : ween eae 4 r sles J GF I: 1 a r 11 8ms 1 WL eee eee eee eteee ey Bins... a bee al 1g72 Loi at pial bol a a it po ta a 13 18? VES (V) 19? 1@ 10 * Fuji Electric Co Ltd. OWG.NO. & 7101 Y 0257-R-003aIDA DK Typical output characteristics [D=f(VDS):80u4s pulse test, Tch=25C B Trr?t?titdereetye ] TY YOR Peed J TrTrT?T Trt 1 TTT ts Ft gy bs- 5 WOS=2BV ibe fn LE cee ee ee ee ee et ee ee ee eee ee ee ee me re eR ee rryprerrrrrryy FrTrtyTt dtr t i Leet beter la ter psp 0 18 28 30 VBS (Vv) Typical Transfer Characteristics 0 Lepper pr tLe hl 40 ID=(VGS):804s pulse test, VDS=25V,Tch=25C 8 THT TTT TTT YT TTT Ty TP TESS T r 7 = L 4 Bc ee ee epee eet ee ene 4 BL cr ee te fe te ee ete eee - = 4 DE fe ee en ate ees = be 4 bk | 1. * . . 4 GQ Coperrteta tees pepe tate te 6 8 oe ~m 16 Fuji Electric Co.Ltd. DWG.NO. 1 Y 0257-R-003aTypical Transconductance gfs=f(ID):80us pulse test, VDS=25Y,Tch=25C BT TT TT TT TT TTT Gee cree eee be tenn e teen tenes a r i" Fs a 4 _ E J a - 1 wn a a 2 ' nn * a a piiri I rTrvTridve @ Pepe eee tite et 8 2 4 6 DA om LieLws Typical Drain-source on-state resistance RDS (on)=f(1D):804s pulse test, Tch=25C 19 TOTO TET IT TT TTT IIT TT epee err yt 5 4 Bc ee ee be ee te eee 4 6 . eee de ee ret eee es ne pee eet tenes 4 a C q < C q Bee te ee eee ee nee 4 3 [ J ra C 7 - q DE ee te eee Lette elt eens 4 TTTFYTEFT TS : : : : 4 8 Letts ata rd sat tt ta 2 4 6 8 10 DA oS Fuji Electric Co Lid. af OWG.NO. Y 0257-R-003a_t RUG Cond (C3) VOS (th) [I Drain-source on-state resistance RDS (on)=f (Teh) : 1D=2A, VGS=104 18 TIT TTT TTT TT TT eT TT er rT = 4 = a BL. ec ee ee bee eee tes 4 E =max. Beceem shyp. TTT Tp ee he RR eR a ee TTTTTIITy OAT riyt Leet ta tl Robt fp Lipotatiet ease panis tepaii 108 i ou oe Q 50 Toh (C) Gate threshold voltage VGS (th) =f (Tch) : VDS=VGS, ID=1mA 150 2 TTITtTtgTg s ~~ ee yee wee . we - _ ~ ~ 7. ~ | LL a --a. 4 me 4 Sm 4 ve eee cee eee ee ee eT ay a. wax. Lpetid typ. De ec te ee ee eee Teas lenin, rr 4 C a Le 4 a ee ee cpt pp tt 38 108 Teh tC) ~30 a 150) Fuji Electric Co,Ltd OWG.HO, 7 Y 0257-R-003a808 T T TOT TOT may GOOEY eee ee, aw F 458V 7 = a .ave 4 B sav J BOE NL MOK ee 4 c 1 MWOkgave Vel AM Acdece cece ter ecee 4 Overy etl. ae lg Q i@ 20 30 4 38 Qg tro) Typical capacitances C=f (VDS) : VGS=OV, f=1MHz 10 oi. fiss 10F ne (655 qc Ff 1 a r Crss | 10 'E a 7 4B ee Qa 1B 29 3 40 VES ) Typical gate charge characteristics VGS=f (Qg): ID=4A 29 45 16 \OS {V} Fuji Electric Co.Ltd. DWG.KO. 10 [| Y 0257-R-003aFarward characteristic of revese diode IF=f (VSD}:80us pulse test 10" t v qT qT a qT rt )T T T T ee | TT T T TT "4 QL eee cece eee . tee efcccees : rrr 4 g | ; : | ap tL Ledeen eae ve 4 4972 Fe ee Lot bk bd 0.6 0.5 1.8 15 VSD (v) Transient thermal impedance Zthch-c=f{(t) parameter:D=t/T L 18 Ll CRON TT WUE T tT TTT TT Trinny tT UE Torr rTriit Ztheh-c KAD gl. _ 7 4a~ 107! 40? 10 ~ 4973 1 40} tS) li/ Fuji Electric Co.Lid. g I Y 0257-R-003a