2SK1628 - Renesas Technology / Hitachi Semiconductor

Regarding the change of names mentioned in the document, such as Hitachi

Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand

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corporate statement, no changes whatsoever have been made to the contents of the document, and

these changes do not constitute any alteration to the contents of the document itself.

Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

To all our customers

Cautions

Keep safety first in your circuit designs!

1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better

and more reliable, but th ere is always the possibility that trouble may occur with them. Trouble with

semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate

measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or

(iii) prevention against any malfunction or mishap.

Notes regar ding these materials

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2SK1628, 2SK1629

Silicon N-Channel MOS FET

ADE-208-1303 (Z)

1st. Edition

Mar. 2001

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

TO-3PL

1. Gate

2. Drain

3. Source

123

2SK1628, 2SK1629

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1628 VDSS 450 V

2SK1629 500

Gate to source voltage VGSS ±30 V

Drain current ID30 A

Drain peak current ID(pulse)*1120 A

Body to drain diode reverse drain current IDR 30 A

Channel dissipation Pch*2200 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Note 1. PW 10 µs, duty cycle 1%

2. Value at TC = 25°C

2SK1628, 2SK1629

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SK1628 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0

breakdown voltage 2SK1629 500

Gate to source breakdown

voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0

Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0

Zero gate voltage 2SK1628 IDSS — — 250 µA VDS = 360 V, VGS = 0

drain current 2SK1629 VDS = 400 V, VGS = 0

Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V

Static Drain to source 2SK1628 RDS(on) — 0.20 0.25 ID = 15 A, VGS = 10 V *1

on state resistance 2SK1629 — 0.22 0.27

Forward transfer admittance |yfs| 12 20 — S ID = 15 A, VDS = 10 V *1

Input capacitance Ciss — 2800 — pF VDS = 10 V, VGS = 0,

Output capacitance Coss — 780 — pF f = 1 MHz

Reverse transfer capacitance Crss — 90 — pF

Turn-on delay time td(on) — 32 — ns ID = 15 A, VGS = 10 V,

Rise time tr— 140 — ns RL = 2

Turn-off delay time td(off) — 200 — ns

Fall time tf— 100 — ns

Body to drain diode forward

voltage VDF — 1.1 — V IF = 30 A, VGS = 0

Body to drain diode reverse

recovery time trr — 600 — ns IF = 30 A, VGS = 0,

diF/dt = 100 A/µs

Note 1. Pulse test

See characteristics curves of 2SK1169, 2SK1170

2SK1628, 2SK1629

300

200

100

0 50 100 150

Case Temperature TC (°C)

Power vs. Temperature Derating

Channel Dissipation Pch (W)

500

100

0.5 10 100 1,000

Drain to Source Voltage VDS (V)

Drain Current ID (A)

Maximum Safe Operation Area

200

1 3 30 300

Ta = 25°C

10 µs

100 µs

DC Operation (T

= 25°C)

Operation in this area

is limited by R

DS (on)

1 ms

PW = 10 ms (1 Shot)

2SK1628

2SK1629

Pulse Width PW (s)

Normalized Transient Thermal Impedance γS (t)

0.1

0.3

D = 1

10 µ

0.03

0.01 100 µ10 m 100 m 1 101 m

TC = 25°C

0.5

0.2

0.1

0.02

0.01

1 Shot Pulse

Normalized Transient Thermal Impedance vs. Pulse Width

TPW

PDM

D = T

θch–c (t) = γS (t) · θch–c

θch–c = 0.625°C/W, TC = 25°C

°C/W

0.05

2SK1628, 2SK1629

Package Dimensions

20.0 ± 0.3 φ3.3 ± 0.2

1.4

2.2

3.0

1.2

5.45 ± 0.5

1.0

3.8

7.4

2.8 ± 0.2

0.6

5.0 ± 0.2

6.0 ± 0.2

26.0 ± 0.3

20.0 ± 0.6

2.5 ± 0.3

+0.25

–0.1

+0.25

–0.1

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

TO-3PL

—

9.9 g

As of January, 2001

Unit: mm

2SK1628, 2SK1629

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

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Japan : http://www.hitachi.co.jp/Sicd/indx.htm

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(Taipei Branch Office)

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Taipei (105), Taiwan

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Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

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Germany

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Fax: <49> (89) 9 29 30 00

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San Jose,CA 95134

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For further information write to:

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